IXFK36N60P N-Channel 600V 36A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK36N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage and 36A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-264AA through-hole package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, accounting for differences in package type, current rating, and thermal characteristics. Alternative devices may be required due to inventory constraints, application-specific thermal requirements, or package compatibility with existing PCB designs.

Substiute Parts

IXFK36N60P

IXYSIn Stock: 1117IXFK36N60P Datasheet

Current PartRFQ

FCH170N60

Fairchild SemiconductorIn Stock: 1380FCH170N60 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFK36N60P is determined by the following critical electrical parameters:

Voltage Rating Compatibility: The substitute device must maintain a Vdss rating of 600V or higher to ensure safe operation in the same circuit topology.

Current Handling Capability: The continuous drain current (Id) rating must be sufficient for the application. The IXFK36N60P is rated at 36A; substitute parts with lower current ratings require circuit re-evaluation for thermal and current distribution.

On-State Resistance (Rds On): This parameter directly affects power dissipation and switching losses. Substitute devices with comparable or lower Rds On values maintain equivalent or improved thermal performance.

Gate Charge (Qg) and Input Capacitance (Ciss): These parameters influence gate drive requirements and switching speed. Devices with similar or lower values ensure compatibility with existing gate drive circuits.

Package and Mounting Type: The IXFK36N60P uses TO-264AA through-hole packaging. Substitute parts may use alternative through-hole packages (such as TO-247) if PCB layout accommodates the different pin configuration and thermal footprint.

Operating Temperature Range: Both the main part and substitutes operate across -55°C to 150°C (TJ), ensuring thermal compatibility.

Compliance and Product Status: All identified substitutes maintain Active product status and RoHS3 compliance, ensuring long-term availability and regulatory alignment.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection (IXFK36N60P): The IXFK36N60P is the specified component for applications requiring 36A continuous drain current at 600V. This device offers the highest current capacity and power dissipation rating (650W) among the identified options. The part is Active in product status with confirmed RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1), ensuring regulatory compliance and long-term supply stability.

Substitute Selection (FCH170N60): The FCH170N60 from Fairchild Semiconductor is suitable for applications where the continuous drain current requirement does not exceed 22A. This device maintains the same 600V voltage rating and operates across the identical temperature range (-55°C to 150°C). The FCH170N60 exhibits lower gate charge (55 nC versus 102 nC) and lower input capacitance (2860 pF versus 5800 pF), resulting in faster switching characteristics and reduced gate drive power requirements. However, the maximum power dissipation is significantly lower (227W versus 650W), and the maximum gate voltage is limited to ±20V compared to ±30V on the main part. The FCH170N60 uses TO-247 through-hole packaging, which differs from the TO-264AA package of the IXFK36N60P and requires PCB layout verification for pin compatibility and thermal management.

Substitution Constraints: The FCH170N60 is not suitable for applications requiring continuous drain currents above 22A. Applications with thermal requirements exceeding 227W dissipation must use the IXFK36N60P or equivalent higher-power devices. Gate drive circuits designed for ±30V operation require modification if the FCH170N60 is selected, as its maximum gate voltage is ±20V.

Both devices maintain Active product status and are suitable for new designs. Component selection must be based on specific application current, power dissipation, and gate drive requirements.

Frequently Asked Questions (FAQ)

Q: Can the FCH170N60 directly replace the IXFK36N60P in all applications?

A: No. The FCH170N60 has a lower continuous drain current rating (22A versus 36A) and significantly lower power dissipation capability (227W versus 650W). Direct substitution is only valid for applications where the actual operating current does not exceed 22A and thermal dissipation remains below 227W. Applications requiring the full 36A rating or higher power dissipation must use the IXFK36N60P or equivalent higher-rated devices.

Q: What are the package differences between IXFK36N60P and FCH170N60?

A: The IXFK36N60P uses TO-264AA through-hole packaging, while the FCH170N60 uses TO-247 through-hole packaging. Although both are through-hole devices, the pin configurations and thermal footprints differ. PCB layout modifications are required if substituting between these packages. Pin-to-pin compatibility must be verified against the specific datasheet pinouts before PCB design or component placement.

Q: Are both devices RoHS compliant?

A: The IXFK36N60P is confirmed RoHS3 compliant with REACH Unaffected status. The FCH170N60 compliance status is not specified in the provided data. Regulatory compliance verification is required before selecting the FCH170N60 for applications with RoHS or REACH requirements.

Q: What is the impact of lower gate charge on the FCH170N60?

A: The FCH170N60 has a gate charge of 55 nC compared to 102 nC on the IXFK36N60P. Lower gate charge reduces the energy required to switch the device and allows faster switching transitions. This results in lower gate drive power consumption and potentially improved switching efficiency. However, gate drive circuits must be verified to ensure they can properly charge and discharge the lower capacitance without introducing instability.

Q: Can I use the IXFK36N60P in applications designed for the FCH170N60?

A: Yes. The IXFK36N60P can be used as a direct upgrade in applications originally designed for the FCH170N60. The higher current rating (36A versus 22A), greater power dissipation capability (650W versus 227W), and higher maximum gate voltage (±30V versus ±20V) provide additional design margin. The TO-264AA package differs from TO-247, requiring PCB layout verification for pin compatibility and thermal management.

Q: What is the significance of the different maximum gate voltages (±30V versus ±20V)?

A: The IXFK36N60P supports gate voltages up to ±30V, while the FCH170N60 is limited to ±20V. Gate drive circuits designed for ±30V operation cannot be directly applied to the FCH170N60 without modification. Applications using gate drive voltages above ±20V must use the IXFK36N60P or verify that the FCH170N60 gate drive circuit operates within the ±20V limit.

Q: How do the input capacitance values affect circuit design?

A: The IXFK36N60P has an input capacitance of 5800 pF at 25V, while the FCH170N60 has 2860 pF at 380V. Lower input capacitance reduces the charge required for gate switching and allows faster switching transitions with lower gate drive power. The measurement conditions differ between the two devices (25V versus 380V), reflecting different operating points in the device's capacitance-voltage characteristic. Gate drive circuit design must account for these capacitance values to ensure proper switching performance.

Q: Are both devices suitable for new designs?

A: Yes. Both the IXFK36N60P and FCH170N60 maintain Active product status, ensuring availability for new designs. The IXFK36N60P is the primary choice for applications requiring maximum current capacity and power dissipation. The FCH170N60 is suitable for lower-current applications where its reduced gate charge and input capacitance provide switching performance advantages. Component selection must align with specific application requirements for current, power dissipation, and gate drive characteristics.