IXFK34N80 Equivalent & Substitute Parts

Part Overview

The IXFK34N80 is an N-Channel 800V 34A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-264AA through-hole package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement. The part delivers 560W maximum power dissipation and operates across a temperature range of -55°C to 150°C, serving applications requiring high-voltage switching and power conversion.

Substiute Parts

IXFK34N80
IXYSIn Stock: 14137IXFK34N80 Datasheet
IXFK34N80
Current Part
IXFK44N80P
IXYSIn Stock: 1414IXFK44N80P Datasheet
IXFK44N80P
Direct
APT38F80L
Microchip TechnologyIn Stock: 1749APT38F80L Datasheet
APT38F80L
Similar
FQL40N50F
onsemiIn Stock: 18775FQL40N50F Datasheet
FQL40N50F
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 800 V
Continuous Drain Current (Id) @ 25°C 34 A
Rds On (Max) @ 17A, 10V 240 mOhm
Gate Charge (Qg) @ 10V 270 nC
Input Capacitance (Ciss) @ 25V 7500 pF
Power Dissipation (Max) 560 W
Operating Temperature Range -55 to 150 °C
Package Type TO-264AA Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IXFK34N80 is determined by alignment across the following critical parameters:

Voltage Rating (Vdss): All substitute candidates maintain the 800V drain-to-source voltage specification, ensuring compatibility with the intended application voltage class.

Package Type: Substitutes are limited to TO-264AA or equivalent TO-264-3 through-hole packages to maintain mechanical and thermal interface compatibility.

Current Capability (Id): Substitute parts must meet or exceed the 34A continuous drain current requirement at 25°C to ensure adequate current handling.

Operating Temperature Range: All candidates support the -55°C to 150°C junction temperature range.

Compliance & Status: Active product status is preferred for long-term availability, though obsolete alternatives are included where electrical parameters align.

The IXFK44N80P and APT38F80L are classified as direct substitutes due to matching voltage ratings, package types, and superior current ratings. The FQL40N50F is classified as a similar alternative with reduced voltage rating (500V) and is suitable only for applications where lower voltage operation is acceptable.

Parameter Comparison

Parameter IXFK34N80 IXFK44N80P APT38F80L FQL40N50F
Manufacturer IXYS IXYS Microchip Technology onsemi
Vdss (V) 800 800 800 500
Id @ 25°C (A) 34 44 41 40
Rds On (Max) @ 10V (mOhm) 240 @ 17A 190 @ 22A 240 @ 20A 110 @ 20A
Gate Charge @ 10V (nC) 270 198 260 200
Ciss @ 25V (pF) 7500 12000 8070 7500
Power Dissipation (Max) (W) 560 1040 1040 460
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-264AA TO-264AA TO-264 [L] TO-264-3
Product Status Obsolete Active Active Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IXFK44N80P (Direct Substitute - Preferred): This IXYS HiPerFET™ device is the primary substitute candidate. It maintains identical voltage rating (800V), package type (TO-264AA), and operating temperature range. The part is currently active in production, ensuring long-term availability. Current capability is increased to 44A, providing design margin above the original 34A specification. Gate charge is reduced to 198 nC, improving switching efficiency. Power dissipation capability is doubled to 1040W. RoHS3 compliance and REACH unaffected status match the original part.

APT38F80L (Direct Substitute - Alternative): This Microchip Technology POWER MOS 8™ device provides equivalent voltage rating (800V) and current capability (41A). The TO-264 [L] package is mechanically compatible with TO-264AA applications. Product status is active, supporting long-term procurement. Power dissipation is rated at 1040W. Gate charge (260 nC) and input capacitance (8070 pF) are closely aligned with the original specification. RoHS3 compliance and REACH unaffected status are maintained.

FQL40N50F (Similar Alternative - Limited Scope): This onsemi FRFET® device is suitable only for applications where reduced voltage operation (500V) is acceptable. Current capability (40A) exceeds the original requirement. The part is obsolete, limiting future availability. Lower on-resistance (110 mOhm) may provide efficiency benefits in lower-voltage applications. This substitute is not recommended for direct replacement in 800V-rated circuits.

Frequently Asked Questions (FAQ)

Q: Can the IXFK44N80P directly replace the IXFK34N80 in existing designs?

A: Yes. The IXFK44N80P maintains identical voltage rating (800V), package type (TO-264AA), and operating temperature range (-55°C to 150°C). The increased current rating (44A vs. 34A) and power dissipation (1040W vs. 560W) provide design margin. Gate charge reduction improves switching performance. No circuit modifications are required.

Q: What is the primary difference between the IXFK44N80P and APT38F80L?

A: Both devices support 800V operation and equivalent current ratings (44A vs. 41A). The IXFK44N80P is manufactured by IXYS and uses the TO-264AA package. The APT38F80L is manufactured by Microchip Technology and uses the TO-264 [L] package. Both packages are mechanically compatible with TO-264-3 footprints. Selection depends on supplier availability and design preference.

Q: Why is the FQL40N50F listed as a substitute if it has a lower voltage rating?

A: The FQL40N50F is classified as a similar alternative for applications where the circuit operates at reduced voltage (500V or below). It is not suitable for direct replacement in 800V-rated designs. This part is included for reference in applications where voltage derating is acceptable.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFK44N80P, APT38F80L, and FQL40N50F are all RoHS3 compliant and REACH unaffected, matching the compliance status of the original IXFK34N80.

Q: What is the impact of increased gate charge in the IXFK44N80P?

A: The IXFK44N80P has higher input capacitance (12000 pF vs. 7500 pF) but lower gate charge (198 nC vs. 270 nC). Lower gate charge reduces driver power requirements and improves switching speed. Higher input capacitance may require gate driver output impedance consideration in high-frequency applications.

Q: Is the APT38F80L package (TO-264 [L]) compatible with TO-264AA footprints?

A: Yes. The TO-264 [L] and TO-264AA packages are mechanically and electrically compatible. Both are three-terminal through-hole packages with identical pin configurations and thermal interface requirements.

Q: What is the product status significance for long-term design support?

A: Active product status (IXFK44N80P and APT38F80L) ensures continued manufacturing and availability for future procurement. Obsolete status (IXFK34N80 and FQL40N50F) indicates discontinued production, limiting availability to existing inventory. Active alternatives are recommended for new designs and long-term production support.

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