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IXFK90N20Q Equivalent & Substitute Parts
Part Overview
The IXFK90N20Q is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 90A continuous drain current at 25°C. This device is packaged in a TO-264AA through-hole configuration and is part of the HiPerFET™ Q Class series. The part is designated as "Not For New Designs," indicating it has been superseded in the product lifecycle. Identifying equivalent and substitute parts is necessary for applications requiring continued support, maintenance, or where design flexibility permits component selection from the active product portfolio.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 90 | A |
| On-State Resistance (Rds On Max) @ 10V | 22 | mOhm |
| Gate Threshold Voltage (Vgs th Max) | 4 | V |
| Power Dissipation (Max) | 500 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-264AA | Through Hole |
| FET Type | N-Channel |
Substitute Part Grouping Explanation
Substitution of the IXFK90N20Q is determined by the following critical parameters:
Voltage Rating Compatibility: All substitute parts must maintain the same or higher Vdss rating. The IXFK90N20Q operates at 200V; substitutes at 200V are direct voltage equivalents, while 250V-rated devices provide additional voltage margin.
Current Capacity: Substitute parts must support equal or greater continuous drain current (Id). The IXFK90N20Q is rated for 90A; substitutes rated at 120A or 170A provide increased current capacity while remaining compatible with applications designed for 90A operation.
Package Compatibility: All substitute parts use the TO-264AA through-hole package, ensuring mechanical and thermal interface compatibility.
On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation. Substitutes with lower Rds On ratings provide performance enhancement without compromising functionality.
Operating Temperature Range: The IXFK90N20Q operates from -55°C to 150°C. Substitutes with equal or extended temperature ranges maintain thermal compatibility.
Product Status and Compliance: Active product status ensures continued availability and support. All substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the original part's regulatory standing.
Parameter Comparison
| Parameter | IXFK90N20Q | IXFK120N20P | IXFK170N20T | IXFK170N25X3 |
|---|---|---|---|---|
| Vdss (V) | 200 | 200 | 200 | 250 |
| Id @ 25°C (A) | 90 | 120 | 170 | 170 |
| Rds On Max @ 10V (mOhm) | 22 | 22 | 11 | 7.4 |
| Vgs(th) Max @ 4mA (V) | 4 | 5 | 5 | 4.5 |
| Gate Charge (Qg) @ 10V (nC) | 190 | 152 | 265 | 190 |
| Power Dissipation Max (W) | 500 | 714 | 1150 | 960 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 175 | -55 to 150 |
| Package | TO-264AA | TO-264AA | TO-264AA | TO-264AA |
| Product Status | Not For New Designs | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IXFK120N20P is suitable for applications requiring the same 200V voltage rating and similar on-state resistance characteristics as the IXFK90N20Q. This part provides 33% higher current capacity (120A versus 90A) while maintaining identical Vdss and comparable Rds On performance. The IXFK120N20P is in active product status, ensuring long-term availability and support. This substitute is appropriate for direct replacement in existing designs where the increased current margin provides design flexibility without requiring circuit modifications.
IXFK170N20T offers the same 200V voltage rating as the IXFK90N20Q with significantly enhanced performance characteristics. The continuous drain current rating of 170A provides 89% additional capacity, and the on-state resistance is reduced to 11 mOhm (50% lower than the original part), resulting in improved efficiency and reduced thermal dissipation. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin. This part is in active product status. The IXFK170N20T is recommended for applications where thermal performance and current capacity are critical design factors.
IXFK170N25X3 provides the highest voltage rating (250V) among the substitute options, making it suitable for applications requiring additional voltage headroom beyond the original 200V specification. This part delivers 170A continuous drain current and the lowest on-state resistance (7.4 mOhm), providing superior efficiency. The IXFK170N25X3 is in active product status and maintains full regulatory compliance. This substitute is appropriate for designs where voltage derating or future voltage margin is a design requirement.
All substitute parts maintain TO-264AA through-hole packaging, RoHS3 compliance, and REACH unaffected status, ensuring compatibility with existing PCB layouts and regulatory requirements.
Frequently Asked Questions (FAQ)
Q: Can the IXFK120N20P directly replace the IXFK90N20Q in existing applications?
A: Yes. The IXFK120N20P maintains the same 200V voltage rating, identical on-state resistance (22 mOhm @ 10V), and compatible gate threshold voltage. The higher current rating (120A versus 90A) does not create compatibility issues in applications designed for 90A operation. Both parts use the TO-264AA package and operate across the same temperature range (-55°C to 150°C).
Q: What is the primary advantage of the IXFK170N20T over the IXFK90N20Q?
A: The IXFK170N20T provides 89% higher continuous drain current (170A versus 90A) and 50% lower on-state resistance (11 mOhm versus 22 mOhm). These characteristics result in reduced power dissipation and improved thermal performance. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin compared to the original part's -55°C to 150°C range.
Q: Why would the IXFK170N25X3 be selected instead of the IXFK170N20T?
A: The IXFK170N25X3 is selected when the application requires a higher voltage rating. With a 250V Vdss rating versus 200V, this part provides 25% additional voltage margin. The IXFK170N25X3 also features the lowest on-state resistance (7.4 mOhm) among all options, delivering superior efficiency. This part is appropriate for designs requiring voltage derating or applications where supply voltage may exceed 200V.
Q: Are all substitute parts available in the same packaging as the IXFK90N20Q?
A: Yes. All substitute parts (IXFK120N20P, IXFK170N20T, and IXFK170N25X3) are packaged in TO-264AA through-hole configuration, identical to the IXFK90N20Q. This ensures compatibility with existing PCB layouts and thermal management solutions without requiring mechanical redesign.
Q: What is the significance of the "Not For New Designs" status of the IXFK90N20Q?
A: This designation indicates the part has been superseded in the manufacturer's product lifecycle. While existing inventory remains available, IXYS recommends using active-status alternatives for new designs. All three substitute parts carry "Active" product status, ensuring continued manufacturing support, availability, and technical documentation.
Q: Do the substitute parts maintain the same regulatory compliance as the IXFK90N20Q?
A: Yes. All substitute parts are RoHS3 compliant and REACH unaffected, matching the original part's regulatory standing. This ensures compatibility with applications subject to environmental and hazardous substance restrictions.
Q: How does gate charge (Qg) affect the selection of a substitute part?
A: Gate charge influences gate drive circuit design and switching speed. The IXFK90N20Q has a gate charge of 190 nC @ 10V. The IXFK120N20P has lower gate charge (152 nC), requiring less drive energy. The IXFK170N20T has higher gate charge (265 nC), requiring more robust gate drive. The IXFK170N25X3 matches the original at 190 nC. Selection depends on whether the existing gate drive circuit can accommodate the substitute part's gate charge specification.
Q: What is the impact of input capacitance (Ciss) when selecting a substitute?
A: Input capacitance affects gate drive circuit impedance and switching transient behavior. The IXFK90N20Q has Ciss of 6800 pF @ 25V. The IXFK120N20P has lower Ciss (6000 pF), while the IXFK170N20T has significantly higher Ciss (19600 pF), and the IXFK170N25X3 has intermediate Ciss (13500 pF). Higher Ciss may require gate drive circuit optimization to maintain switching performance.
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