IXFK30N100Q2 Equivalent & Substitute Parts

Part Overview

The IXFK30N100Q2 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 30A continuous drain current at 25°C. Manufactured by IXYS, this device is part of the HiPerFET™ Q2 Class series and is housed in a TO-264AA through-hole package. The component is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and mounting constraints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	30	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	400 mOhm @ 15A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	5	V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	186	nC @ 10V
Maximum Gate Voltage Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	8200	pF @ 25V
Power Dissipation (Max)	735	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-264-3, TO-264AA	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFK30N100Q2 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss) must equal or exceed 1000V
Continuous Drain Current (Id) must equal or exceed 30A at 25°C
Drive Voltage (Max Rds On) must equal 10V
Maximum Gate Voltage (Vgs Max) must equal ±30V
Operating Temperature Range must span -55°C to 150°C (TJ)

Mechanical Compatibility Requirements:

Mounting Type must be Through Hole
Package must be compatible with TO-264-3 or TO-264AA footprints

Regulatory & Compliance Requirements:

RoHS3 Compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited)
REACH Unaffected status required

The substitute parts identified below satisfy all electrical, mechanical, and regulatory criteria, with variations in on-resistance characteristics, gate charge, and power dissipation that reflect different manufacturing technologies and thermal management capabilities.

Parameter Comparison

Parameter	IXFK30N100Q2	APT29F100L	APT34F100B2
Manufacturer	IXYS	Microchip Technology	Microchip Technology
Product Status	Obsolete	Active	Active
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	1000 V	1000 V	1000 V
Continuous Drain Current (Id) @ 25°C	30 A	30 A	35 A
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	400 mOhm @ 15A, 10V	460 mOhm @ 16A, 10V	380 mOhm @ 18A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5 V @ 8mA	5 V @ 2.5mA	5 V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	186 nC @ 10V	260 nC @ 10V	305 nC @ 10V
Maximum Gate Voltage (Vgs Max)	±30 V	±30 V	±30 V
Input Capacitance (Ciss) (Max) @ Vds	8200 pF @ 25V	8500 pF @ 25V	9835 pF @ 25V
Power Dissipation (Max)	735 W	1040 W	1135 W
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-264-3, TO-264AA	TO-264-3, TO-264AA	TO-247-3 Variant
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

APT29F100L (Microchip Technology)

The APT29F100L is an active product offering direct electrical equivalence to the IXFK30N100Q2. Both devices maintain identical Vdss (1000V), Id (30A), and drive voltage specifications. The APT29F100L features slightly elevated on-resistance (460 mOhm vs. 400 mOhm) and gate charge (260 nC vs. 186 nC), resulting in marginally higher switching losses. Power dissipation capability is enhanced at 1040W compared to 735W. The device is packaged in TO-264 format compatible with TO-264AA footprints. Active product status ensures long-term availability and supply chain continuity. RoHS3 compliance and REACH unaffected status satisfy regulatory requirements.

APT34F100B2 (Microchip Technology)

The APT34F100B2 provides enhanced current handling at 35A continuous drain current, exceeding the 30A specification of the IXFK30N100Q2. This device delivers superior on-resistance performance (380 mOhm vs. 400 mOhm) and increased power dissipation capability (1135W vs. 735W). Gate charge is elevated at 305 nC, reflecting the higher current rating. The device is housed in a T-MAX™ [B2] package, a TO-247-3 variant that differs from the TO-264AA footprint of the original part. This package variant requires PCB layout modification and may necessitate mechanical redesign of mounting hardware. Active product status and full regulatory compliance are maintained. Selection of this substitute is appropriate when increased current margin and thermal performance justify package transition costs.

Frequently Asked Questions (FAQ)

Q: Can the APT29F100L directly replace the IXFK30N100Q2 without PCB modification?

A: Yes. The APT29F100L is packaged in TO-264 format, which is footprint-compatible with the TO-264AA package of the IXFK30N100Q2. No PCB layout changes are required for this substitution.

Q: What are the implications of the higher on-resistance in the APT29F100L?

A: The APT29F100L exhibits 460 mOhm on-resistance compared to 400 mOhm in the IXFK30N100Q2. This 15% increase results in proportionally higher conduction losses. In applications where the device operates at or near 30A continuous current, thermal management must account for the additional power dissipation. The APT29F100L's higher power rating (1040W vs. 735W) provides margin for this condition.

Q: Does the APT34F100B2 require PCB redesign?

A: Yes. The APT34F100B2 uses a T-MAX™ [B2] package (TO-247-3 variant), which differs from the TO-264AA footprint of the IXFK30N100Q2. PCB layout modification and potential changes to mounting hardware are necessary. This substitution is appropriate only when design flexibility permits package transition.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both APT29F100L and APT34F100B2 are RoHS3 compliant and REACH unaffected, matching the regulatory status of the IXFK30N100Q2.

Q: What is the significance of the gate charge difference between these devices?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The IXFK30N100Q2 requires 186 nC, while the APT29F100L requires 260 nC and the APT34F100B2 requires 305 nC. Higher gate charge demands greater driver current capability and may increase switching losses in high-frequency applications. Driver circuits must be verified for compatibility with the selected substitute.

Q: Can the APT34F100B2 be used in applications rated for 30A if the higher current rating provides additional margin?

A: Yes. The APT34F100B2's 35A rating provides 17% current margin over the 30A requirement. However, the package transition from TO-264AA to T-MAX™ [B2] requires PCB redesign. This substitution is justified only when the enhanced thermal performance and current margin offset the cost and schedule impact of layout modification.

Q: What is the product status significance for long-term supply planning?

A: The IXFK30N100Q2 is classified as obsolete, indicating discontinued manufacturing and limited remaining inventory. Both substitute parts (APT29F100L and APT34F100B2) are active products with ongoing production, ensuring availability for new designs and future production runs. Active status is critical for applications requiring extended product lifecycles.

Q: Are the operating temperature ranges identical across all three devices?

A: Yes. All three devices operate across the identical temperature range of -55°C to 150°C (TJ), ensuring thermal compatibility in applications spanning this specification.

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