IXFL80N50Q2 Equivalent & Substitute Parts

Part Overview

The IXFL80N50Q2 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 55A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in the ISOPLUS264™ package and is designed for high-voltage switching applications requiring through-hole mounting. The part is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's voltage, current, and thermal requirements. Alternative models may be necessary due to inventory availability, lead time considerations, or application-specific performance optimization.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	55	A (Tc)
Rds On (Max) @ Id, Vgs	66	mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs	260	nC @ 10V
Power Dissipation (Max)	625	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-264-3, TO-264AA	-

Substitute Part Grouping Explanation

Substitution eligibility for the IXFL80N50Q2 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 500V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Compatibility: TO-264 series (TO-264-3, TO-264AA)
Operating Temperature Range: -55°C to 150°C (TJ)

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 55A
Rds On (Max): Equal to or lower than 66mOhm
Gate Charge (Qg): Comparable within application switching frequency constraints
Power Dissipation (Max): Equal to or greater than 625W
Vgs (Max): ±30V
Product Status: Active

The identified substitute parts meet all mandatory criteria and provide equivalent or superior electrical performance characteristics within the specified parameter ranges.

Parameter Comparison

Parameter	IXFL80N50Q2	APT84M50L	FDL100N50F	Unit
Manufacturer	IXYS	Microchip Technology	onsemi	-
Drain to Source Voltage (Vdss)	500	500	500	V
Current - Continuous Drain (Id) @ 25°C	55	84	100	A (Tc)
Rds On (Max) @ Id, Vgs	66 @ 40A, 10V	65 @ 42A, 10V	55 @ 50A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	260 @ 10V	340 @ 10V	238 @ 10V	nC
Vgs(th) (Max) @ Id	5 @ 8mA	5 @ 2.5mA	5 @ 250µA	V
Input Capacitance (Ciss) (Max) @ Vds	10500 @ 25V	13500 @ 25V	12000 @ 25V	pF
Power Dissipation (Max)	625	1135	2500	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	-
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA	-
Vgs (Max)	±30	±30	±30	V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	-
Product Status	Active	Active	Active	-

Engineering Selection Recommendations

IXFL80N50Q2 (Primary Part) The IXFL80N50Q2 is the specified component and remains the first choice when available. It is Active in product status, RoHS3 compliant, and REACH unaffected. The part is manufactured by IXYS under the HiPerFET™ Q2 Class series.

APT84M50L (Microchip Technology) The APT84M50L is a direct substitute offering superior current handling at 84A versus 55A. It maintains the 500V Vdss rating and operates within the same temperature range. Rds On performance is equivalent at 65mOhm. Power dissipation capability is increased to 1135W. This part is Active in product status and meets all compliance requirements (RoHS3, REACH unaffected). Gate charge is higher at 340nC, which may impact switching frequency performance in high-speed applications.

FDL100N50F (onsemi) The FDL100N50F provides the highest current rating at 100A and lowest Rds On at 55mOhm, delivering superior thermal performance with 2500W power dissipation capability. It is manufactured under the UniFET™ series and is Active in product status with RoHS3 compliance and REACH unaffected status. Gate charge is lower at 238nC, providing advantages in high-frequency switching applications. Input capacitance is 12000pF, positioned between the other two options.

All three parts share identical 500V Vdss ratings, TO-264 package compatibility, through-hole mounting, and -55°C to 150°C operating temperature ranges.

Frequently Asked Questions (FAQ)

Q: Can the APT84M50L be used as a direct replacement for the IXFL80N50Q2?

A: Yes. The APT84M50L meets all mandatory substitution criteria: 500V Vdss, N-Channel MOSFET technology, through-hole mounting in TO-264 package, and -55°C to 150°C operating temperature range. The higher current rating (84A vs. 55A) and equivalent Rds On (65mOhm vs. 66mOhm) provide compatible or superior performance. Compliance status is identical (RoHS3, REACH unaffected).

Q: What are the differences between the FDL100N50F and the IXFL80N50Q2?

A: The FDL100N50F offers higher current capacity (100A vs. 55A), lower Rds On (55mOhm vs. 66mOhm), and significantly higher power dissipation (2500W vs. 625W). Gate charge is lower (238nC vs. 260nC), which reduces switching losses in high-frequency applications. All other critical parameters—voltage rating, package type, temperature range, and compliance certifications—are identical.

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three parts use TO-264 series packaging (TO-264-3, TO-264AA) with through-hole mounting. Physical footprint and pin configuration are compatible across all substitute options.

Q: How does gate charge affect part selection?

A: Gate charge (Qg) determines the energy required to switch the FET on and off. The IXFL80N50Q2 has 260nC gate charge, the APT84M50L has 340nC, and the FDL100N50F has 238nC. Higher gate charge increases switching losses and may require higher gate drive current. Lower gate charge reduces switching losses, beneficial in high-frequency applications. Selection depends on the specific switching frequency and gate drive circuit capability of the application.

Q: Do all substitute parts meet the same compliance and regulatory requirements?

A: Yes. The IXFL80N50Q2, APT84M50L, and FDL100N50F are all RoHS3 compliant and REACH unaffected. All three parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. Moisture sensitivity level is 1 (Unlimited) for IXFL80N50Q2 and APT84M50L; FDL100N50F is not applicable.

Q: Which substitute part should be selected for maximum thermal performance?

A: The FDL100N50F provides the highest power dissipation rating at 2500W (Tc) and the lowest Rds On at 55mOhm, resulting in the lowest conduction losses. This part is optimal for applications requiring maximum thermal headroom or operation at elevated current levels.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes, provided the PCB layout accommodates the TO-264 package footprint. All three parts share identical pin configuration and package dimensions within the TO-264 series. No PCB redesign is required for mechanical compatibility. Electrical circuit performance may vary due to differences in gate charge and input capacitance; verification of gate drive circuit performance is necessary for high-frequency applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message