IXFM35N30 Equivalent & Substitute Parts

Part Overview

The IXFM35N30 is an N-Channel MOSFET rated for 300V drain-to-source voltage with 35A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-204AE through-hole package and is part of the HiPerFET™ series. The component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating potential package variations.

Substiute Parts

IXFM35N30

IXYSIn Stock: 2307IXFM35N30 Datasheet

Current PartRFQ

FDA38N30

onsemiIn Stock: 16576FDA38N30 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFM35N30 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 300V minimum
• Continuous Drain Current (Id): 35A or greater at 25°C
• Technology: N-Channel MOSFET (Metal Oxide)
• Operating Temperature Range: -55°C to 150°C or wider
• Mounting Type: Through Hole
• RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

• On-state resistance (Rds On) at rated conditions
• Power dissipation capability
• Gate charge and input capacitance characteristics
• Package footprint compatibility

The FDA38N30 qualifies as a substitute based on matching or exceeding all critical parameters. While the package designation differs (TO-3PN versus TO-204AE), both are through-hole configurations suitable for equivalent circuit board mounting applications.

Parameter Comparison

Engineering Selection Recommendations

IXFM35N30 (Primary Part - Obsolete)

The IXFM35N30 is classified as obsolete. While 2200 units remain in stock, this part number is no longer in active production. Use of this component is limited to maintenance and repair of existing equipment or legacy system support where design continuity is required.

FDA38N30 (Active Substitute)

The FDA38N30 is an active product manufactured by onsemi and represents the recommended substitute for new designs and ongoing procurement. This device exceeds the electrical specifications of the IXFM35N30 across all critical parameters:

• Continuous drain current is rated 38A versus 35A, providing 8.6% additional current capacity
• On-state resistance is reduced to 85 mOhm versus 100 mOhm, improving efficiency
• Power dissipation capability is 312W versus 300W
• Gate charge is significantly lower at 60 nC versus 200 nC, enabling faster switching
• Input capacitance is reduced to 2600 pF versus 4800 pF

Both devices maintain identical voltage ratings (300V Vdss), identical operating temperature ranges (-55°C to 150°C), and equivalent RoHS3 compliance status. The FDA38N30 operates with a higher maximum gate voltage (±30V versus ±20V), providing additional design margin.

Package differences exist between TO-204AE and TO-3PN configurations. PCB layout modifications may be required to accommodate the different through-hole footprint. Thermal management characteristics should be evaluated based on specific application requirements and heatsink design.

Frequently Asked Questions (FAQ)

Q: Can the FDA38N30 directly replace the IXFM35N30 without circuit modifications?

A: Electrical substitution is valid. The FDA38N30 meets or exceeds all critical electrical parameters. However, the package footprint differs (TO-3PN versus TO-204AE), requiring PCB layout changes. Gate drive circuitry may operate with improved performance due to lower gate charge, but existing drive circuits designed for the IXFM35N30 will function with the FDA38N30.

Q: What is the significance of the lower gate charge in the FDA38N30?

A: Gate charge of 60 nC in the FDA38N30 versus 200 nC in the IXFM35N30 indicates faster switching response. This reduces switching losses and enables higher frequency operation. Existing gate drive circuits will charge and discharge the gate faster, potentially improving overall circuit efficiency.

Q: Are there thermal management differences between these devices?

A: Both devices are rated for identical maximum power dissipation at case temperature (300W and 312W respectively). Thermal performance depends on heatsink design, mounting configuration, and ambient conditions. The TO-3PN package of the FDA38N30 may have different thermal resistance characteristics than the TO-204AE package of the IXFM35N30. Thermal analysis specific to your application is required.

Q: Why is the IXFM35N30 obsolete?

A: The IXFM35N30 is classified as obsolete by IXYS, indicating the manufacturer has discontinued production. Existing inventory remains available, but no new manufacturing is planned. The FDA38N30 represents the active alternative in the market.

Q: Can I use the FDA38N30 in applications originally designed for the IXFM35N30?

A: Yes, for applications where the 300V/35A electrical specification is the design requirement. The FDA38N30 provides equivalent or superior electrical performance. PCB layout must be modified to accommodate the TO-3PN package. Verify that the specific application does not depend on unique characteristics of the TO-204AE package or IXYS HiPerFET™ series technology.

Q: What compliance certifications apply to both devices?

A: Both the IXFM35N30 and FDA38N30 are ROHS3 Compliant and REACH Unaffected. Both carry EAR99 export classification and HTSUS code 8541.29.0095. Moisture sensitivity level (MSL) is 1 (Unlimited) for the IXFM35N30 and Not Applicable for the FDA38N30.