IXFK36N60 N-Channel MOSFET 600V 36A Equivalent & Substitute Parts

Part Overview

The IXFK36N60 is an N-Channel MOSFET manufactured by IXYS in the HiPerFET™ series, rated for 600V drain-to-source voltage and 36A continuous drain current at 25°C. The device is housed in a TO-264AA through-hole package and is rated for 500W maximum power dissipation. This part is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal operating ranges while accommodating available packaging and product status options.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	36	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	180	mOhm
Gate Threshold Voltage Vgs(th) (Max)	4.5	V @ 8mA
Gate Charge (Qg) (Max)	325	nC @ 25V
Input Capacitance (Ciss) (Max)	9000	pF @ 25V
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-264AA	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXFK36N60 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 36A at 25°C
Gate Drive Voltage: Must support 10V operation
Package Type: Must be through-hole compatible (TO-264AA or equivalent footprint)
Operating Temperature Range: Must span -55°C to 150°C

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance but are not limiting factors
Gate Charge (Qg): Lower values reduce switching losses but do not prevent substitution
Input Capacitance (Ciss): Affects gate drive requirements but does not prevent substitution
Power Dissipation Rating: Higher ratings provide thermal margin

Substitute parts are grouped into two categories: direct replacements (matching voltage and current ratings) and functional alternatives (higher voltage or current ratings that operate within the application envelope).

Parameter Comparison

Parameter	IXFK36N60	IXFK36N60P	IXFK44N80P	FCH170N60	FQL40N50F
Manufacturer	IXYS	IXYS	IXYS	Fairchild Semiconductor	onsemi
Vdss (V)	600	600	800	600	500
Id @ 25°C (A)	36	36	44	22	40
Drive Voltage (V)	10	10	10	10	10
Rds On (Max) (mOhm)	180 @ 500mA	190 @ 18A	190 @ 22A	170 @ 11A	110 @ 20A
Vgs(th) (Max) (V)	4.5 @ 8mA	5 @ 4mA	5 @ 8mA	3.5 @ 250µA	5 @ 250µA
Gate Charge Qg (Max) (nC)	325 @ 25V	102 @ 10V	198 @ 10V	55 @ 10V	200 @ 10V
Ciss (Max) (pF)	9000 @ 25V	5800 @ 25V	12000 @ 25V	2860 @ 380V	7500 @ 25V
Power Dissipation (Max) (W)	500	650	1040	227	460
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-264AA	TO-264AA	TO-264AA	TO-247	TO-264-3
Product Status	Obsolete	Active	Active	Active	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (Recommended Primary Choice):

The IXFK36N60P is the manufacturer-recommended substitute for the IXFK36N60. Both parts share identical voltage (600V) and current (36A) ratings, operate within the same temperature range (-55°C to 150°C), and use the same TO-264AA package. The IXFK36N60P is classified as active product status, ensuring long-term availability and supply chain stability. Both parts are ROHS3 compliant and REACH unaffected. The IXFK36N60P exhibits improved gate charge characteristics (102 nC versus 325 nC) and lower input capacitance (5800 pF versus 9000 pF), resulting in reduced switching losses and improved gate drive efficiency. Power dissipation rating increases from 500W to 650W, providing additional thermal margin.

Alternative Substitute (Higher Voltage Rating):

The IXFK44N80P is an active product from IXYS in the same HiPerFET™ series, rated for 800V and 44A. This part exceeds the voltage and current requirements of the IXFK36N60 and operates within the same temperature range. The TO-264AA package maintains mechanical compatibility. The higher voltage rating (800V versus 600V) and increased power dissipation (1040W versus 500W) provide design margin for applications with voltage transients or thermal stress. This part is suitable for applications where the 600V rating is marginal or where future design upgrades may require higher voltage capability.

Alternative Substitute (Lower Voltage Rating):

The FQL40N50F is an active product from onsemi rated for 500V and 40A. This part does not meet the minimum 600V requirement of the IXFK36N60 and is not suitable for direct substitution in applications requiring the full 600V rating. However, it may be considered only in applications where the actual operating voltage is confirmed to remain below 500V. The FQL40N50F exhibits superior on-state resistance (110 mOhm versus 180 mOhm), reducing conduction losses. This part is classified as obsolete, limiting long-term availability.

