IXFL44N80 N-Channel MOSFET 800V 44A Equivalent & Substitute Parts

Part Overview

The IXFL44N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 44A continuous drain current at 25°C. This device is packaged in the ISOPLUS264™ through-hole format and is part of the HiPerFET™ series from IXYS. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFL44N80

IXYSIn Stock: 881IXFL44N80 Datasheet

Current PartRFQ

IXFK44N80P

IXYSIn Stock: 1414IXFK44N80P Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFL44N80 is determined by matching the following critical electrical and mechanical parameters:

Electrical Matching Criteria:

• Drain-to-Source Voltage (Vdss): 800V minimum
• Continuous Drain Current (Id): 44A at 25°C
• On-State Resistance (Rds On): Comparable performance at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
• Operating Temperature Range: -55°C to 150°C

Mechanical Matching Criteria:

• Package Type: TO-264-3 or TO-264AA through-hole format
• Mounting Type: Through-hole configuration

The IXFK44N80P qualifies as a direct substitute based on identical voltage and current ratings, compatible package designation, and through-hole mounting compatibility. Both devices operate within the same temperature range and share the same base product number series (44A, 800V class).

Parameter Comparison

Engineering Selection Recommendations

IXFK44N80P as Primary Substitute:

The IXFK44N80P is the recommended substitute for the obsolete IXFL44N80. Both devices share identical voltage and current ratings (800V, 44A), compatible through-hole package formats (TO-264AA), and operate across the same temperature range (-55°C to 150°C).

The IXFK44N80P holds active product status, ensuring ongoing availability and manufacturing support. This part is RoHS3 compliant, whereas the IXFL44N80 compliance status is not specified. Both devices maintain REACH Unaffected status and EAR99 export classification.

Performance Considerations:

The IXFK44N80P exhibits higher power dissipation capability (1040W versus 550W), lower gate charge (198 nC versus 380 nC), and higher maximum gate voltage rating (±30V versus ±20V). The on-state resistance is slightly higher (190 mOhm versus 165 mOhm at 22A, 10V), and input capacitance is marginally increased (12000 pF versus 10000 pF at 25V). These differences remain within acceptable substitution parameters for the 44A, 800V MOSFET class.

Compliance and Regulatory:

Both parts are classified under HTSUS 8541.29.0095 and carry EAR99 export designation. The IXFK44N80P's RoHS3 compliance provides additional regulatory alignment for new designs and procurement cycles.

Frequently Asked Questions (FAQ)

Q: Can the IXFK44N80P directly replace the IXFL44N80 in existing designs?

A: Yes. Both devices are rated for 800V drain-to-source voltage and 44A continuous drain current at 25°C. They share compatible TO-264AA through-hole package formats and operate across identical temperature ranges (-55°C to 150°C). The IXFK44N80P is the designated substitute for the obsolete IXFL44N80.

Q: What are the key differences between these two parts?

A: The primary differences are product status (IXFK44N80P is active; IXFL44N80 is obsolete), power dissipation rating (1040W versus 550W), gate charge (198 nC versus 380 nC), and maximum gate voltage (±30V versus ±20V). On-state resistance is slightly higher in the IXFK44N80P (190 mOhm versus 165 mOhm at 22A, 10V).

Q: Are there package compatibility concerns when substituting?

A: No. Both the IXFL44N80 and IXFK44N80P use TO-264-3 and TO-264AA through-hole package designations. Pin configuration and mechanical dimensions are compatible for direct board-level substitution.

Q: Does the IXFK44N80P have better regulatory compliance?

A: The IXFK44N80P is RoHS3 compliant, whereas the IXFL44N80 compliance status is not specified. Both parts maintain REACH Unaffected status and EAR99 export classification. The IXFK44N80P is preferred for new designs requiring RoHS3 certification.

Q: What is the significance of the lower gate charge in the IXFK44N80P?

A: Lower gate charge (198 nC versus 380 nC) indicates faster switching characteristics and reduced gate drive power requirements. This can improve circuit efficiency and reduce thermal stress on gate drive circuitry, though both devices operate at the same 10V drive voltage specification.

Q: Can the higher power dissipation rating of the IXFK44N80P affect thermal design?

A: The IXFK44N80P's higher power dissipation rating (1040W versus 550W) indicates improved thermal performance and greater headroom for continuous operation. This does not require changes to existing thermal designs; it provides additional margin for reliability.

Q: Is the IXFK44N80P available in the same packaging options?

A: Yes. The IXFK44N80P is supplied in tube packaging and maintains the same TO-264AA through-hole format as the IXFL44N80. Both devices are suitable for automated assembly and manual insertion processes.