IXFK27N80 N-Channel 800V 27A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK27N80 is an N-Channel MOSFET manufactured by IXYS in the HiPerFET™ series, rated for 800V drain-to-source voltage and 27A continuous drain current at 25°C. This device is packaged in a through-hole TO-264AA configuration and is rated for 500W maximum power dissipation. The part carries a Last Time Buy product status, indicating that IXYS has discontinued this component from active production. Equivalent and substitute parts are necessary to maintain design continuity and ensure long-term component availability for new designs and production runs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	27	A
On-State Resistance (Rds On Max) @ Id, Vgs	300 mOhm @ 13.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 8mA
Gate Charge (Qg Max) @ Vgs	400	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	9740	pF @ 25V
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-264AA	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IXFK27N80 are selected based on electrical and mechanical compatibility within the following criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Equal to or greater than 800V
Continuous Drain Current (Id): Equal to or greater than 27A at 25°C
On-State Resistance (Rds On): Equal to or less than 300 mOhm at specified gate voltage
Package Type: TO-264AA or TO-264 through-hole configuration
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Minimum -55°C to 150°C

Substitution Logic:

Parts meeting all primary criteria are classified as direct substitutes. The IXFK32N80P exceeds the current rating (32A vs. 27A) and improves on-state resistance (270 mOhm vs. 300 mOhm), making it a higher-performance substitute within the same voltage class and package family. The APT8030LVFRG and APT8030LVRG are functionally equivalent alternatives from Microchip Technology, matching the 27A current rating and 800V voltage specification while maintaining identical on-state resistance and package compatibility.

Parameter Comparison

Parameter	IXFK27N80	IXFK32N80P	APT8030LVFRG	APT8030LVRG
Manufacturer	IXYS	IXYS	Microchip Technology	Microchip Technology
Vdss (V)	800	800	800	800
Id @ 25°C (A)	27	32	27	27
Rds On Max (mOhm)	300 @ 13.5A, 10V	270 @ 16A, 10V	300 @ 500mA, 10V	300 @ 500mA, 10V
Vgs(th) Max (V)	4.5 @ 8mA	5 @ 8mA	4 @ 2.5mA	4 @ 2.5mA
Qg Max (nC)	400 @ 10V	150 @ 10V	510 @ 10V	510 @ 10V
Ciss Max (pF)	9740 @ 25V	8800 @ 25V	7900 @ 25V	7900 @ 25V
Power Dissipation Max (W)	500	830	Not specified	Not specified
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-264AA	TO-264AA	TO-264	TO-264
Product Status	Last Time Buy	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IXFK32N80P (IXYS): This part is recommended as the primary substitute for new designs and production continuity. It maintains the same 800V voltage rating and TO-264AA package configuration as the IXFK27N80. The IXFK32N80P offers improved electrical performance with higher current capability (32A vs. 27A), lower on-state resistance (270 mOhm vs. 300 mOhm), and significantly higher power dissipation rating (830W vs. 500W). The part carries Active product status, ensuring long-term availability. Both IXYS parts are ROHS3 compliant and REACH unaffected.

APT8030LVFRG and APT8030LVRG (Microchip Technology): These parts provide functional equivalence to the IXFK27N80 with identical 27A current rating and 800V voltage specification. Both are manufactured by Microchip Technology under the POWER MOS V® series and carry Active product status. The APT8030 series devices feature lower input capacitance (7900 pF vs. 9740 pF) and lower gate charge (510 nC vs. 400 nC), which may affect gate drive circuit design. Both parts are ROHS3 compliant and REACH unaffected. The APT8030LVFRG is packaged in Tube, while the APT8030LVRG packaging is not specified. Both use TO-264 through-hole configuration compatible with TO-264AA footprints.

All substitute parts maintain the -55°C to 150°C operating temperature range and N-Channel MOSFET technology of the original IXFK27N80.

Frequently Asked Questions (FAQ)

Q: Can the IXFK32N80P be used as a direct replacement for the IXFK27N80 in existing designs?

A: The IXFK32N80P is electrically compatible as a substitute. Both parts share the same 800V Vdss rating, TO-264AA package, and operating temperature range. The IXFK32N80P provides higher current capability (32A vs. 27A) and lower on-state resistance (270 mOhm vs. 300 mOhm), making it suitable for applications where the IXFK27N80 was used. Gate drive circuits may require adjustment due to differences in gate charge (150 nC vs. 400 nC) and input capacitance (8800 pF vs. 9740 pF).

Q: What are the key differences between the IXFK27N80 and the APT8030LVFRG?

A: Both parts are rated for 800V and 27A continuous drain current, making them functionally equivalent in terms of voltage and current handling. The primary differences are manufacturer (IXYS vs. Microchip Technology), gate charge (400 nC vs. 510 nC), input capacitance (9740 pF vs. 7900 pF), and product status (Last Time Buy vs. Active). The APT8030LVFRG features lower input capacitance, which may reduce gate drive power requirements in some applications.

Q: Are the TO-264 and TO-264AA packages mechanically compatible?

A: The TO-264 and TO-264AA packages are mechanically compatible for through-hole mounting applications. Both use the same three-pin configuration and footprint spacing. The APT8030 series parts in TO-264 configuration can be mounted on PCBs designed for TO-264AA devices without modification.

Q: What is the significance of the IXFK27N80 being marked as Last Time Buy?

A: Last Time Buy status indicates that IXYS has discontinued this part from active production. Existing inventory may be available for a limited time, but long-term supply cannot be guaranteed. Designers should transition to active alternatives such as the IXFK32N80P or APT8030 series parts to ensure component availability for future production runs.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. The IXFK27N80 requires 400 nC at 10V, while the IXFK32N80P requires only 150 nC and the APT8030 series requires 510 nC. Lower gate charge reduces gate drive power dissipation and switching losses. Higher gate charge increases gate drive circuit complexity and power requirements. Gate drive circuits must be designed to supply sufficient current to charge the gate within the required switching time.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFK27N80, IXFK32N80P, APT8030LVFRG, and APT8030LVRG are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

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