IXFL34N100 Equivalent & Substitute Parts

Part Overview

The IXFL34N100 is an N-Channel 1000V 30A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in the ISOPLUS264™ package for through-hole mounting applications. This device is rated for 550W maximum power dissipation and operates across the temperature range of -55°C to 150°C. The part is currently classified as Not For New Designs, indicating that IXYS has discontinued active development for this model. Identification of equivalent and substitute parts is necessary for design continuity, inventory management, and sourcing alternatives that maintain electrical and mechanical compatibility within specified application parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
Rds On (Max) @ Id, Vgs	280	mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs	380	nC @ 10V
Power Dissipation (Max)	550	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	ISOPLUS264™	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IXFL34N100 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 1000V
Continuous Drain Current (Id) must support minimum 30A operation
Gate Charge (Qg) and Input Capacitance (Ciss) must remain within acceptable switching performance ranges
On-state resistance (Rds On) must not exceed application thermal limits
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Through-hole mounting configuration required
Package footprint and pin configuration must accommodate existing PCB layouts
Thermal characteristics must support 550W power dissipation or greater

Substitute parts are grouped based on whether they meet these criteria while maintaining functional equivalence. Parts that exceed the original specifications in current rating, power dissipation, or voltage rating are classified as direct substitutes when all other parameters remain compatible.

Parameter Comparison

Parameter	IXFL34N100	IXFL38N100P	APT34F100B2
Manufacturer	IXYS	IXYS	Microchip Technology
Vdss (V)	1000	1000	1000
Id @ 25°C (A)	30	29	35
Rds On (Max) (mOhm)	280 @ 30A, 10V	230 @ 19A, 10V	380 @ 18A, 10V
Gate Charge Qg (nC)	380 @ 10V	350 @ 10V	305 @ 10V
Power Dissipation (W)	550	520	1135
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package Type	ISOPLUS264™	ISOPLUSi5-PAK™	T-MAX™ [B2]
Product Status	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFL38N100P (IXYS): This part maintains electrical equivalence with the IXFL34N100 across all critical voltage and temperature parameters. The 29A continuous drain current specification is marginally lower than the original 30A rating; however, the lower gate charge (350 nC vs. 380 nC) and improved on-state resistance (230 mOhm vs. 280 mOhm) provide superior switching efficiency. The ISOPLUSi5-PAK™ package differs mechanically from the ISOPLUS264™, requiring PCB layout verification. This part carries Active product status, ensuring long-term availability and supply chain stability. ROHS3 compliance and unlimited moisture sensitivity level match the original specification.

APT34F100B2 (Microchip Technology): This part exceeds the original electrical specifications with a 35A continuous drain current rating and significantly higher power dissipation capability (1135W vs. 550W). The 1000V Vdss rating and -55°C to 150°C operating range provide full electrical compatibility. The lower gate charge (305 nC) supports faster switching performance. The T-MAX™ [B2] package (TO-247-3 Variant) represents a different mechanical form factor than the ISOPLUS264™, necessitating PCB redesign. This part maintains Active product status with ROHS3 compliance. Selection of this part is appropriate for applications requiring enhanced thermal performance or higher current capacity within the same voltage class.

Both substitute parts are ROHS3 compliant and REACH unaffected, matching the regulatory status of the original IXFL34N100. Selection between substitutes depends on package compatibility with existing PCB designs and whether enhanced performance specifications are required for the target application.

Frequently Asked Questions (FAQ)

Q: Can the IXFL38N100P directly replace the IXFL34N100 without PCB modification?

A: Electrical substitution is valid; however, mechanical substitution requires verification. The IXFL38N100P uses the ISOPLUSi5-PAK™ package while the IXFL34N100 uses ISOPLUS264™. Pin configurations and footprints differ between these packages. PCB layout assessment is required to determine if the new package can be accommodated within existing hole patterns and trace routing.

Q: What is the significance of the lower gate charge in the APT34F100B2?

A: Gate charge (Qg) directly affects switching speed and gate drive circuit requirements. The APT34F100B2 specifies 305 nC compared to the IXFL34N100's 380 nC. Lower gate charge enables faster switching transitions, reducing switching losses and potentially improving overall circuit efficiency. Gate drive circuits must be verified to ensure compatibility with the lower charge requirement.

Q: Why does the IXFL38N100P have lower on-state resistance despite similar voltage and temperature ratings?

A: On-state resistance (Rds On) is a function of die design, process technology, and channel geometry. The IXFL38N100P achieves 230 mOhm at 19A compared to the IXFL34N100's 280 mOhm at 30A. These measurements are taken at different current levels; direct comparison requires normalization to the same operating point. The lower Rds On value indicates improved conduction efficiency at the specified measurement condition.

Q: Is the APT34F100B2 suitable for applications originally designed for 30A operation?

A: Yes. The APT34F100B2 is rated for 35A continuous drain current, exceeding the original 30A specification. This provides design margin and thermal headroom. The higher power dissipation rating (1135W vs. 550W) indicates superior thermal performance. Applications operating at or below 30A will function within the APT34F100B2's safe operating area with reduced thermal stress.

Q: What compliance certifications apply to all three parts?

A: All three parts—IXFL34N100, IXFL38N100P, and APT34F100B2—are ROHS3 compliant and REACH unaffected. Moisture sensitivity level is 1 (Unlimited) for all parts, indicating no special moisture control requirements during storage or handling. ECCN classification is EAR99 for all parts, and HTSUS code 8541.29.0095 applies uniformly.

Q: Can the APT34F100B2 be used in high-frequency switching applications?

A: The APT34F100B2 exhibits lower gate charge (305 nC) and lower input capacitance (9835 pF) compared to the IXFL34N100 (380 nC and 9200 pF respectively). These characteristics support higher switching frequencies with reduced gate drive power requirements. However, switching frequency suitability depends on the specific gate drive circuit design and thermal management of the application. Verification with application-specific parameters is necessary.

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