IXFM15N60 Equivalent & Substitute Parts

Part Overview

The IXFM15N60 is an N-Channel MOSFET rated for 600V drain-to-source voltage with 15A continuous drain current at 25°C. Manufactured by IXYS under the HiPerFET™ series, this device is housed in a TO-204AE through-hole package and is designed for high-voltage switching applications requiring 300W maximum power dissipation.

The IXFM15N60 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	15	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	500 mOhm @ 7.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 4mA
Gate Charge (Qg Max) @ Vgs	170	nC @ 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-204AE	Through Hole
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IXFM15N60 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 600V
Continuous Drain Current (Id) must equal or exceed 15A at 25°C
On-State Resistance (Rds On) must not exceed the original specification to maintain switching efficiency
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuits
Operating Temperature Range must encompass -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

Package type must be through-hole compatible
Pin configuration must support direct board-level substitution

The SIHG15N60E-GE3 from Vishay Siliconix meets the electrical requirements for voltage and current ratings. However, the package transition from TO-204AE to TO-247AC represents a mechanical difference that requires board-level evaluation for pin compatibility and thermal management considerations.

Parameter Comparison

Parameter	IXFM15N60	SIHG15N60E-GE3	Unit
Manufacturer	IXYS	Vishay Siliconix	—
Drain-to-Source Voltage (Vdss)	600	600	V
Continuous Drain Current (Id) @ 25°C	15	15	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	500 mOhm @ 7.5A, 10V	280 mOhm @ 8A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5 V @ 4mA	4 V @ 250µA	V
Gate Charge (Qg Max) @ Vgs	170	78	nC @ 10V
Power Dissipation (Max)	300	180	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-204AE	TO-247AC	Through Hole
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

SIHG15N60E-GE3 as Primary Substitute:

The SIHG15N60E-GE3 is an active product from Vishay Siliconix and meets the core electrical requirements of the IXFM15N60. Both devices share identical voltage and current ratings (600V, 15A), operate across the same temperature range (-55°C to 150°C TJ), and maintain RoHS3 compliance.

The SIHG15N60E-GE3 demonstrates superior electrical performance characteristics: on-state resistance is reduced to 280 mOhm (compared to 500 mOhm), and gate charge is significantly lower at 78 nC (compared to 170 nC). These improvements result in lower switching losses and reduced gate drive requirements.

Package Consideration:

The transition from TO-204AE to TO-247AC represents a mechanical change. Both are through-hole packages, but pin spacing and thermal pad geometry differ. Board-level layout modification is required to accommodate the TO-247AC footprint. The TO-247AC package provides improved thermal performance through a larger exposed pad, which may enhance heat dissipation in applications with elevated power dissipation requirements.

Compliance Status:

Both the original IXFM15N60 and the SIHG15N60E-GE3 substitute are RoHS3 compliant and carry EAR99 ECCN classification. No regulatory barriers exist for substitution in applicable markets.

Frequently Asked Questions (FAQ)

Q: Can the SIHG15N60E-GE3 be used as a direct pin-for-pin replacement for the IXFM15N60?

A: Both devices are N-Channel MOSFETs with identical voltage and current ratings. However, the package change from TO-204AE to TO-247AC requires board-level footprint modification. Pin-for-pin substitution on existing PCBs is not possible without layout redesign.

Q: What are the electrical advantages of the SIHG15N60E-GE3 over the IXFM15N60?

A: The SIHG15N60E-GE3 exhibits lower on-state resistance (280 mOhm versus 500 mOhm) and significantly reduced gate charge (78 nC versus 170 nC). These characteristics reduce conduction losses and gate drive power requirements, improving overall circuit efficiency.

Q: Are there thermal performance differences between these devices?

A: The IXFM15N60 is rated for 300W maximum power dissipation, while the SIHG15N60E-GE3 is rated for 180W. The TO-247AC package used in the SIHG15N60E-GE3 provides superior thermal characteristics through an enlarged exposed pad, but the lower power rating reflects the device's thermal design limits. Application thermal requirements must be evaluated against the 180W maximum rating.

Q: What is the moisture sensitivity level for both devices?

A: Both the IXFM15N60 and SIHG15N60E-GE3 carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions for storage or handling.

Q: Are both devices RoHS compliant?

A: Yes, both the IXFM15N60 and SIHG15N60E-GE3 are RoHS3 compliant and carry identical HTSUS and ECCN classifications (8541.29.0095 and EAR99, respectively).

Q: What is the primary reason to substitute the obsolete IXFM15N60?

A: The IXFM15N60 is classified as obsolete and no longer manufactured by IXYS. The SIHG15N60E-GE3 is an active product with ongoing availability, making it the appropriate choice for new designs, production continuity, and repair applications requiring long-term component supply.

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