IXFK90N30 Equivalent & Substitute Parts

Part Overview

The IXFK90N30 is an N-Channel MOSFET rated for 300V drain-to-source voltage with 90A continuous drain current at 25°C. This device is manufactured by IXYS in the HiPerFET™ series and is packaged in a TO-264AA through-hole configuration. The part is designated as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for applications requiring continued sourcing, design updates, or performance optimization within the same voltage and package class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	90	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	33 mOhm @ 45A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 8mA
Power Dissipation (Max)	560	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-264AA	Through Hole
Mounting Type	Through Hole	-

Substitute Part Grouping Explanation

Substitution of the IXFK90N30 is determined by the following critical parameters:

Voltage Class Compatibility: The substitute part must maintain the same 300V drain-to-source voltage rating to ensure safe operation in the target circuit without overstress conditions.

Package Compatibility: The substitute must use the TO-264AA through-hole package to maintain mechanical and thermal interface compatibility with existing PCB layouts and heatsink mounting arrangements.

Current Rating Consideration: While the IXFK90N30 is rated for 90A continuous drain current, substitute parts may have higher current ratings. Higher current ratings do not prevent substitution; they provide additional design margin and thermal performance headroom.

On-State Resistance (Rds On): The substitute part's Rds On specification must be equal to or lower than the main part to ensure equivalent or improved conduction losses and thermal performance.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with lower gate charge and input capacitance values provide improved switching characteristics.

Temperature Range: The substitute must support the same or wider operating temperature range (-55°C to 150°C) to maintain functional compatibility across all application environments.

Compliance and Status: The substitute part must maintain RoHS3 compliance, REACH unaffected status, and preferably be in "Active" product status to ensure long-term availability and supply chain stability.

Parameter Comparison

Parameter	IXFK90N30	IXFK140N30P	Unit
Manufacturer	IXYS	IXYS	-
Series	HiPerFET™	HiPerFET™, Polar	-
Product Status	Not For New Designs	Active	-
FET Type	N-Channel	N-Channel	-
Drain-to-Source Voltage (Vdss)	300	300	V
Continuous Drain Current (Id) @ 25°C	90	140	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	33 mOhm @ 45A, 10V	24 mOhm @ 70A, 10V	mOhm
Vgs(th) (Max) @ Id	4	5	V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	360	185	nC @ 10V
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	10000	14800	pF @ 25V
Power Dissipation (Max)	560	1040	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	-
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	-
REACH Status	REACH Unaffected	REACH Unaffected	-

Engineering Selection Recommendations

IXFK140N30P as Primary Substitute

The IXFK140N30P is the direct substitute for the IXFK90N30. Both devices share identical voltage ratings (300V Vdss), identical package configuration (TO-264AA through-hole), identical operating temperature range (-55°C to 150°C), and identical compliance certifications (RoHS3, REACH unaffected).

The IXFK140N30P provides superior electrical performance characteristics:

Higher continuous drain current rating (140A vs. 90A) provides increased current handling capacity
Lower on-state resistance (24 mOhm @ 70A, 10V vs. 33 mOhm @ 45A, 10V) reduces conduction losses
Reduced gate charge (185 nC vs. 360 nC) improves switching speed and reduces gate drive power requirements
Higher power dissipation rating (1040W vs. 560W) enhances thermal performance margin

The IXFK140N30P maintains "Active" product status, ensuring long-term availability and supply chain continuity, whereas the IXFK90N30 is designated "Not For New Designs."

Substitution Compatibility

Direct substitution of the IXFK140N30P for the IXFK90N30 is mechanically and electrically compatible. The identical package, voltage class, and temperature range ensure no modifications to PCB layout, heatsink mounting, or thermal management are required. The improved electrical specifications of the IXFK140N30P provide enhanced performance without introducing any functional incompatibilities.

Frequently Asked Questions (FAQ)

Q: Can the IXFK140N30P be used as a direct replacement for the IXFK90N30 without PCB modifications?

A: Yes. Both devices use the TO-264AA through-hole package with identical pinout and mechanical dimensions. No PCB layout changes are required. The substitute part can be installed directly into existing PCB footprints designed for the IXFK90N30.

Q: What is the primary reason for substituting the IXFK90N30?

A: The IXFK90N30 is designated "Not For New Designs" by the manufacturer, indicating it has been superseded. The IXFK140N30P is the active replacement with improved electrical performance and guaranteed long-term availability.

Q: Does the higher current rating of the IXFK140N30P (140A vs. 90A) create any compatibility issues?

A: No. A higher current rating does not create compatibility issues. The IXFK140N30P can safely operate at or below the 90A current level of the original part. The higher rating provides additional design margin and thermal performance headroom.

Q: How do the on-state resistance values compare between the two parts?

A: The IXFK140N30P has lower on-state resistance (24 mOhm @ 70A, 10V) compared to the IXFK90N30 (33 mOhm @ 45A, 10V). Lower on-state resistance reduces conduction losses and improves thermal efficiency.

Q: Are there any differences in gate drive requirements between these parts?

A: The IXFK140N30P has significantly lower gate charge (185 nC vs. 360 nC), which reduces gate drive power requirements and improves switching speed. Existing gate drive circuits designed for the IXFK90N30 will operate effectively with the IXFK140N30P.

Q: Do both parts meet the same compliance and regulatory requirements?

A: Yes. Both the IXFK90N30 and IXFK140N30P are RoHS3 compliant, REACH unaffected, and carry identical moisture sensitivity levels (MSL 1 - Unlimited). Both are suitable for applications requiring regulatory compliance in these areas.

Q: What is the thermal performance difference between these parts?

A: The IXFK140N30P has a higher maximum power dissipation rating (1040W vs. 560W), indicating superior thermal performance. Combined with lower on-state resistance, the IXFK140N30P operates cooler under equivalent current conditions.

Q: Can the IXFK140N30P be used in applications originally designed for the IXFK90N30 without circuit redesign?

A: Yes. The identical voltage rating, package, temperature range, and gate drive characteristics ensure the IXFK140N30P functions as a direct substitute without requiring circuit redesign. The improved electrical specifications provide enhanced performance margins.

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