Alternative Substitute (Lower Current Rating):

The FCH170N60 is an active product from Fairchild Semiconductor rated for 600V and 22A. This part does not meet the 36A continuous drain current requirement and is not suitable for direct substitution in applications requiring full 36A capability. The FCH170N60 uses a TO-247 package, which differs from the TO-264AA footprint and requires circuit board layout modification. This part may be considered only in applications where the actual operating current is confirmed to remain below 22A.

Compliance and Availability:

All recommended substitute parts (IXFK36N60P, IXFK44N80P) are active products with ROHS3 compliance and REACH unaffected status, ensuring regulatory compliance and supply chain continuity. The IXFK36N60P is the preferred choice for direct replacement due to identical electrical ratings and active product status.

Frequently Asked Questions (FAQ)

Q: Can the IXFK36N60P directly replace the IXFK36N60 without circuit modification?

A: Yes. The IXFK36N60P is the manufacturer-recommended direct replacement. Both parts share identical Vdss (600V), Id (36A), drive voltage (10V), and operating temperature range (-55°C to 150°C). The TO-264AA package is identical, requiring no PCB layout changes. The IXFK36N60P offers improved performance characteristics with lower gate charge and input capacitance.

Q: Why is the IXFK36N60 classified as obsolete?

A: The IXFK36N60 is an older design in the HiPerFET™ series. IXYS has superseded it with the IXFK36N60P, which offers improved electrical characteristics and is actively manufactured. Obsolete classification indicates that new production has ceased, though existing inventory may remain available.

Q: Can the IXFK44N80P be used in place of the IXFK36N60?

A: Yes, with design considerations. The IXFK44N80P exceeds the voltage (800V versus 600V) and current (44A versus 36A) requirements, making it electrically compatible. The TO-264AA package is identical. The higher voltage rating provides margin for transient overvoltages. However, the increased input capacitance (12000 pF versus 9000 pF) may require gate drive circuit adjustment. This substitution is appropriate for applications where higher voltage capability is beneficial or where voltage transients are present.

Q: Why is the FQL40N50F not recommended as a substitute?

A: The FQL40N50F is rated for 500V, which is below the 600V requirement of the IXFK36N60. Substitution is not permitted unless the application is confirmed to operate at voltages below 500V. Additionally, the FQL40N50F is classified as obsolete, limiting long-term availability. The part is suitable only for applications with confirmed lower voltage operation.

Q: What is the significance of the TO-264AA package versus TO-247?

A: The TO-264AA and TO-247 are different through-hole packages with different pin configurations and PCB footprints. The IXFK36N60 uses TO-264AA. The FCH170N60 uses TO-247, requiring PCB layout modification for substitution. Package compatibility is essential for direct board-level replacement without redesign.

Q: Does the IXFK36N60P have better switching performance than the IXFK36N60?

A: Yes. The IXFK36N60P exhibits lower gate charge (102 nC versus 325 nC at different gate voltages) and lower input capacitance (5800 pF versus 9000 pF), resulting in reduced switching losses and faster switching transitions. These improvements reduce gate drive power requirements and heat generation during switching events.

Q: Are all substitute parts RoHS3 compliant?

A: The IXFK36N60P and IXFK44N80P are confirmed ROHS3 compliant. The FCH170N60 RoHS status is not specified in the provided data. The FQL40N50F is ROHS3 compliant. Compliance verification is required for the FCH170N60 before use in RoHS-regulated applications.

Q: What is the impact of higher power dissipation ratings on thermal design?

A: Higher power dissipation ratings (IXFK36N60P at 650W, IXFK44N80P at 1040W versus IXFK36N60 at 500W) indicate improved thermal capability and allow operation at higher junction temperatures or with reduced heatsinking requirements. However, actual power dissipation depends on application current and on-state resistance, not the rated maximum. The higher rating provides thermal margin and design flexibility.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: The IXFK36N60P is the direct replacement and is fully interchangeable. The IXFK44N80P requires design review due to higher input capacitance and voltage rating, which may affect gate drive circuit performance and application voltage stress analysis. The FCH170N60 and FQL40N50F are not interchangeable due to insufficient current and voltage ratings, respectively, and package differences.

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