IXFK44N60 N-Channel 600V 44A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK44N60 is an N-Channel 600V 44A through-hole MOSFET manufactured by IXYS in the HiPerFET™ series. This device is rated for 560W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFK44N60
IXYSIn Stock: 2804IXFK44N60 Datasheet
IXFK44N60
Current Part
IXFK64N60P
IXYSIn Stock: 800470IXFK64N60P Datasheet
IXFK64N60P
Direct
FQL40N50F
onsemiIn Stock: 18775FQL40N50F Datasheet
FQL40N50F
Similar
IPW60R099CPAFKSA1
Infineon TechnologiesIn Stock: 989IPW60R099CPAFKSA1 Datasheet
IPW60R099CPAFKSA1
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 44 A
On-State Resistance (Rds On) @ 22A, 10V 130 mOhm
Gate Threshold Voltage (Vgs(th)) @ 8mA 4.5 V
Gate Charge (Qg) @ 10V 330 nC
Input Capacitance (Ciss) @ 25V 8900 pF
Maximum Power Dissipation (Tc) 560 W
Operating Temperature Range -55 to 150 °C
Package Type TO-264AA Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IXFK44N60 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain the 600V drain-to-source voltage rating or higher to ensure safe operation in the original circuit topology.

Current Handling Capacity: Substitute parts must support continuous drain current ratings at or above 44A at 25°C to maintain equivalent or superior current delivery capability.

On-State Resistance (Rds On): The on-state resistance directly affects power dissipation and thermal performance. Substitute parts with lower Rds On values provide improved efficiency and reduced heat generation.

Package and Mounting: All substitute parts must use through-hole mounting in compatible packages (TO-264AA or TO-264-3) to ensure mechanical fit and thermal interface compatibility.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with comparable or lower values maintain circuit timing and driver compatibility.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating range to ensure reliability across all environmental conditions.

Product Status and Compliance: Active product status and RoHS3 compliance are prioritized to ensure long-term availability and regulatory adherence.

Parameter Comparison

Parameter IXFK44N60 IXFK64N60P FQL40N50F IPW60R099CPAFKSA1
Manufacturer IXYS IXYS onsemi Infineon Technologies
Drain to Source Voltage (Vdss) 600V 600V 500V 600V
Continuous Drain Current (Id) @ 25°C 44A 64A 40A 31A
Rds On (Max) @ 10V 130 mOhm @ 22A 96 mOhm @ 500mA 110 mOhm @ 20A 105 mOhm @ 18A
Gate Threshold Voltage (Vgs(th)) 4.5V @ 8mA 5V @ 8mA 5V @ 250µA 3.5V @ 1.2mA
Gate Charge (Qg) @ 10V 330 nC 200 nC 200 nC 80 nC
Input Capacitance (Ciss) @ 25V 8900 pF 12000 pF 7500 pF 2800 pF @ 100V
Maximum Power Dissipation (Tc) 560W 1040W 460W 255W
Operating Temperature Range -55 to 150°C -55 to 150°C -55 to 150°C -40 to 150°C
Package Type TO-264AA TO-264AA TO-264-3 TO-247-3
Product Status Obsolete Active Obsolete Active
RoHS3 Compliance Yes Yes Yes Yes

Engineering Selection Recommendations

IXFK64N60P (Direct Equivalent - Recommended Primary Substitute)

The IXFK64N60P is the preferred direct substitute for the IXFK44N60. Both devices are manufactured by IXYS within the HiPerFET™ series and share identical voltage ratings (600V) and package type (TO-264AA). The IXFK64N60P provides superior performance with 64A continuous drain current (versus 44A), lower on-state resistance (96 mOhm versus 130 mOhm), and significantly higher power dissipation capability (1040W versus 560W). The device maintains full compatibility with the original circuit topology while offering enhanced thermal performance and current handling. The IXFK64N60P is currently in active production status with extensive inventory availability, ensuring long-term supply continuity. RoHS3 compliance and REACH unaffected status confirm regulatory alignment.

