IXFK90N20 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK90N20 is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 90A continuous drain current at 25°C. This device is packaged in TO-264AA (IXFK) through-hole configuration and belongs to the HiPerFET™ series. The part is classified as "Not For New Designs," indicating it has reached end-of-life status. Identifying equivalent and substitute parts is necessary for applications requiring continued component availability, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	90	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	23 mOhm @ 45A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 8mA
Gate Charge (Qg Max) @ Vgs	380	nC @ 10V
Power Dissipation (Max)	500	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-264AA (IXFK)	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFK90N20 is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must equal or exceed 90A at 25°C
Package Type: Must be through-hole compatible (TO-264AA or equivalent footprint)
Gate Drive Voltage: Must support 10V drive voltage
Operating Temperature Range: Must encompass -55°C to 150°C minimum

Secondary Compatibility Criteria:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
Vgs(th): Must be compatible with existing gate drive circuits

The substitute parts listed below meet or exceed the primary criteria, enabling direct or near-direct replacement in applications designed for the IXFK90N20.

Parameter Comparison

Parameter	IXFK90N20	IXFK120N20P	IXFK170N20T	IXFK170N25X3	IRFP90N20DPBF
Manufacturer	IXYS	IXYS	IXYS	IXYS	Infineon Technologies
Vdss (V)	200	200	200	250	200
Id @ 25°C (A Tc)	90	120	170	170	94
Rds On Max (mOhm)	23 @ 45A, 10V	22 @ 500mA, 10V	11 @ 60A, 10V	7.4 @ 85A, 10V	23 @ 56A, 10V
Vgs(th) Max (V)	4 @ 8mA	5 @ 4mA	5 @ 4mA	4.5 @ 4mA	5 @ 250µA
Qg Max (nC)	380 @ 10V	152 @ 10V	265 @ 10V	190 @ 10V	270 @ 10V
Ciss Max (pF)	9000 @ 25V	6000 @ 25V	19600 @ 25V	13500 @ 25V	6040 @ 25V
Power Dissipation Max (W Tc)	500	714	1150	960	580
Operating Temperature (°C TJ)	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 175
Package Type	TO-264AA (IXFK)	TO-264AA (IXFK)	TO-264AA (IXFK)	TO-264AA	TO-247AC
Product Status	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFK120N20P (IXYS)

The IXFK120N20P is an active product offering 120A continuous drain current at 200V, exceeding the IXFK90N20 specification by 33%. It maintains identical voltage rating and package type (TO-264AA), enabling direct mechanical and electrical substitution. The part features lower gate charge (152 nC vs. 380 nC), reducing switching losses. Operating temperature range remains -55°C to 150°C. This substitute is suitable for applications requiring higher current capacity within the same thermal and voltage envelope. ROHS3 compliance and unlimited moisture sensitivity level match the original part.

IXFK170N20T (IXYS)

The IXFK170N20T is an active HiPerFET™ Trench technology device rated for 170A continuous drain current at 200V, representing an 89% increase over the IXFK90N20. The TO-264AA package maintains mechanical compatibility. This part delivers significantly improved on-state resistance (11 mOhm vs. 23 mOhm), resulting in lower conduction losses. Operating temperature extends to 175°C, providing enhanced thermal margin. Power dissipation capability reaches 1150W. Gate charge is 265 nC, lower than the original part. This substitute is appropriate for high-efficiency applications or designs requiring reduced thermal management complexity. ROHS3 compliance is maintained.

IXFK170N25X3 (IXYS)

The IXFK170N25X3 is an active Ultra X3 technology device with 250V drain-to-source voltage and 170A continuous drain current. While the voltage rating exceeds the IXFK90N20 specification, this part is electrically compatible in 200V applications and provides additional voltage margin. The TO-264AA package ensures mechanical compatibility. This device exhibits the lowest on-state resistance (7.4 mOhm) among all substitutes, minimizing conduction losses. Gate charge is 190 nC. Operating temperature range is -55°C to 150°C. This substitute is suitable for applications where voltage headroom and efficiency optimization are priorities. ROHS3 compliance is confirmed.

