IXFK74N50P2 Equivalent & Substitute Parts

Part Overview

The IXFK74N50P2 is an N-Channel MOSFET rated for 500V drain-to-source voltage with a continuous drain current of 74A at 25°C. This device is manufactured by IXYS and packaged in a TO-264AA through-hole configuration. The part operates within the HiPerFET™ and PolarP2™ series and is classified as obsolete. Due to its obsolete status, identifying equivalent substitute parts with compatible electrical and mechanical specifications is necessary for design continuity and procurement planning.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	74	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ 500mA, 10V	77	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	5	V
Gate Charge (Qg) @ 10V	165	nC
Input Capacitance (Ciss) @ 25V	9900	pF
Power Dissipation (Max)	1400	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-264AA	Through Hole
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the IXFK74N50P2 is determined by strict equivalence across the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide MOSFET
Operating Temperature Range: Must support -55°C to 150°C
Gate Voltage Rating (Vgs Max): Must support ±30V

Mechanical Compatibility Requirements:

Package Type: Must be TO-264AA through-hole configuration
Mounting Type: Must be through-hole

Regulatory Compliance Requirements:

RoHS Status: Must be ROHS3 Compliant
REACH Status: Must be REACH Unaffected

The IXFK94N50P2 meets all mandatory substitution criteria. While it exhibits differences in continuous drain current (94A vs. 74A), on-state resistance (55mOhm vs. 77mOhm), gate charge (220nC vs. 165nC), and input capacitance (13700pF vs. 9900pF), these represent performance enhancements rather than incompatibilities. The substitute part maintains identical voltage ratings, package configuration, and regulatory compliance.

Parameter Comparison

Parameter	IXFK74N50P2	IXFK94N50P2	Unit
Manufacturer	IXYS	IXYS	-
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	500	500	V
Continuous Drain Current (Id) @ 25°C	74	94	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ 500mA, 10V	77	55	mOhm
Gate Threshold Voltage (Vgs(th))	5 @ 4mA	5 @ 8mA	V
Gate Charge (Qg) @ 10V	165	220	nC
Vgs (Max)	±30	±30	V
Input Capacitance (Ciss) @ 25V	9900	13700	pF
Power Dissipation (Max)	1400	1300	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-264AA	TO-264AA	-
Mounting Type	Through Hole	Through Hole	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
REACH Status	REACH Unaffected	REACH Unaffected	-
Product Status	Obsolete	Active	-

Engineering Selection Recommendations

The IXFK94N50P2 is a direct substitute for the IXFK74N50P2 based on electrical and mechanical compatibility. The substitute part is classified as active, ensuring ongoing availability and supply chain continuity compared to the obsolete status of the original part.

Both devices maintain identical voltage ratings (500V Vdss), identical gate voltage specifications (±30V Vgs Max), and identical operating temperature ranges (-55°C to 150°C). Both are packaged in TO-264AA through-hole configuration and comply with ROHS3 and REACH requirements.

The IXFK94N50P2 provides enhanced performance characteristics: higher continuous drain current (94A vs. 74A), lower on-state resistance (55mOhm vs. 77mOhm), and equivalent power dissipation capability (1300W vs. 1400W). These characteristics make the substitute part suitable for applications requiring the original specification or higher current capacity within the same voltage and thermal envelope.

Frequently Asked Questions (FAQ)

Q: Can the IXFK94N50P2 directly replace the IXFK74N50P2 in existing designs?

A: Yes. Both devices share identical voltage ratings (500V Vdss), gate voltage specifications (±30V Vgs Max), operating temperature range (-55°C to 150°C), and TO-264AA through-hole package configuration. The substitute part meets all mandatory electrical and mechanical compatibility criteria.

Q: What are the key differences between these two parts?

A: The IXFK94N50P2 provides higher continuous drain current (94A vs. 74A) and lower on-state resistance (55mOhm vs. 77mOhm). Gate charge is higher (220nC vs. 165nC) and input capacitance is higher (13700pF vs. 9900pF). Power dissipation rating is slightly lower (1300W vs. 1400W). These differences represent performance enhancements in current handling and switching characteristics.

Q: Are both parts available in the same package?

A: Yes. Both the IXFK74N50P2 and IXFK94N50P2 are packaged in TO-264AA through-hole configuration, ensuring identical PCB footprint and mounting compatibility.

Q: What is the significance of the product status difference?

A: The IXFK74N50P2 is classified as obsolete, while the IXFK94N50P2 is active. Active status indicates ongoing manufacturing and availability from the supplier, making the IXFK94N50P2 the preferred choice for new designs and procurement.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both the IXFK74N50P2 and IXFK94N50P2 are ROHS3 Compliant and REACH Unaffected, meeting identical regulatory standards.

Q: Will the higher gate charge of the IXFK94N50P2 affect circuit design?

A: Gate charge differences (220nC vs. 165nC) may require evaluation of gate driver capability and switching speed characteristics in the specific application circuit. The higher gate charge indicates increased switching energy requirements but does not prevent substitution in circuits designed for the original part.

Q: Is the lower power dissipation rating of the IXFK94N50P2 a concern?

A: The IXFK94N50P2 power dissipation rating (1300W) is lower than the IXFK74N50P2 (1400W). However, the lower on-state resistance (55mOhm vs. 77mOhm) and higher current rating (94A vs. 74A) of the substitute part typically result in lower actual power dissipation in typical operating conditions. Application-specific thermal analysis is necessary to confirm suitability.

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