IXFK80N20Q Equivalent & Substitute Parts

Part Overview

The IXFK80N20Q is an N-Channel MOSFET rated for 200V drain-to-source voltage with 80A continuous drain current in a Through Hole TO-264AA package. This device is part of the IXYS HiPerFET™ series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts with compatible electrical and mechanical characteristics are necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	80	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	28 mOhm @ 500 mA, 10V	—
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-264AA	—

Substitute Part Grouping Explanation

Substitution of the IXFK80N20Q is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel (must match)
Continuous Drain Current (Id): 80A (must match)
Mounting Type: Through Hole (must match)
Package: TO-264AA (must match)
Operating Temperature Range: -55°C to 150°C (must match or exceed)

Allowable Parameter Variations:

Drain to Source Voltage (Vdss): May be equal to or greater than 200V
Drive Voltage: Must support 10V operation
Rds On: May vary based on voltage rating trade-offs
Power Dissipation: May be equal to or greater than 360W

The IXFK80N50Q3 qualifies as a substitute because it maintains identical FET type, drain current, mounting type, and package specifications while offering higher voltage and power ratings. The increased Vdss (500V vs. 200V) and power dissipation (1250W vs. 360W) provide enhanced capability for applications requiring higher voltage operation.

Parameter Comparison

Parameter	IXFK80N20Q (Main)	IXFK80N50Q3 (Substitute)	Unit
Manufacturer	IXYS	IXYS	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	200	500	V
Continuous Drain Current (Id) @ 25°C	80	80	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	28 mOhm @ 500 mA, 10V	65 mOhm @ 40A, 10V	—
Gate Charge (Qg) (Max) @ Vgs	180	200	nC @ 10V
Vgs (Max)	±20	±30	V
Input Capacitance (Ciss) (Max) @ Vds	4600	10000	pF @ 25V
Power Dissipation (Max)	360	1250	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	—
Package	TO-264AA	TO-264AA	—
Series	HiPerFET™	HiPerFET™, Q3 Class	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

IXFK80N50Q3 as Primary Substitute:

The IXFK80N50Q3 is the qualified substitute for the IXFK80N20Q based on the following engineering factors:

Product Status: The IXFK80N50Q3 is Active, ensuring long-term availability and supply chain continuity, whereas the IXFK80N20Q is Obsolete.
Compliance & Certifications: The IXFK80N50Q3 carries RoHS3 compliance and REACH Unaffected status, meeting current regulatory requirements for electronic components.
Electrical Compatibility: Both devices share identical FET type (N-Channel), continuous drain current (80A), and drive voltage (10V). The higher voltage rating (500V vs. 200V) of the substitute is compatible with applications designed for 200V operation.
Mechanical Compatibility: Both devices use identical Through Hole mounting and TO-264AA packaging, ensuring direct physical compatibility without PCB redesign.
Thermal Performance: Both devices operate across the same temperature range (-55°C to 150°C), maintaining thermal design margins.

Selection of the IXFK80N50Q3 is appropriate for applications where the original IXFK80N20Q is no longer procurable. Circuit designs operating at or below 200V will function correctly with the higher-rated substitute.

Frequently Asked Questions (FAQ)

Q: Can the IXFK80N50Q3 directly replace the IXFK80N20Q in existing designs?

A: Yes. Both devices are N-Channel MOSFETs with 80A continuous drain current in TO-264AA packages. The IXFK80N50Q3 has a higher voltage rating (500V vs. 200V), which is compatible with applications designed for 200V operation. No circuit modifications are required for voltage compatibility.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Drain-to-Source Voltage: IXFK80N20Q is rated for 200V, while IXFK80N50Q3 is rated for 500V; (2) Rds On: IXFK80N20Q has 28 mOhm (at 500 mA), while IXFK80N50Q3 has 65 mOhm (at 40A); (3) Power Dissipation: IXFK80N20Q is rated for 360W, while IXFK80N50Q3 is rated for 1250W; (4) Product Status: IXFK80N20Q is Obsolete, while IXFK80N50Q3 is Active.

Q: Are there any package or mounting differences?

A: No. Both devices use identical Through Hole mounting and TO-264AA packaging. Pin configuration and PCB footprint are identical, allowing direct physical substitution without layout changes.

Q: Why is the Rds On higher on the IXFK80N50Q3?

A: The higher on-resistance is a characteristic trade-off of the higher voltage rating. The IXFK80N50Q3 is designed for 500V operation, which inherently results in higher channel resistance compared to the 200V-rated IXFK80N20Q. This is a normal engineering trade-off in MOSFET design.

Q: What is the significance of the Q3 Class designation on the IXFK80N50Q3?

A: The Q3 Class designation indicates the device meets specific quality and reliability standards within the IXYS product line. This classification is part of the device's product specification and does not affect substitution compatibility.

Q: Can I use the IXFK80N50Q3 in a 500V application if the original design used the IXFK80N20Q?

A: The IXFK80N50Q3 is rated for 500V operation and can be used in applications requiring up to 500V. However, circuit design validation is required to ensure all other components and the overall system design are rated for 500V operation.

Q: What is the inventory status of these parts?

A: The IXFK80N20Q has 722 pieces in stock (Obsolete status). The IXFK80N50Q3 has 888 pieces in stock (Active status). For new designs or long-term production, the IXFK80N50Q3 is recommended due to its Active status and higher availability assurance.

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