IXFK32N50Q N-Channel 500V 32A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK32N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 32A continuous drain current in a Through Hole TO-264AA package. This device is part of the HiPerFET™ series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts with compatible electrical and mechanical specifications are necessary for design continuity and procurement alternatives.

Substiute Parts

IXFK32N50Q

IXYSIn Stock: 975IXFK32N50Q Datasheet

Current PartRFQ

FQL40N50F

onsemiIn Stock: 18775FQL40N50F Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFK32N50Q is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• FET Type: Must be N-Channel
• Operating Temperature Range: Must support -55°C to 150°C
• Mounting Type: Must be Through Hole
• Package Compatibility: Must be compatible with TO-264-3 or TO-264AA footprints

Current and Power Handling:

• Continuous Drain Current (Id): Substitute must meet or exceed 32A @ 25°C
• Power Dissipation: Substitute must support thermal requirements of the application

The FQL40N50F from onsemi qualifies as a direct substitute based on matching voltage rating (500V), N-Channel topology, identical operating temperature range (-55°C to 150°C), Through Hole mounting, and compatible TO-264-3 package. The FQL40N50F provides higher current capability (40A) and improved on-resistance characteristics, making it a suitable replacement for the obsolete IXFK32N50Q.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FQL40N50F

The FQL40N50F is the recommended substitute for the IXFK32N50Q based on the following factors:

Electrical Equivalence:

• Identical 500V Vdss rating ensures compatibility with voltage-constrained applications
• N-Channel topology and operating temperature range (-55°C to 150°C) match the original specification
• Higher continuous drain current (40A vs. 32A) provides design margin and improved thermal performance
• Lower on-resistance (110 mOhm @ 20A vs. 160 mOhm @ 16A) reduces conduction losses

Mechanical Compatibility:

• Through Hole mounting type is identical
• TO-264-3 package is mechanically and electrically compatible with TO-264AA footprints
• Pin configuration supports direct board-level substitution

Compliance and Availability:

• FQL40N50F is RoHS3 Compliant and REACH Unaffected
• Higher inventory availability (18,700 pcs) compared to the obsolete IXFK32N50Q (878 pcs)
• Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications

Design Considerations: The FQL40N50F exhibits higher input capacitance (7500 pF vs. 3950 pF) and gate charge (200 nC vs. 150 nC), which may require gate drive circuit evaluation in high-frequency switching applications. The increased Vgs maximum rating (±30V vs. ±20V) provides additional gate voltage margin.

Frequently Asked Questions (FAQ)

Q: Can the FQL40N50F be used as a direct replacement for the IXFK32N50Q?

A: Yes. Both devices share identical voltage ratings (500V Vdss), N-Channel topology, operating temperature range (-55°C to 150°C), Through Hole mounting, and compatible TO-264-3/TO-264AA packages. The FQL40N50F provides higher current capability and lower on-resistance, making it suitable for direct substitution.

Q: What are the key differences between the IXFK32N50Q and FQL40N50F?

A: The primary differences are continuous drain current (40A vs. 32A), on-resistance (110 mOhm vs. 160 mOhm), input capacitance (7500 pF vs. 3950 pF), gate charge (200 nC vs. 150 nC), and maximum gate voltage (±30V vs. ±20V). These differences favor the FQL40N50F in terms of current handling and thermal performance.

Q: Are there any package compatibility concerns?

A: No. Both the IXFK32N50Q and FQL40N50F use compatible TO-264-3 and TO-264AA packages. The Through Hole mounting type and pin configuration are identical, allowing direct board-level substitution without layout modifications.

Q: Does the higher input capacitance of the FQL40N50F affect gate drive requirements?

A: The FQL40N50F has higher input capacitance (7500 pF vs. 3950 pF) and gate charge (200 nC vs. 150 nC). Applications with high-frequency switching or current-limited gate drive circuits should evaluate whether existing gate drive circuitry can accommodate these increased capacitive loads.

Q: What is the compliance status of the FQL40N50F?

A: The FQL40N50F is RoHS3 Compliant and REACH Unaffected. Both the original IXFK32N50Q and substitute share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: Why is the IXFK32N50Q classified as obsolete?

A: The IXFK32N50Q is listed as obsolete by the manufacturer. The FQL40N50F, also obsolete, serves as a functional equivalent for applications requiring 500V N-Channel MOSFET performance in Through Hole packages.

Q: Can the FQL40N50F handle the same power dissipation as the IXFK32N50Q?

A: The FQL40N50F has a slightly higher maximum power dissipation rating (460W vs. 416W). Combined with its lower on-resistance, the FQL40N50F provides improved thermal performance and is suitable for applications within the original device's power envelope.