IXFK26N100P N-Channel 1000V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFK26N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 26A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-264AA through-hole package. The component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance parameters align with the main device specifications, enabling direct replacement in circuit applications where package compatibility and thermal characteristics permit such substitution.

Substiute Parts

IXFK26N100P

IXYSIn Stock: 1034IXFK26N100P Datasheet

Current PartRFQ

APT29F100B2

Microchip TechnologyIn Stock: 932APT29F100B2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFK26N100P are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Equivalence: Both the main part and substitute must maintain 1000V Vdss rating to ensure equivalent voltage withstand capability.

Current Rating Compatibility: The substitute part must support continuous drain current at or above 26A at 25°C to maintain or exceed the original device performance envelope.

Drive Voltage Alignment: Gate drive voltage specifications must align at 10V maximum Rds On condition to ensure compatible gate driver circuit operation.

Gate Threshold Voltage: Vgs(th) specifications must fall within compatible ranges to ensure proper gate switching behavior with existing control circuitry.

Temperature Operating Range: The substitute must support the full -55°C to 150°C operating temperature range to maintain thermal compatibility.

Mounting and Package Compatibility: Through-hole mounting type is required; however, package variants (TO-264AA versus T-MAX™ [B2]) may differ while maintaining functional equivalence through proper PCB layout adaptation.

Regulatory Compliance: Both parts must maintain RoHS3 compliance and REACH unaffected status for equivalent environmental and regulatory standing.

Parameter Comparison

Engineering Selection Recommendations

APT29F100B2 as Substitute for IXFK26N100P

The APT29F100B2 manufactured by Microchip Technology qualifies as a functional substitute based on the following criteria:

Voltage and Current Ratings: Both devices maintain identical 1000V Vdss ratings. The APT29F100B2 provides 30A continuous drain current, exceeding the 26A requirement of the IXFK26N100P, thereby supporting equivalent or enhanced current handling capacity.

Gate Drive Compatibility: Both parts operate at 10V maximum Rds On condition, ensuring compatible gate driver circuit integration without modification.

Thermal Performance: The APT29F100B2 provides 1040W maximum power dissipation compared to 780W for the IXFK26N100P, offering superior thermal headroom in power-limited applications.

Temperature Range: Both devices support the full -55°C to 150°C operating temperature range, maintaining thermal compatibility across all specified operating conditions.

Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring equivalent environmental and regulatory standing for direct substitution in compliant applications.

Package Consideration: The APT29F100B2 uses T-MAX™ [B2] packaging versus the TO-264AA of the main part. Both are through-hole packages; however, PCB layout modifications are required to accommodate the different package footprint and pin configuration.

Product Status: Both devices maintain Active product status, ensuring continued availability and manufacturing support.

Frequently Asked Questions (FAQ)

Q: Can the APT29F100B2 directly replace the IXFK26N100P without circuit modification?

A: The APT29F100B2 provides electrical equivalence in voltage rating, current capacity, and gate drive specifications. However, the different package format (T-MAX™ [B2] versus TO-264AA) requires PCB layout modification to accommodate the alternate footprint and pin arrangement. Gate drive circuitry does not require modification.

Q: What are the key electrical parameters that determine substitution eligibility?

A: Substitution eligibility is determined by: (1) matching 1000V Vdss rating, (2) equal or greater continuous drain current capacity, (3) compatible 10V gate drive voltage specification, (4) compatible gate threshold voltage range, and (5) matching ±30V maximum gate voltage rating. All these parameters align between the IXFK26N100P and APT29F100B2.

Q: Does the higher gate charge (260 nC versus 197 nC) of the APT29F100B2 affect gate driver selection?

A: Gate charge differences affect gate driver current sourcing/sinking requirements and switching speed characteristics. The APT29F100B2 requires higher gate charge delivery; however, this parameter is not a substitution barrier if the existing gate driver circuit provides sufficient current capacity. Gate driver circuit evaluation is required for specific applications.

Q: Are there thermal performance differences between these devices?

A: The APT29F100B2 provides 1040W maximum power dissipation versus 780W for the IXFK26N100P. This represents enhanced thermal capability. The APT29F100B2 also exhibits lower input capacitance (8500 pF versus 11900 pF), which may reduce gate drive power requirements in high-frequency switching applications.

Q: What package considerations apply to substitution?

A: The IXFK26N100P uses TO-264AA packaging while the APT29F100B2 uses T-MAX™ [B2] packaging. Both are through-hole packages with different physical dimensions and pin configurations. PCB layout redesign is required to accommodate the alternate package footprint. Thermal management characteristics may differ due to package geometry variations.

Q: Do both parts maintain equivalent compliance certifications?

A: Both the IXFK26N100P and APT29F100B2 maintain ROHS3 compliance, REACH unaffected status, and unlimited moisture sensitivity rating (MSL 1). Regulatory and environmental compliance is equivalent between both devices.

Q: What is the operating temperature compatibility between these devices?

A: Both devices support identical -55°C to 150°C junction temperature operating ranges, ensuring full thermal compatibility across all specified operating conditions without derating or thermal management modifications.