IXFL100N50P Equivalent & Substitute Parts

Part Overview

The IXFL100N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 70A continuous drain current at 25°C. This device is packaged in the ISOPLUS264™ (TO-264-3) through-hole configuration and is designed for high-power switching applications requiring robust thermal performance up to 625W. The part is Active in product status and ROHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining mechanical compatibility through the same or compatible package types.

Substiute Parts

IXFL100N50P

IXYSIn Stock: 821IXFL100N50P Datasheet

Current PartRFQ

FDL100N50F

onsemiIn Stock: 6209FDL100N50F Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFL100N50P is determined by the following critical parameters:

Voltage Rating: Drain-to-source voltage must equal or exceed 500V to maintain dielectric integrity in the application circuit.

Current Rating: Continuous drain current must meet or exceed the 70A requirement at 25°C to ensure the substitute can handle the specified load without thermal derating.

On-State Resistance: Rds On characteristics must be compatible with the application's power dissipation budget. The maximum on-state resistance at rated conditions determines switching losses and thermal performance.

Gate Characteristics: Gate threshold voltage and gate charge must fall within compatible ranges to ensure proper gate drive circuit operation without modification.

Package Compatibility: The substitute must use the TO-264-3 or mechanically equivalent through-hole package to maintain PCB layout and thermal interface compatibility.

Compliance Status: Both parts must maintain equivalent regulatory compliance (ROHS3, REACH Unaffected, EAR99).

The FDL100N50F from onsemi meets these substitution criteria with equivalent voltage and temperature ratings, compatible gate characteristics, and the same through-hole package family.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitution: The FDL100N50F is a direct substitute for the IXFL100N50P based on electrical equivalence and package compatibility.

Voltage and Temperature Ratings: Both devices are rated for 500V Vdss and operate across the identical temperature range of -55°C to 150°C, ensuring thermal and electrical performance parity in the application environment.

Current Capacity: The FDL100N50F provides 100A continuous drain current, exceeding the IXFL100N50P's 70A rating. This higher current capacity does not create incompatibility; the substitute can be used in applications designed for the lower-rated device without derating.

On-State Resistance: The FDL100N50F exhibits 55mOhm Rds On at 50A and 10V, compared to 52mOhm for the IXFL100N50P. This 3mOhm difference is within acceptable engineering tolerance for high-power switching applications and does not materially affect circuit performance.

Gate Characteristics: Gate threshold voltage and gate charge are equivalent between both devices, ensuring compatible gate drive circuit operation without modification.

Thermal Performance: The FDL100N50F is rated for 2500W maximum power dissipation, substantially higher than the IXFL100N50P's 625W rating. This provides additional thermal margin in applications operating near the original part's power limits.

Regulatory Compliance: Both parts maintain ROHS3 compliance, REACH Unaffected status, and EAR99 classification, satisfying equivalent regulatory requirements.

Package Compatibility: Both devices use the TO-264-3 through-hole package, ensuring direct PCB layout compatibility and identical thermal interface characteristics.

Frequently Asked Questions (FAQ)

Q: Can the FDL100N50F be used as a direct replacement for the IXFL100N50P in existing designs?

A: Yes. Both devices share identical voltage ratings (500V Vdss), compatible gate characteristics, and the same TO-264-3 through-hole package. The FDL100N50F's higher current rating (100A vs. 70A) and superior power dissipation capability (2500W vs. 625W) provide additional performance margin without requiring circuit modification.

Q: What is the significance of the 3mOhm difference in Rds On between these devices?

A: The FDL100N50F exhibits 55mOhm Rds On at 50A and 10V, compared to 52mOhm for the IXFL100N50P. This difference results in marginally higher conduction losses in the FDL100N50F. For most high-power switching applications, this 3mOhm variance is within acceptable engineering tolerance and does not require circuit redesign.

Q: Are the gate drive requirements identical between these two MOSFETs?

A: Gate threshold voltage (Vgs(th)) is 5V for both devices, and maximum gate charge is nearly identical (240nC vs. 238nC at 10V). Gate drive circuits designed for the IXFL100N50P operate without modification on the FDL100N50F. The maximum gate voltage rating is ±30V for both devices.

Q: Do these devices require different PCB layout considerations?

A: No. Both devices use the TO-264-3 through-hole package with identical pin configuration and thermal interface. PCB layouts designed for the IXFL100N50P accommodate the FDL100N50F without modification.

Q: What is the difference in input capacitance between these devices?

A: The IXFL100N50P has 20000pF input capacitance at 25V, while the FDL100N50F has 12000pF. The lower input capacitance of the FDL100N50F results in faster switching transitions and reduced gate drive power requirements, providing a performance advantage in high-frequency switching applications.

Q: Are both devices compliant with current regulatory standards?

A: Yes. Both the IXFL100N50P and FDL100N50F are ROHS3 compliant, REACH Unaffected, and classified as EAR99 for export control purposes. They meet equivalent regulatory requirements for industrial and commercial applications.

Q: Can the FDL100N50F be used in applications where thermal performance is critical?

A: Yes. The FDL100N50F's 2500W maximum power dissipation rating significantly exceeds the IXFL100N50P's 625W rating, providing substantial thermal margin. Applications operating near the original part's power limits benefit from the substitute's enhanced thermal capability.