IRFP90N20DPBF (Infineon Technologies)

The IRFP90N20DPBF is an active HEXFET® device from Infineon Technologies rated for 94A continuous drain current at 200V, closely matching the IXFK90N20 current specification. The package type is TO-247AC, which differs from the TO-264AA of the original part. This substitute requires PCB layout modification and may not fit existing through-hole footprints without adapter considerations. The device features 23 mOhm on-state resistance, identical to the original part. Operating temperature extends to 175°C. Gate charge is 270 nC. Vgs(th) is 5V at 250µA. This substitute is appropriate when cross-manufacturer sourcing is required and PCB redesign is feasible. ROHS3 compliance and unlimited moisture sensitivity level are maintained.

Frequently Asked Questions (FAQ)

Q: Can the IXFK120N20P directly replace the IXFK90N20 without circuit modification?

A: Yes. The IXFK120N20P maintains identical voltage rating (200V), package type (TO-264AA), gate drive voltage (10V), and operating temperature range (-55°C to 150°C). The higher current rating (120A vs. 90A) and lower gate charge provide performance benefits without requiring circuit changes. Thermal design should account for the improved efficiency characteristics.

Q: What is the primary advantage of the IXFK170N20T over the IXFK90N20?

A: The IXFK170N20T provides 89% higher continuous drain current (170A vs. 90A) and significantly lower on-state resistance (11 mOhm vs. 23 mOhm). This results in reduced conduction losses and improved thermal performance. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin. Package compatibility (TO-264AA) enables direct substitution.

Q: Why does the IXFK170N25X3 have a higher voltage rating (250V) than the IXFK90N20 (200V)?

A: The IXFK170N25X3 is rated for 250V drain-to-source voltage, which exceeds the IXFK90N20 specification of 200V. This higher voltage rating provides additional electrical margin and does not prevent use in 200V applications. The device remains fully compatible with 200V circuit designs. The higher voltage rating reflects the Ultra X3 technology platform used in this device.

Q: Is the IRFP90N20DPBF a pin-compatible replacement for the IXFK90N20?

A: No. While both devices are N-Channel MOSFETs rated for 200V and approximately 90A, the IRFP90N20DPBF uses TO-247AC packaging, whereas the IXFK90N20 uses TO-264AA packaging. These packages have different pin configurations and footprints. PCB layout modification is required for substitution. The three-pin configuration is identical (Gate, Drain, Source), but physical placement differs.

Q: Which substitute part offers the lowest on-state resistance?

A: The IXFK170N25X3 offers the lowest on-state resistance at 7.4 mOhm (measured at 85A, 10V gate voltage). This represents a 68% reduction compared to the IXFK90N20 (23 mOhm at 45A, 10V). Lower on-state resistance reduces conduction losses and heat generation in high-current applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed—IXFK120N20P, IXFK170N20T, IXFK170N25X3, and IRFP90N20DPBF—are ROHS3 compliant. All parts maintain unlimited moisture sensitivity level (MSL 1). Compliance certifications match the original IXFK90N20 device.

Q: What is the significance of the IXFK90N20 being classified as "Not For New Designs"?

A: This classification indicates the IXFK90N20 has reached end-of-life status and is no longer recommended for new product development. Existing inventory remains available, but long-term supply cannot be guaranteed. Substituting with active products (IXFK120N20P, IXFK170N20T, IXFK170N25X3, or IRFP90N20DPBF) ensures design continuity and future component availability.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IXFK120N20P (152 nC) and IXFK170N25X3 (190 nC) offer significantly lower gate charge than the IXFK90N20 (380 nC), improving efficiency in high-frequency switching applications. The IRFP90N20DPBF (270 nC) provides moderate improvement.

Q: Can the IXFK170N25X3 be used in applications designed for 200V operation?

A: Yes. The IXFK170N25X3 is rated for 250V drain-to-source voltage, which exceeds the 200V requirement. Using a device with higher voltage rating in a lower-voltage application is electrically safe and provides additional voltage margin. No circuit modification is required. The device operates within its specified electrical parameters at 200V.

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