IXFK32N60 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK32N60 is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 32A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-264AA through-hole package. The IXFK32N60 is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	32	A (Tc)
Rds On (Max) @ Id, Vgs	250	mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs	325	nC @ 10V
Power Dissipation (Max)	500	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-264AA	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFK32N60 is determined by the following critical electrical and mechanical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel topology
Mounting Type: Through Hole configuration
Package Family: TO-264 series (TO-264AA or TO-264-3)
Operating Temperature Range: Minimum -55°C to 150°C (TJ)
RoHS Compliance: ROHS3 Compliant

Electrical Performance Boundaries:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 32A at 25°C
Rds On (Max): Must not exceed 250 mOhm at specified conditions
Gate Charge (Qg): Must not exceed 325 nC at 10V
Power Dissipation: Must equal or exceed 500W

The APT44F80L from Microchip Technology satisfies all mandatory compatibility criteria and exceeds electrical performance specifications, making it a valid substitute for the obsolete IXFK32N60.

Parameter Comparison

Parameter	IXFK32N60 (Main Part)	APT44F80L (Substitute)	Unit
Manufacturer	IXYS	Microchip Technology	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	600	800	V
Continuous Drain Current (Id) @ 25°C	32	47	A (Tc)
Rds On (Max) @ Id, Vgs	250 @ 500mA, 10V	240 @ 24A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	325 @ 10V	305 @ 10V	nC
Vgs (Max)	±20	±30	V
Input Capacitance (Ciss) (Max) @ Vds	9000 @ 25V	9330 @ 25V	pF
Power Dissipation (Max)	500	1135	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package	TO-264AA	TO-264	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The APT44F80L is a direct substitute for the obsolete IXFK32N60 based on the following engineering criteria:

Compliance and Availability: The APT44F80L maintains ROHS3 compliance and REACH unaffected status, matching the regulatory requirements of the original part. As an active product with 1415 units in stock, the APT44F80L provides supply chain continuity for applications currently using the IXFK32N60.

Electrical Performance: The APT44F80L exceeds the electrical specifications of the IXFK32N60 across all critical parameters. The higher Vdss rating (800V versus 600V) and increased continuous drain current (47A versus 32A) provide enhanced performance margins. The Rds On value (240 mOhm) is lower than the IXFK32N60 specification (250 mOhm), resulting in reduced conduction losses. Gate charge is reduced (305 nC versus 325 nC), improving switching efficiency.

Thermal and Mechanical Compatibility: Both devices operate across the identical temperature range (-55°C to 150°C TJ) and share the same through-hole mounting configuration. The TO-264 package of the APT44F80L is mechanically compatible with TO-264AA footprints used in existing designs.

Design Margin: The APT44F80L provides increased design margin through higher power dissipation capability (1135W versus 500W) and higher gate voltage tolerance (±30V versus ±20V), making it suitable for applications requiring enhanced reliability and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the APT44F80L directly replace the IXFK32N60 in existing PCB designs?

A: Yes. Both devices use the TO-264 through-hole package family with identical pin configurations and mechanical footprints. No PCB modifications are required for physical installation.

Q: What are the key differences between these two MOSFETs?

A: The APT44F80L has a higher Vdss rating (800V versus 600V), higher continuous drain current (47A versus 32A), lower on-resistance (240 mOhm versus 250 mOhm), and significantly higher power dissipation capability (1135W versus 500W). These differences represent performance enhancements rather than incompatibilities.

Q: Is the APT44F80L suitable for applications originally designed for the IXFK32N60?

A: Yes. The APT44F80L meets or exceeds all electrical and thermal requirements of the IXFK32N60. Applications operating at or below the original specifications will function correctly with the substitute part.

Q: Are there any gate drive considerations when switching from IXFK32N60 to APT44F80L?

A: Gate drive requirements are comparable. Both devices have similar gate charge values (325 nC versus 305 nC) and operate with 10V drive voltage. The APT44F80L accepts a wider gate voltage range (±30V versus ±20V), providing additional design flexibility.

Q: What is the compliance status of the APT44F80L?

A: The APT44F80L is ROHS3 compliant and REACH unaffected, matching the regulatory requirements of the original IXFK32N60.

Q: Why is the IXFK32N60 listed as obsolete?

A: The IXFK32N60 is an older HiPerFET™ series device from IXYS. Microchip Technology's APT44F80L represents a newer generation of N-Channel MOSFETs with improved performance characteristics and active manufacturing status.

Q: Can the APT44F80L be used in higher voltage applications than the IXFK32N60?

A: The APT44F80L is rated for 800V Vdss, compared to 600V for the IXFK32N60. Applications requiring operation above 600V can utilize the APT44F80L's higher voltage rating. However, applications designed for 600V operation remain fully compatible.

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