IXFK15N100Q Equivalent & Substitute Parts

Part Overview

The IXFK15N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 15A continuous drain current at 25°C. This device is packaged in a Through Hole TO-264AA configuration and is part of the HiPerFET™ series from IXYS. The product is currently classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

IXFK15N100Q

IXYSIn Stock: 1042IXFK15N100Q Datasheet

Current PartRFQ

IXTK17N120L

IXYSIn Stock: 2457IXTK17N120L Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFK15N100Q is based on the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Substitute must equal or exceed 1000V
• Continuous Drain Current (Id): Substitute must equal or exceed 15A at 25°C
• Mounting Type: Through Hole configuration required
• Package Compatibility: TO-264 series packages (TO-264AA, TO-264-3)
• FET Type: N-Channel MOSFET technology

Secondary Compatibility Parameters:

• Operating Temperature Range: Must support -55°C to 150°C
• Gate Charge (Qg): Lower values preferred for switching efficiency
• Rds On: Lower on-resistance values preferred for reduced power dissipation
• Vgs (Max): Must accommodate gate drive voltage requirements

The IXTK17N120L meets these substitution criteria with enhanced electrical performance characteristics while maintaining Through Hole TO-264 package compatibility.

Parameter Comparison

Engineering Selection Recommendations

IXTK17N120L as Primary Substitute:

The IXTK17N120L is classified as an Active product, providing long-term availability and supply chain stability compared to the Obsolete IXFK15N100Q. Both devices share identical operating temperature ranges (-55°C to 150°C) and moisture sensitivity levels (MSL 1 - Unlimited), ensuring equivalent environmental performance.

The IXTK17N120L exceeds the electrical requirements of the IXFK15N100Q across all critical parameters: Vdss is increased from 1000V to 1200V, continuous drain current is increased from 15A to 17A, and maximum power dissipation is increased from 360W to 700W. These enhancements provide design margin and improved thermal performance.

Both devices maintain Through Hole mounting configuration and TO-264 package family compatibility. The IXTK17N120L is RoHS3 Compliant and REACH Unaffected, meeting current regulatory requirements. Export classification (ECCN EAR99) and tariff codes (HTSUS 8541.29.0095) remain identical.

Gate charge is reduced in the IXTK17N120L (155 nC versus 170 nC), supporting improved switching efficiency. Maximum gate voltage rating is increased from ±20V to ±30V, providing greater gate drive flexibility.

Frequently Asked Questions (FAQ)

Q: Can the IXTK17N120L directly replace the IXFK15N100Q in existing designs?

A: The IXTK17N120L meets or exceeds all electrical and mechanical parameters required for substitution. Both devices are N-Channel MOSFETs with Through Hole TO-264 package configurations and identical operating temperature ranges. The higher voltage rating (1200V versus 1000V), increased current capability (17A versus 15A), and enhanced power dissipation (700W versus 360W) provide design margin. PCB layout and thermal management considerations remain unchanged due to identical package family.

Q: What are the key differences in gate charge between these devices?

A: The IXFK15N100Q has a maximum gate charge of 170 nC at 10V, while the IXTK17N120L has a maximum gate charge of 155 nC at 15V. The lower gate charge in the IXTK17N120L results in reduced switching losses and improved efficiency, particularly in high-frequency applications.

Q: Are there package compatibility concerns?

A: Both devices use Through Hole TO-264 package configurations. The IXFK15N100Q is specified as TO-264AA, and the IXTK17N120L is specified as TO-264. Both packages are listed as TO-264-3 variants and are mechanically compatible for PCB mounting and thermal management applications.

Q: What is the significance of the product status difference?

A: The IXFK15N100Q is classified as Obsolete, indicating discontinued production and limited long-term availability. The IXTK17N120L is classified as Active, ensuring ongoing manufacturing, supply chain availability, and technical support. For new designs or long-term production requirements, the Active status of the IXTK17N120L provides supply security.

Q: How do the on-resistance specifications compare?

A: The IXFK15N100Q specifies Rds On (Max) of 700 mOhm at 500mA and 10V gate voltage. The IXTK17N120L specifies Rds On (Max) of 900 mOhm at 8.5A and 20V gate voltage. These measurements are taken at different operating points, reflecting the different design characteristics of each device. The IXTK17N120L's higher current rating and voltage capability account for the different test conditions.

Q: Are regulatory and compliance certifications equivalent?

A: Both devices share identical export classification (ECCN EAR99) and tariff codes (HTSUS 8541.29.0095). Both have Moisture Sensitivity Level 1 (Unlimited). The IXTK17N120L additionally carries RoHS3 Compliance and REACH Unaffected certifications, meeting current regulatory requirements for electronic components.

Q: What is the input capacitance difference, and does it affect circuit design?

A: The IXFK15N100Q has input capacitance (Ciss) of 4500 pF at 25V, while the IXTK17N120L has input capacitance of 8300 pF at 25V. The higher capacitance in the IXTK17N120L reflects its enhanced current and power handling capabilities. Gate drive circuits must account for this capacitance in switching speed calculations, but the difference does not prevent substitution in properly designed gate drive circuits.