IXFK80N20 Equivalent & Substitute Parts

Part Overview

The IXFK80N20 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 80A continuous drain current at 25°C. This device is manufactured by IXYS and packaged in a TO-264AA through-hole configuration. The part operates within the HiPerFET™ series and is classified as obsolete. Due to its obsolete status, identifying equivalent substitute components is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

IXFK80N20

IXYSIn Stock: 646IXFK80N20 Datasheet

Current PartRFQ

IXTK90N25L2

IXYSIn Stock: 1803IXTK90N25L2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFK80N20 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 200V
• Continuous Drain Current (Id): Substitute must equal or exceed 80A at 25°C
• Gate Charge (Qg): Lower values reduce switching losses; higher values are acceptable within thermal constraints
• Rds On: Lower on-resistance improves efficiency; higher values are acceptable if thermal limits are not exceeded
• Power Dissipation: Substitute must support the thermal requirements of the application

Mechanical Compatibility Criteria:

• Mounting Type: Through-hole configuration required
• Package: TO-264 series packages (TO-264AA, TO-264-3) ensure pin compatibility and thermal performance

The IXTK90N25L2 meets these substitution criteria with higher voltage rating (250V), higher current capability (90A), and superior power dissipation (960W), while maintaining N-Channel topology, through-hole mounting, and compatible TO-264 packaging.

Parameter Comparison

Engineering Selection Recommendations

The IXTK90N25L2 is a qualified substitute for the IXFK80N20 based on the following engineering factors:

Product Status: The IXFK80N20 is classified as obsolete, while the IXTK90N25L2 is active. Active product status ensures continued availability, manufacturing support, and compliance with current industry standards.

Electrical Performance: The IXTK90N25L2 exceeds the minimum electrical requirements of the IXFK80N20 across all critical parameters. The higher Vdss rating (250V vs. 200V) provides additional voltage margin. The higher continuous drain current (90A vs. 80A) and power dissipation capability (960W vs. 360W) support the same or higher power applications.

Compliance and Certifications: The IXTK90N25L2 carries RoHS3 compliance and REACH unaffected status, meeting current regulatory requirements. Both devices share the same ECCN and HTSUS classifications.

Mechanical Compatibility: Both devices utilize through-hole mounting in TO-264 series packaging, ensuring direct physical compatibility in existing PCB layouts and thermal management designs.

Thermal Considerations: The IXTK90N25L2 provides significantly higher power dissipation capability (960W vs. 360W), allowing for improved thermal performance in applications operating at or near the thermal limits of the original IXFK80N20.

Frequently Asked Questions (FAQ)

Q: Can the IXTK90N25L2 directly replace the IXFK80N20 in existing designs?

A: Yes. Both devices are N-Channel MOSFETs with through-hole TO-264 packaging. The IXTK90N25L2 meets or exceeds all electrical specifications of the IXFK80N20, including voltage rating, current capability, and thermal performance. Pin compatibility is maintained within the TO-264 family.

Q: What are the key differences between these two parts?

A: The IXTK90N25L2 provides higher Vdss (250V vs. 200V), higher continuous drain current (90A vs. 80A), higher power dissipation (960W vs. 360W), and higher gate charge (640nC vs. 280nC). The IXTK90N25L2 is an active product, while the IXFK80N20 is obsolete.

Q: Does the higher gate charge of the IXTK90N25L2 affect circuit performance?

A: Gate charge affects switching speed and driver requirements. The IXTK90N25L2 has higher gate charge (640nC vs. 280nC), which may require evaluation of gate driver capability in high-frequency switching applications. Circuit simulation or testing is necessary to confirm performance in specific applications.

Q: Are the packages physically identical?

A: Both devices use TO-264 series through-hole packaging. The IXFK80N20 is specified as TO-264AA, and the IXTK90N25L2 is specified as TO-264. These designations refer to the same physical package family with compatible pin configurations and thermal characteristics.

Q: What is the inventory status of these parts?

A: The IXFK80N20 has 635 pieces in stock (new original). The IXTK90N25L2 has 1771 pieces in stock (new original, tube packaging). The IXTK90N25L2 offers superior availability due to its active product status.

Q: Are there any compliance or regulatory differences?

A: The IXTK90N25L2 is RoHS3 compliant and REACH unaffected. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The IXTK90N25L2 meets current regulatory requirements for new designs.