IXFL60N60 N-Channel 600V 60A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFL60N60 is an N-Channel 600V 60A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in the ISOPLUS264™ package for through-hole mounting. This device is rated for 700W power dissipation and operates across the temperature range of -55°C to 150°C. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing system support and new design alternatives.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	60	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	80	mOhm @ 30A, 10V
Gate Threshold Voltage Vgs(th) (Max)	4	V @ 8mA
Gate Charge (Qg) (Max)	380	nC @ 10V
Input Capacitance (Ciss) (Max)	10000	pF @ 25V
Power Dissipation (Max)	700	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	ISOPLUS264™	TO-264-3, TO-264AA
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFL60N60 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 600V
Continuous Drain Current (Id) must meet or exceed the application requirement
Drive Voltage (Max Rds On) must be compatible at 10V
Gate Threshold Voltage (Vgs(th)) must be within acceptable switching characteristics
Operating Temperature Range must span -55°C to 150°C minimum

Mechanical Compatibility Criteria:

Mounting Type: Through Hole required
Package compatibility: ISOPLUS264™ or equivalent TO-264 variants acceptable

The substitute parts listed below satisfy these criteria with variations in current rating, power dissipation, and gate charge characteristics that allow functional replacement in applications where the IXFL60N60 is no longer available.

Parameter Comparison

Parameter	IXFL60N60	IXFL82N60P	APT66F60L	FCH104N60	FCH104N60F-F085	R6046FNZ1C9
Manufacturer	IXYS	IXYS	Microchip Technology	onsemi	onsemi	Rohm Semiconductor
Vdss (V)	600	600	600	600	600	600
Id @ 25°C (A)	60	55	70	37	37	46
Rds On (Max) (mOhm)	80 @ 30A, 10V	78 @ 41A, 10V	90 @ 33A, 10V	104 @ 18.5A, 10V	104 @ 18.5A, 10V	98 @ 23A, 10V
Vgs(th) (Max) (V)	4 @ 8mA	5 @ 8mA	5 @ 2.5mA	3.5 @ 250µA	5 @ 250µA	5 @ 1mA
Gate Charge Qg (Max) (nC)	380 @ 10V	240 @ 10V	330 @ 10V	82 @ 10V	139 @ 10V	150 @ 10V
Ciss (Max) (pF)	10000 @ 25V	23000 @ 25V	13190 @ 25V	4165 @ 380V	4302 @ 100V	6230 @ 25V
Power Dissipation (Max) (W)	700	625	1135	357	357	120
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	150
Package	ISOPLUS264™	ISOPLUS264™	TO-264 [L]	TO-247-3	TO-247-3	TO-247
Product Status	Obsolete	Active	Active	Obsolete	Not For New Designs	Obsolete
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IXFL82N60P

The IXFL82N60P is the closest functional equivalent to the IXFL60N60. Both devices are manufactured by IXYS in the HiPerFET™ series and share the same ISOPLUS264™ package. The IXFL82N60P is currently in active production status, ensuring long-term availability. While the continuous drain current is rated at 55A compared to the IXFL60N60's 60A, the Rds On specification of 78mOhm is superior, and the device maintains full compatibility across the -55°C to 150°C operating temperature range. The IXFL82N60P carries ROHS3 compliance, providing regulatory advantage over the original part.

Secondary Substitute: APT66F60L

The APT66F60L, manufactured by Microchip Technology in the POWER MOS 8™ series, offers the highest continuous drain current rating at 70A and superior power dissipation capability at 1135W. This device is actively produced and ROHS3 compliant. The package is TO-264 [L], which is mechanically compatible with the original ISOPLUS264™ footprint. The APT66F60L is suitable for applications requiring higher current capacity or thermal performance than the original IXFL60N60.

Alternative Substitutes: FCH104N60 and FCH104N60F-F085

The onsemi SuperFET® II series devices (FCH104N60 and FCH104N60F-F085) provide substitution options with reduced current ratings of 37A. These devices are housed in TO-247-3 packages, requiring PCB layout modifications. The FCH104N60F-F085 variant includes AEC-Q101 automotive qualification and is suitable for automotive applications. Both devices have lower gate charge and input capacitance, which may benefit switching speed in certain circuit topologies.

Tertiary Substitute: R6046FNZ1C9

The Rohm Semiconductor R6046FNZ1C9 provides a 46A rated alternative in TO-247 package. This device is obsolete and carries a reduced power dissipation specification of 120W, limiting its applicability to lower-power applications. The operating temperature specification is incomplete in the provided data (150°C only), which may indicate limitations at the lower temperature extreme.

Frequently Asked Questions (FAQ)

Q: Can the IXFL82N60P directly replace the IXFL60N60 without PCB modifications?

A: Yes. Both devices use the ISOPLUS264™ package with identical through-hole pin configuration. No PCB layout changes are required for direct substitution.

Q: What is the impact of the 5A lower current rating on the IXFL82N60P compared to the IXFL60N60?

A: The IXFL82N60P is rated for 55A continuous drain current versus 60A for the IXFL60N60. Applications operating below 55A will experience no performance degradation. Applications requiring the full 60A rating must use the APT66F60L or verify that peak current demands do not exceed 55A during normal operation.

Q: Why do the onsemi FCH104N60 devices have significantly lower gate charge?

A: The FCH104N60 series devices have lower gate charge (82–139 nC) due to different semiconductor process technology and die design compared to the IXYS HiPerFET™ series. Lower gate charge reduces driver power consumption and may improve switching frequency capability, but requires verification of gate driver compatibility.

Q: Are the TO-247-3 packaged devices (FCH104N60 series) suitable as direct replacements?

A: No. The TO-247-3 package has a different physical footprint and pin spacing compared to the ISOPLUS264™ package. PCB redesign is required for mechanical and electrical integration. These devices are suitable only for new designs or systems undergoing layout revision.

Q: What is the significance of the ROHS3 compliance on substitute parts?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. The original IXFL60N60 does not specify RoHS status. Substitute parts with ROHS3 compliance (IXFL82N60P, APT66F60L, FCH104N60, FCH104N60F-F085, R6046FNZ1C9) are preferred for applications subject to environmental regulations or customer requirements.

Q: Can the APT66F60L be used in applications designed for the IXFL60N60?

A: Yes, with verification. The APT66F60L exceeds the electrical specifications of the IXFL60N60 (70A vs. 60A, 1135W vs. 700W). The TO-264 [L] package is mechanically compatible with ISOPLUS264™ footprints. Applications will operate within safe margins. Gate charge and input capacitance differences may require gate driver verification to ensure proper switching behavior.

Q: What is the difference between FCH104N60 and FCH104N60F-F085?

A: Both devices are onsemi SuperFET® II MOSFETs with identical electrical ratings (37A, 600V, 357W). The FCH104N60F-F085 includes AEC-Q101 automotive qualification and is designated "Not For New Designs," while the FCH104N60 is classified as "Obsolete." The FCH104N60F-F085 is suitable for automotive applications requiring qualification traceability.

Q: Why is the R6046FNZ1C9 listed as a substitute despite lower power dissipation?

A: The R6046FNZ1C9 meets the core electrical requirements (600V, 46A, -55°C to 150°C operation) and is included in the provided substitute list. However, the 120W power dissipation rating is significantly lower than the IXFL60N60's 700W, restricting its use to applications with reduced thermal demands. This device is suitable only for low-power variants of systems originally designed for the IXFL60N60.

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