IXFK44N80P N-Channel 800V 44A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK44N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 44A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-264AA through-hole package. The part is currently in active production status with 1307 units in stock.

Equivalent and substitute parts are identified when they share the same or compatible electrical ratings, mechanical package specifications, and operational characteristics. Substitutes enable design flexibility, support supply chain continuity, and provide alternative sourcing options for applications requiring high-voltage N-Channel MOSFETs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	44	A
On-State Resistance (Rds On Max) @ 22A, 10V	190	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 8mA	5	V
Gate Charge (Qg Max) @ 10V	198	nC
Power Dissipation (Max)	1040	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-264AA	Through Hole
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the IXFK44N80P is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
Continuous Drain Current (Id): Must equal or exceed 44A at 25°C
On-State Resistance (Rds On): Must be within acceptable operating limits for the application
Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry
Operating Temperature Range: Must support -55°C to 150°C operation
FET Type: Must be N-Channel MOSFET technology

Mechanical Compatibility Criteria:

Package Type: TO-264AA or equivalent TO-264 through-hole configuration
Mounting: Through-hole compatibility
Pin configuration: TO-264-3 standard

Regulatory & Compliance Criteria:

RoHS3 Compliance
REACH Unaffected status
Moisture Sensitivity Level (MSL): 1 (Unlimited)

The APT48M80L from Microchip Technology meets all substitution criteria with equivalent or superior electrical ratings and identical package specifications.

Parameter Comparison

Parameter	IXFK44N80P (Main Part)	APT48M80L (Substitute)	Unit
Manufacturer	IXYS	Microchip Technology	-
Drain-to-Source Voltage (Vdss)	800	800	V
Continuous Drain Current (Id) @ 25°C	44	49	A
Rds On (Max) @ Vgs 10V	190 @ 22A	200 @ 24A	mOhm
Gate Threshold Voltage (Vgs(th) Max)	5 @ 8mA	5 @ 2.5mA	V
Gate Charge (Qg Max) @ 10V	198	305	nC
Input Capacitance (Ciss Max) @ 25V	12000	9330	pF
Power Dissipation (Max)	1040	1135	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-264AA	TO-264 [L]	-
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
REACH Status	REACH Unaffected	REACH Unaffected	-
MSL Rating	1 (Unlimited)	1 (Unlimited)	-

Engineering Selection Recommendations

IXFK44N80P Selection:

Primary choice when IXYS HiPerFET™ series performance is specified
Active production status with established supply availability (1307 units in stock)
ROHS3 compliant and REACH unaffected
Suitable for applications requiring 44A continuous drain current at 800V

APT48M80L Selection:

Suitable substitute when supply of IXFK44N80P is constrained
Provides higher continuous drain current rating (49A vs. 44A)
Higher power dissipation capability (1135W vs. 1040W)
Active production status with strong inventory availability (1700 units in stock)
ROHS3 compliant and REACH unaffected
TO-264 [L] package maintains mechanical compatibility with TO-264AA footprint

Both parts meet identical regulatory and compliance requirements. Selection between these devices is based on availability, supply chain strategy, and application-specific current and power dissipation requirements.

Frequently Asked Questions (FAQ)

Q: Can the APT48M80L directly replace the IXFK44N80P in existing designs?

A: Yes. Both devices share identical drain-to-source voltage (800V), compatible gate threshold voltage (5V), identical operating temperature range (-55°C to 150°C), and equivalent TO-264 through-hole package configurations. The APT48M80L provides higher current and power ratings, making it suitable for the same applications.

Q: What are the key differences between these two MOSFETs?

A: The APT48M80L has a higher continuous drain current (49A vs. 44A), higher power dissipation rating (1135W vs. 1040W), lower input capacitance (9330 pF vs. 12000 pF), and higher gate charge (305 nC vs. 198 nC). On-state resistance is comparable (200 mOhm vs. 190 mOhm).

Q: Are the package dimensions identical between TO-264AA and TO-264 [L]?

A: Both packages are TO-264-3 through-hole configurations. The TO-264 [L] designation indicates a variant within the TO-264 family. Physical footprint compatibility is maintained for PCB mounting.

Q: Do both parts meet RoHS and REACH requirements?

A: Yes. Both the IXFK44N80P and APT48M80L are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards.

Q: Which part should be selected for new designs?

A: Selection depends on supply availability and application requirements. For applications requiring exactly 44A continuous current, either part is suitable. For applications with higher current demands or thermal considerations, the APT48M80L offers superior ratings. Consult current inventory and lead time data for procurement decisions.

Q: What is the moisture sensitivity level for both parts?

A: Both devices have MSL rating 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

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