IXFK44N50F Equivalent & Substitute Parts

Part Overview

The IXFK44N50F is an N-Channel MOSFET rated for 500V drain-to-source voltage with a continuous drain current of 44A at 25°C. This device is packaged in a TO-264AA through-hole configuration and is part of the HiPerRF™ series. The IXFK44N50F is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	44	A (Tc)
Rds On (Max) @ Id, Vgs	120	mOhm @ 22A, 10V
Power Dissipation (Max)	500	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-264-3, TO-264AA	—

Substitute Part Grouping Explanation

The IXFK64N50Q3 qualifies as a direct substitute for the IXFK44N50F based on the following electrical and mechanical compatibility criteria:

Matching Parameters:

FET Type: Both are N-Channel MOSFETs
Drain to Source Voltage (Vdss): Both rated at 500V
Mounting Type: Both are through-hole configurations
Package / Case: Both use TO-264-3 and TO-264AA packaging
Operating Temperature Range: Both operate from -55°C to 150°C (TJ)
Drive Voltage: Both specified at 10V for maximum Rds On conditions

Enhanced Performance Characteristics: The IXFK64N50Q3 provides higher continuous drain current (64A versus 44A), lower on-resistance (85 mOhm versus 120 mOhm), and increased power dissipation capability (1000W versus 500W). These characteristics allow the substitute to handle equivalent or higher-demand applications within the same voltage and thermal operating envelope.

Parameter Comparison

Parameter	IXFK44N50F	IXFK64N50Q3	Unit
Manufacturer	IXYS-RF	IXYS	—
Product Status	Obsolete	Active	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	500	500	V
Current - Continuous Drain (Id) @ 25°C	44	64	A (Tc)
Rds On (Max) @ Id, Vgs	120 @ 22A, 10V	85 @ 32A, 10V	mOhm
Vgs(th) (Max) @ Id	5.5 @ 4mA	6.5 @ 4mA	V
Gate Charge (Qg) (Max) @ Vgs	156 @ 10V	145 @ 10V	nC
Vgs (Max)	±20	±30	V
Input Capacitance (Ciss) (Max) @ Vds	5500 @ 25V	6950 @ 25V	pF
Power Dissipation (Max)	500	1000	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
ECCN	EAR99	EAR99	—
HTSUS	8541.29.0095	8541.29.0095	—

Engineering Selection Recommendations

The IXFK64N50Q3 is the manufacturer-recommended substitute for the obsolete IXFK44N50F. Selection of the IXFK64N50Q3 is supported by the following factors:

Product Status: The IXFK44N50F is classified as obsolete, whereas the IXFK64N50Q3 maintains active product status, ensuring long-term availability and supply chain continuity.

Regulatory Compliance: Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The IXFK64N50Q3 carries RoHS3 compliance and REACH unaffected status, providing enhanced regulatory alignment for current procurement requirements.

Electrical Compatibility: The IXFK64N50Q3 maintains identical voltage ratings (500V Vdss) and operating temperature range (-55°C to 150°C TJ), ensuring direct functional compatibility in existing circuit designs. The substitute device provides superior performance margins through higher current capacity and lower on-resistance.

Mechanical Compatibility: Both devices utilize identical TO-264AA through-hole packaging, permitting direct board-level substitution without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the IXFK64N50Q3 directly replace the IXFK44N50F in existing designs?

A: Yes. Both devices share identical voltage ratings (500V Vdss), operating temperature range (-55°C to 150°C TJ), and TO-264AA packaging. The IXFK64N50Q3 provides enhanced performance through higher current capacity (64A versus 44A) and lower on-resistance (85 mOhm versus 120 mOhm), making it suitable for direct substitution in applications designed for the IXFK44N50F.

Q: What are the key electrical differences between these devices?

A: The IXFK64N50Q3 offers higher continuous drain current (64A versus 44A), lower maximum on-resistance (85 mOhm versus 120 mOhm), increased power dissipation capability (1000W versus 500W), and higher maximum gate voltage (±30V versus ±20V). Gate charge is slightly lower in the substitute (145 nC versus 156 nC), and input capacitance is higher (6950 pF versus 5500 pF).

Q: Are the packaging and mounting configurations identical?

A: Yes. Both the IXFK44N50F and IXFK64N50Q3 use TO-264-3 and TO-264AA through-hole packaging with identical pin configurations, allowing direct board-level substitution without PCB modifications.

Q: What is the product status difference, and why does it matter?

A: The IXFK44N50F is classified as obsolete, while the IXFK64N50Q3 is active. Active product status ensures ongoing manufacturing, availability, and technical support. Obsolete products face supply discontinuation and reduced vendor support.

Q: Are there regulatory or compliance differences?

A: Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The IXFK64N50Q3 carries RoHS3 compliance and REACH unaffected status, providing enhanced regulatory alignment for current procurement standards.

Q: Will the higher current rating of the IXFK64N50Q3 cause issues in applications designed for 44A?

A: No. The IXFK64N50Q3 is rated for higher current capacity but operates within the same voltage and thermal specifications. Applications designed for the IXFK44N50F will operate within the safe operating area of the substitute device.

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