IPW60R099CPAFKSA1 (Alternative Substitute - Limited Current Applications)

The IPW60R099CPAFKSA1 from Infineon Technologies is an active alternative for applications where the 600V voltage rating and through-hole mounting are required but continuous current demand does not exceed 31A. This device features the lowest gate charge (80 nC) and input capacitance (2800 pF) among all substitutes, resulting in superior switching performance and reduced gate drive power requirements. The CoolMOS™ technology provides excellent on-state resistance (105 mOhm). However, the lower current rating (31A) and reduced power dissipation capability (255W) restrict its use to lower-power circuit implementations. The package type is TO-247-3 rather than TO-264AA, requiring mechanical redesign of the mounting interface. Active product status, AEC-Q101 automotive qualification, and RoHS3 compliance support long-term availability and reliability. This substitute is suitable only for applications where the original 44A current requirement can be reduced.

FQL40N50F (Not Recommended for Direct Substitution)

The FQL40N50F from onsemi is classified as a similar part but is not recommended as a direct substitute due to critical parameter mismatches. The device features a reduced voltage rating (500V versus 600V), which violates the minimum voltage requirement for safe operation in 600V circuit topologies. Although the continuous drain current (40A) is comparable to the original part, the lower voltage rating creates unacceptable risk of device failure under normal operating conditions. The part is also classified as obsolete, eliminating long-term supply assurance. This device should be considered only in applications where the circuit topology has been redesigned to operate at 500V or lower voltage levels.

Frequently Asked Questions (FAQ)

Q: Can the IXFK64N60P be used as a direct replacement for the IXFK44N60 without circuit modifications?

A: Yes. The IXFK64N60P is a direct substitute with identical voltage rating (600V), package type (TO-264AA), and operating temperature range (-55°C to 150°C). The higher current rating (64A versus 44A) and lower on-state resistance (96 mOhm versus 130 mOhm) provide improved performance without requiring circuit redesign. Gate drive voltage requirements remain compatible at 10V.

Q: What is the primary advantage of the IXFK64N60P over the original IXFK44N60?

A: The IXFK64N60P offers superior thermal performance through lower on-state resistance (96 mOhm versus 130 mOhm) and higher power dissipation capability (1040W versus 560W). These characteristics reduce junction temperature rise and improve overall circuit efficiency. Additionally, the IXFK64N60P is in active production status, ensuring long-term availability compared to the obsolete IXFK44N60.

Q: Why is the IPW60R099CPAFKSA1 not recommended as a primary substitute?

A: The IPW60R099CPAFKSA1 has a lower continuous drain current rating (31A versus 44A) and reduced power dissipation capability (255W versus 560W). These limitations restrict its use to applications with reduced current demands. Additionally, the package type is TO-247-3 rather than TO-264AA, requiring mechanical redesign of the mounting interface and thermal management system.

Q: Can the FQL40N50F be used in place of the IXFK44N60?

A: No. The FQL40N50F has a reduced voltage rating (500V versus 600V), which is incompatible with circuits designed for 600V operation. Using this device in a 600V circuit creates unacceptable risk of device failure. The part is also obsolete, eliminating supply continuity. This device is suitable only for applications redesigned to operate at 500V or lower.

Q: What are the key electrical parameters that determine substitution compatibility?

A: The critical parameters are drain-to-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), gate threshold voltage (Vgs(th)), and operating temperature range. All substitute parts must meet or exceed the original specifications for these parameters. Additionally, package type and mounting method must be compatible with the original circuit layout.

Q: Does the IXFK64N60P require different gate drive circuitry than the IXFK44N60?

A: No. Both devices operate with identical gate drive voltage (10V) and have comparable gate threshold voltages (5V for IXFK64N60P versus 4.5V for IXFK44N60). However, the IXFK64N60P has lower gate charge (200 nC versus 330 nC), which reduces gate drive power requirements and may improve switching speed.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFK64N60P, FQL40N50F, and IPW60R099CPAFKSA1 are all RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and use.

Q: What is the operating temperature range compatibility for substitutes?

A: The IXFK64N60P and FQL40N50F support the full -55°C to 150°C operating range of the original IXFK44N60. The IPW60R099CPAFKSA1 has a slightly reduced lower temperature limit (-40°C versus -55°C), which may be acceptable for applications not requiring operation below -40°C.

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