IXFK20N120 Equivalent & Substitute Parts

Part Overview

The IXFK20N120 is an N-Channel 1200 V, 20 A (Tc) MOSFET manufactured by IXYS in the HiPerFET™ series. This device is housed in a Through Hole TO-264AA package and is rated for 780 W maximum power dissipation. The IXFK20N120 is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFK20N120
IXYSIn Stock: 68706IXFK20N120 Datasheet
IXFK20N120
Current Part
APT26F120L
Microchip TechnologyIn Stock: 1129APT26F120L Datasheet
APT26F120L
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 1200 V
Continuous Drain Current (Id) @ 25°C 20 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 750 mOhm @ 500 mA, 10 V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4.5 V @ 8 mA
Gate Charge (Qg) @ Vgs 160 nC @ 10 V
Maximum Gate Voltage (Vgs) ±30 V
Input Capacitance (Ciss) @ Vds 7400 pF @ 25 V
Power Dissipation (Max) 780 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package TO-264AA -
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitute components for the IXFK20N120 are identified based on strict electrical and mechanical compatibility criteria. The following parameters define the substitution scope:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): 1200 V
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Through Hole
  • Package Family: TO-264 series
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Gate Voltage Rating (Vgs): ±30 V

Allowable Variation Parameters:

  • Continuous Drain Current (Id): Equal to or greater than 20 A
  • Rds On (Max): Equal to or lower than 750 mOhm
  • Power Dissipation (Max): Equal to or greater than 780 W
  • Gate Charge (Qg): May vary within device specifications
  • Input Capacitance (Ciss): May vary within device specifications

Substitute parts must maintain identical voltage ratings and temperature operating range while meeting or exceeding current and power handling capabilities. Package compatibility within the TO-264 family is required for mechanical and thermal mounting equivalence.

Parameter Comparison

Parameter IXFK20N120 APT26F120L Unit
Manufacturer IXYS Microchip Technology -
Product Status Obsolete Active -
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 1200 1200 V
Continuous Drain Current (Id) @ 25°C 20 27 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 750 mOhm @ 500 mA, 10 V 650 mOhm @ 14 A, 10 V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4.5 V @ 8 mA 5 V @ 2.5 mA V
Gate Charge (Qg) @ Vgs 160 nC @ 10 V 300 nC @ 10 V nC
Maximum Gate Voltage (Vgs) ±30 ±30 V
Input Capacitance (Ciss) @ Vds 7400 pF @ 25 V 9670 pF @ 25 V pF
Power Dissipation (Max) 780 1135 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole -
Package TO-264AA TO-264 [L] -
RoHS Status ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) -

Engineering Selection Recommendations

The APT26F120L manufactured by Microchip Technology is a direct functional substitute for the obsolete IXFK20N120. Both devices share identical voltage ratings (1200 V Vdss), operating temperature range (-55°C to 150°C), and gate voltage specifications (±30 V). Both are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings.

The APT26F120L exceeds the electrical performance requirements of the IXFK20N120 in the following areas:

  • Continuous drain current: 27 A versus 20 A (35% higher current capability)
  • Power dissipation: 1135 W versus 780 W (45% higher thermal capacity)
  • On-resistance: 650 mOhm versus 750 mOhm (13% lower resistance)

The APT26F120L is classified as Active product status, ensuring ongoing availability and manufacturing support. Both devices utilize Through Hole mounting in compatible TO-264 package families, permitting direct mechanical and thermal substitution on existing PCB layouts.

Gate charge and input capacitance are higher in the APT26F120L (300 nC and 9670 pF respectively versus 160 nC and 7400 pF), which may affect gate drive circuit timing characteristics in high-frequency switching applications. Circuit validation is required to confirm gate drive compatibility.

Frequently Asked Questions (FAQ)

Q: Can the APT26F120L directly replace the IXFK20N120 in existing designs?

A: The APT26F120L is mechanically and electrically compatible with the IXFK20N120 for Through Hole TO-264 package mounting. Both devices share identical voltage ratings, temperature operating range, and gate voltage specifications. Gate drive circuit parameters must be evaluated due to differences in gate charge (300 nC versus 160 nC) and input capacitance (9670 pF versus 7400 pF).

Q: What are the key electrical differences between these two devices?

A: The APT26F120L provides higher current capability (27 A versus 20 A), lower on-resistance (650 mOhm versus 750 mOhm), and greater power dissipation rating (1135 W versus 780 W). These represent performance improvements over the IXFK20N120. Gate charge and input capacitance are higher in the APT26F120L, which may require gate drive circuit adjustment.

Q: Are both devices RoHS compliant?

A: Yes. Both the IXFK20N120 and APT26F120L are ROHS3 compliant and carry identical moisture sensitivity levels (MSL 1, Unlimited).

Q: What is the significance of the product status difference?

A: The IXFK20N120 is classified as Obsolete, indicating discontinued manufacturing and limited availability. The APT26F120L is classified as Active, ensuring ongoing production, availability, and manufacturer support for future orders and technical documentation.

Q: Are the TO-264AA and TO-264 [L] packages mechanically identical?

A: Both packages are members of the TO-264 family and are compatible for Through Hole mounting on standard PCB layouts. Specific package variant differences should be verified against manufacturer datasheets for precise mechanical dimensions and pin configurations.

Q: What design considerations apply when switching from IXFK20N120 to APT26F120L?

A: Gate drive circuits must accommodate the higher gate charge (300 nC) and input capacitance (9670 pF) of the APT26F120L. Switching frequency, gate resistor values, and driver output current ratings should be evaluated. The improved electrical performance (lower Rds On, higher current rating) permits operation at higher power levels or improved thermal margins in existing applications.

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