IXFK60N25Q Equivalent & Substitute Parts

Part Overview

The IXFK60N25Q is an N-Channel MOSFET manufactured by IXYS, rated for 250V drain-to-source voltage and 60A continuous drain current in a Through Hole TO-264AA package. This device is part of the HiPerFET™ series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts with compatible electrical and mechanical parameters are necessary for design continuity and procurement alternatives.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	250	V
Current - Continuous Drain (Id) @ 25°C	60	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	47	mOhm @ 500mA, 10V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-264-3, TO-264AA	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IXFK60N25Q is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel (required for circuit topology compatibility)
Mounting Type: Through Hole (required for PCB assembly compatibility)
Package / Case: TO-264-3 or TO-264AA (required for mechanical fit)
Operating Temperature Range: -55°C to 150°C (required for thermal environment compatibility)

Electrical Performance Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 250V
Current - Continuous Drain (Id): Must equal or exceed 60A
Drive Voltage: 10V standard gate drive
Power Dissipation: Must support thermal requirements of the application

The substitute parts FDL100N50F and FQL40N50F meet the mandatory mechanical and thermal compatibility criteria. Both devices feature N-Channel topology, Through Hole mounting, TO-264-3 package compatibility, and identical operating temperature range. Both exceed the voltage and current ratings of the IXFK60N25Q, providing design margin for higher-performance applications.

Parameter Comparison

Parameter	IXFK60N25Q	FDL100N50F	FQL40N50F	Unit
Manufacturer	IXYS	onsemi	onsemi	—
FET Type	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	250	500	500	V
Current - Continuous Drain (Id) @ 25°C	60	100	40	A (Tc)
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	47 @ 500mA, 10V	55 @ 50A, 10V	110 @ 20A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 4mA	5 @ 250µA	5 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	180 @ 10V	238 @ 10V	200 @ 10V	nC
Vgs (Max)	±20	±30	±30	V
Input Capacitance (Ciss) (Max) @ Vds	5100 @ 25V	12000 @ 25V	7500 @ 25V	pF
Power Dissipation (Max)	360	2500	460	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	—
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-264-3, TO-264AA	—
Product Status	Obsolete	Active	Obsolete	—
Series	HiPerFET™	UniFET™	FRFET®	—

Engineering Selection Recommendations

FDL100N50F (onsemi UniFET™): This substitute is classified as Active product status, ensuring long-term availability and supply chain continuity. The FDL100N50F provides superior electrical performance with 100A continuous drain current and 500V Vdss rating, exceeding the IXFK60N25Q specifications. The device is RoHS3 Compliant and REACH Unaffected, meeting modern regulatory requirements. The higher power dissipation rating (2500W) accommodates demanding thermal environments. This part is suitable for applications requiring enhanced performance margins and regulatory compliance.

FQL40N50F (onsemi FRFET®): This substitute is classified as Obsolete product status, similar to the IXFK60N25Q. The FQL40N50F is RoHS3 Compliant and REACH Unaffected. The device provides 40A continuous drain current and 500V Vdss rating. While the current rating is lower than the IXFK60N25Q, the higher voltage rating provides design flexibility. This part is suitable for applications where the 40A current rating is sufficient and where voltage margin is required.

Both substitutes maintain mechanical compatibility through identical Through Hole mounting and TO-264-3/TO-264AA package specifications. Both operate across the same temperature range (-55°C to 150°C). Selection between FDL100N50F and FQL40N50F depends on application current requirements and the priority of product status (Active vs. Obsolete).

Frequently Asked Questions (FAQ)

Q: Can the FDL100N50F directly replace the IXFK60N25Q in existing designs?

A: The FDL100N50F is mechanically and thermally compatible with the IXFK60N25Q due to identical Through Hole mounting, TO-264-3/TO-264AA package compatibility, and matching operating temperature range. The electrical parameters of the FDL100N50F (100A, 500V) exceed the IXFK60N25Q requirements (60A, 250V), providing design margin. Gate drive voltage is identical at 10V. Verification of circuit-specific parameters such as gate charge, input capacitance, and threshold voltage is required for gate driver compatibility.

Q: What is the difference between the FDL100N50F and FQL40N50F substitutes?

A: The primary differences are product status and current rating. The FDL100N50F is Active status with 100A continuous drain current, while the FQL40N50F is Obsolete status with 40A continuous drain current. Both share 500V Vdss rating, 10V drive voltage, Through Hole mounting, and TO-264-3/TO-264AA package compatibility. The FDL100N50F is recommended for new designs requiring long-term availability. The FQL40N50F is suitable for applications where 40A current is sufficient.

Q: Are the substitute parts pin-compatible with the IXFK60N25Q?

A: Yes. Both FDL100N50F and FQL40N50F use the TO-264-3 package, which is mechanically and electrically compatible with the TO-264AA package of the IXFK60N25Q. Pin configuration and spacing are identical, allowing direct PCB mounting without layout modification.

Q: What are the regulatory compliance differences between the IXFK60N25Q and its substitutes?

A: The IXFK60N25Q is classified as Obsolete with no RoHS or REACH status specified. The FDL100N50F is Active status, RoHS3 Compliant, and REACH Unaffected. The FQL40N50F is Obsolete status, RoHS3 Compliant, and REACH Unaffected. For applications requiring RoHS3 compliance, the FDL100N50F is the preferred substitute.

Q: How do gate charge and input capacitance differences affect circuit design?

A: The IXFK60N25Q has gate charge of 180 nC and input capacitance of 5100 pF. The FDL100N50F has 238 nC gate charge and 12000 pF input capacitance. The FQL40N50F has 200 nC gate charge and 7500 pF input capacitance. Higher gate charge and capacitance require increased gate driver current capability and may affect switching speed. Gate driver selection and circuit timing must be verified for each substitute.

Q: What is the impact of higher Vdss ratings on circuit design?

A: Both substitutes feature 500V Vdss compared to the IXFK60N25Q at 250V. Higher voltage rating provides design margin for transient overvoltage conditions and allows operation in higher-voltage applications. No circuit modification is required; the higher rating is a superset of the original specification.

Q: Can the FQL40N50F be used if the application requires 60A continuous current?

A: No. The FQL40N50F is rated for 40A continuous drain current, which is below the IXFK60N25Q requirement of 60A. Using the FQL40N50F in a 60A application would exceed device ratings and cause thermal stress and potential failure. The FDL100N50F, rated for 100A, is the appropriate substitute for applications requiring 60A or higher current.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message