IXFK32N80P N-Channel 800V 32A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK32N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 32A continuous drain current at 25°C. This device is packaged in a TO-264AA through-hole configuration and is part of the HiPerFET™ series. The component is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal, voltage, and current requirements. Alternative models may be necessary due to inventory availability, lead time considerations, or design optimization for enhanced performance margins.

Substiute Parts

IXFK32N80P
IXYSIn Stock: 1268IXFK32N80P Datasheet
IXFK32N80P
Current Part
APT38F80B2
Microchip TechnologyIn Stock: 1126APT38F80B2 Datasheet
APT38F80B2
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 800 V
Continuous Drain Current (Id) @ 25°C 32 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 270 mOhm @ 16A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 5 V @ 8mA
Power Dissipation (Max) 830 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package Type TO-264AA

Substitute Part Grouping Explanation

Substitute parts for the IXFK32N80P are qualified based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain the 800V Vdss rating to ensure safe operation in the same circuit topology without exceeding voltage stress limits.

Current Capability: Substitute parts must support continuous drain current at or above 32A at 25°C. Parts with higher current ratings provide additional design margin and thermal headroom.

On-State Resistance (Rds On): The maximum on-state resistance must not exceed the specified value at the rated gate voltage (10V) to maintain acceptable conduction losses and thermal performance.

Gate Threshold Voltage: Vgs(th) must remain within ±30V maximum gate voltage specification to ensure compatible gate drive circuitry.

Thermal Performance: Power dissipation capability must support the application's thermal requirements within the -55°C to 150°C operating temperature range.

Mounting Configuration: All substitute parts must be through-hole mounted devices to maintain PCB layout compatibility.

Compliance Status: All parts must maintain Active product status and RoHS3 compliance for regulatory and supply chain continuity.

Parameter Comparison

Parameter IXFK32N80P (Main) APT38F80B2 (Substitute) Unit
Manufacturer IXYS Microchip Technology
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 800 V
Continuous Drain Current (Id) @ 25°C 32 41 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 270 mOhm @ 16A, 10V 240 mOhm @ 20A, 10V mOhm
Vgs(th) (Max) @ Id 5 @ 8mA 5 @ 2.5mA V
Gate Charge (Qg) (Max) @ Vgs 150 @ 10V 260 @ 10V nC
Vgs (Max) ±30 ±30 V
Input Capacitance (Ciss) (Max) @ Vds 8800 @ 25V 8070 @ 25V pF
Power Dissipation (Max) 830 1040 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package Type TO-264AA T-MAX™ [B2]
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Active Active

Engineering Selection Recommendations

APT38F80B2 as Primary Substitute:

The APT38F80B2 manufactured by Microchip Technology qualifies as a direct substitute for the IXFK32N80P based on the following criteria:

Both devices maintain identical 800V Vdss ratings, ensuring voltage compatibility within the same circuit topology. The APT38F80B2 provides 41A continuous drain current, exceeding the IXFK32N80P's 32A specification by 28%, delivering enhanced current capacity and thermal margin.

On-state resistance performance is superior in the APT38F80B2 at 240 mOhm compared to 270 mOhm in the IXFK32N80P, resulting in reduced conduction losses and improved efficiency. Power dissipation capability increases from 830W to 1040W, supporting higher thermal loads.

Both devices operate across the identical -55°C to 150°C temperature range and maintain ±30V maximum gate voltage specification. Gate threshold voltage remains at 5V maximum, ensuring compatible gate drive requirements.

Both parts are Active in product status, RoHS3 compliant, and carry unlimited moisture sensitivity rating (MSL 1), meeting all regulatory and supply chain requirements.

Package differences exist between TO-264AA (IXFK32N80P) and T-MAX™ [B2] (APT38F80B2). PCB layout modifications are required to accommodate the different through-hole package footprint. Thermal performance characteristics of the T-MAX™ package provide equivalent or superior heat dissipation compared to TO-264AA.

Frequently Asked Questions (FAQ)

Q: Can the APT38F80B2 directly replace the IXFK32N80P without circuit modifications?

A: Electrical substitution is valid based on voltage, current, and gate drive specifications. However, PCB layout changes are required due to different through-hole package footprints (TO-264AA versus T-MAX™ [B2]). Gate drive timing may differ due to higher gate charge (260 nC versus 150 nC), requiring evaluation of gate driver current capacity.

Q: What are the key advantages of using the APT38F80B2 as a substitute?

A: The APT38F80B2 provides 28% higher continuous drain current (41A versus 32A), 30% lower on-state resistance (240 mOhm versus 270 mOhm), and 25% higher power dissipation capability (1040W versus 830W). These improvements deliver enhanced thermal margin and reduced conduction losses.

Q: Are there any disadvantages to substituting with the APT38F80B2?

A: Gate charge is significantly higher (260 nC versus 150 nC), requiring gate driver circuits with sufficient current output. Input capacitance is slightly lower (8070 pF versus 8800 pF). Package footprint differences necessitate PCB redesign.

Q: Do both parts meet the same compliance and regulatory requirements?

A: Yes. Both the IXFK32N80P and APT38F80B2 are RoHS3 compliant, REACH unaffected, carry MSL 1 (unlimited moisture sensitivity), and maintain Active product status.

Q: What is the operating temperature compatibility between these parts?

A: Both devices operate across the identical -55°C to 150°C junction temperature range, ensuring thermal compatibility in the same application environment.

Q: Are gate drive circuits compatible between the two parts?

A: Gate threshold voltage remains identical at 5V maximum, and maximum gate voltage is ±30V for both parts. However, the higher gate charge of the APT38F80B2 (260 nC versus 150 nC) requires gate driver circuits with adequate current sourcing capability to maintain switching speed performance.

Q: Can the APT38F80B2 be used in high-frequency switching applications?

A: Gate charge is the primary factor affecting switching frequency capability. The APT38F80B2's higher gate charge (260 nC) may result in slower switching transitions compared to the IXFK32N80P (150 nC). Gate driver current capacity must be evaluated for the target switching frequency.

Q: What package considerations apply when substituting these parts?

A: The IXFK32N80P uses TO-264AA packaging while the APT38F80B2 uses T-MAX™ [B2] packaging. Both are through-hole configurations but have different physical dimensions and pin layouts. PCB footprint redesign is mandatory. Thermal interface requirements may differ between packages.

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