IXFK30N50Q N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK30N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 30A continuous drain current. This device is part of the HiPerFET™ series and is housed in a TO-264AA through-hole package. The IXFK30N50Q is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFK30N50Q

IXYSIn Stock: 774IXFK30N50Q Datasheet

Current PartRFQ

IXFK32N80Q3

IXYSIn Stock: 1598IXFK32N80Q3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFK30N50Q is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 500V
• Continuous Drain Current (Id): Substitute must equal or exceed 30A at 25°C
• Operating Temperature Range: Substitute must support -55°C to 150°C
• Gate Drive Voltage: Substitute must be compatible with 10V drive voltage

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package: TO-264AA form factor required

The IXFK32N80Q3 qualifies as a substitute based on these parameters. While it exhibits higher voltage rating (800V vs. 500V), higher current capability (32A vs. 30A), and higher power dissipation (1000W vs. 416W), these represent improvements that do not compromise circuit functionality. The device maintains identical mounting type, package form factor, and operating temperature range.

Parameter Comparison

Engineering Selection Recommendations

IXFK32N80Q3 as Primary Substitute:

The IXFK32N80Q3 is the appropriate substitute for the obsolete IXFK30N50Q. Selection is based on the following factors:

Product Status: The IXFK32N80Q3 maintains Active product status, ensuring long-term availability and supply chain continuity. The IXFK30N50Q is classified as Obsolete, creating sourcing constraints.

Compliance and Certifications: The IXFK32N80Q3 carries RoHS3 compliance and REACH Unaffected status, meeting current regulatory requirements. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Electrical Performance: The IXFK32N80Q3 exceeds the electrical specifications of the IXFK30N50Q across all critical parameters. The higher voltage rating (800V vs. 500V) and current capability (32A vs. 30A) provide design margin without introducing incompatibility. The increased power dissipation rating (1000W vs. 416W) supports thermal management in demanding applications.

Package and Mounting Compatibility: Both devices utilize identical TO-264AA through-hole packaging, enabling direct mechanical substitution without PCB redesign.

Inventory Availability: The IXFK32N80Q3 is available in significantly higher quantities (1549 Pcs) compared to the IXFK30N50Q (672 Pcs), supporting production requirements and long-term stock planning.

Frequently Asked Questions (FAQ)

Q: Can the IXFK32N80Q3 directly replace the IXFK30N50Q in existing designs?

A: Yes. The IXFK32N80Q3 maintains identical mounting type (Through Hole) and package form factor (TO-264AA). Pin configuration and electrical interface compatibility are preserved. The higher voltage and current ratings of the substitute do not create functional incompatibility.

Q: What are the key differences between these two devices?

A: The IXFK32N80Q3 features higher drain-to-source voltage (800V vs. 500V), higher continuous drain current (32A vs. 30A), higher power dissipation capability (1000W vs. 416W), and higher maximum gate voltage (±30V vs. ±20V). The IXFK30N50Q exhibits lower on-resistance (160 mOhm vs. 270 mOhm) and lower input capacitance (3950 pF vs. 6940 pF).

Q: Why is the IXFK30N50Q classified as Obsolete?

A: Product obsolescence is determined by the manufacturer. The IXFK32N80Q3, as an active product in the same HiPerFET™ series, provides equivalent or superior functionality and is recommended for new designs and production continuity.

Q: Are there thermal management considerations when substituting these devices?

A: The IXFK32N80Q3 has higher power dissipation capability (1000W vs. 416W), which may affect thermal design. Existing thermal management solutions designed for the IXFK30N50Q must be evaluated for the substitute device. Higher on-resistance (270 mOhm vs. 160 mOhm) may result in increased heat generation under identical operating conditions.

Q: What is the significance of the Q3 Class designation on the IXFK32N80Q3?

A: The Q3 Class designation indicates the device belongs to a specific quality and reliability classification within the IXYS product line. This classification supports automotive and industrial applications requiring enhanced reliability standards.

Q: Are both devices RoHS compliant?

A: The IXFK32N80Q3 carries explicit RoHS3 compliance certification. The IXFK30N50Q does not list RoHS status in the provided specifications. For applications requiring RoHS compliance, the IXFK32N80Q3 is the appropriate selection.

Q: What is the Moisture Sensitivity Level (MSL) for these devices?

A: Both the IXFK30N50Q and IXFK32N80Q3 carry MSL Level 1 (Unlimited), indicating no moisture sensitivity constraints during storage or handling.