IXFK100N25 Equivalent & Substitute Parts

Part Overview

The IXFK100N25 is an N-Channel MOSFET rated for 250V drain-to-source voltage with 100A continuous drain current in a Through Hole TO-264AA package. This device is part of the IXYS HiPerFET™ series and is classified as Obsolete. Due to its obsolete status, equivalent substitute parts with active product availability are necessary for new designs and ongoing production requirements. The substitute part maintains the same package form factor and core electrical characteristics while offering enhanced performance specifications and active manufacturer support.

Substiute Parts

IXFK100N25
IXYSIn Stock: 732IXFK100N25 Datasheet
IXFK100N25
Current Part
IXFK140N30P
IXYSIn Stock: 1696IXFK140N30P Datasheet
IXFK140N30P
Direct

Key Parameters

Parameter IXFK100N25
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 27mOhm @ 50A, 10V
Power Dissipation (Max) 560W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-264AA
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IXFK100N25 is based on the following critical parameters that must remain compatible:

Package Compatibility: Both the main part and substitute must use the TO-264AA Through Hole package to ensure mechanical and thermal interface compatibility with existing PCB designs.

Electrical Characteristics: The substitute part must support N-Channel MOSFET technology with operating temperature range of -55°C to 150°C (TJ). The drain-to-source voltage rating and continuous drain current must meet or exceed the application requirements of the original part.

Gate Drive Voltage: Both parts operate with a maximum gate-source voltage (Vgs Max) of ±20V and require 10V drive voltage for on-state resistance specification.

Thermal Performance: The substitute must provide adequate power dissipation capability for the intended application thermal environment.

The IXFK140N30P qualifies as a direct substitute based on these parameters while offering improved electrical performance and active product status.

Parameter Comparison

Parameter IXFK100N25 IXFK140N30P Compatibility Notes
FET Type N-Channel N-Channel Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
Drain to Source Voltage (Vdss) 250 V 300 V Substitute rated higher; compatible for 250V applications
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 140A (Tc) Substitute rated higher; compatible for 100A applications
Drive Voltage (Max Rds On) 10V 10V Identical
Rds On (Max) @ Id, Vgs 27mOhm @ 50A, 10V 24mOhm @ 70A, 10V Substitute has lower on-resistance; improved performance
Vgs(th) (Max) @ Id 4V @ 8mA 5V @ 8mA Substitute threshold slightly higher; within acceptable range
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 185 nC @ 10 V Substitute has lower gate charge; faster switching
Vgs (Max) ±20V ±20V Identical
Input Capacitance (Ciss) (Max) @ Vds 9100 pF @ 25 V 14800 pF @ 25 V Substitute has higher input capacitance
Power Dissipation (Max) 560W (Tc) 1040W (Tc) Substitute rated higher; improved thermal capability
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Identical
Mounting Type Through Hole Through Hole Identical
Package / Case TO-264AA TO-264AA Identical; direct mechanical replacement
Product Status Obsolete Active Substitute has active manufacturer support
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical
REACH Status REACH Unaffected REACH Unaffected Identical

Engineering Selection Recommendations

The IXFK140N30P is a qualified substitute for the IXFK100N25 based on the following engineering criteria:

Package Compatibility: Both devices use the TO-264AA Through Hole package, enabling direct mechanical and thermal interface compatibility without PCB redesign.

Electrical Performance: The IXFK140N30P exceeds the electrical requirements of the IXFK100N25 across all critical parameters. The higher voltage rating (300V vs. 250V) and current rating (140A vs. 100A) provide design margin for the original application. The lower on-resistance (24mOhm vs. 27mOhm) and reduced gate charge (185nC vs. 300nC) deliver improved efficiency and switching performance.

Product Status and Compliance: The IXFK140N30P maintains Active product status with full manufacturer support, ensuring long-term availability and supply chain stability. Both parts share identical REACH compliance status and moisture sensitivity classification, maintaining regulatory and environmental compliance requirements.

Thermal Capability: The substitute part provides nearly double the power dissipation rating (1040W vs. 560W), offering enhanced thermal performance for demanding applications.

The IXFK140N30P is suitable for direct substitution in applications originally designed for the IXFK100N25 where the enhanced electrical and thermal specifications do not create design conflicts.

Frequently Asked Questions (FAQ)

Q: Can the IXFK140N30P be used as a direct replacement for the IXFK100N25 in existing designs?

A: Yes. Both devices share the TO-264AA package and identical gate drive voltage requirements (±20V, 10V drive). The IXFK140N30P meets or exceeds all electrical specifications of the IXFK100N25, including voltage rating, current rating, and thermal performance. No PCB modifications are required for mechanical or thermal interface compatibility.

Q: What are the key differences between these two parts?

A: The IXFK140N30P provides higher voltage rating (300V vs. 250V), higher current rating (140A vs. 100A), lower on-resistance (24mOhm vs. 27mOhm), lower gate charge (185nC vs. 300nC), and higher power dissipation capability (1040W vs. 560W). The IXFK140N30P also maintains Active product status, whereas the IXFK100N25 is Obsolete.

Q: Will the higher input capacitance of the IXFK140N30P affect circuit performance?

A: The IXFK140N30P has higher input capacitance (14800pF vs. 9100pF). This parameter affects gate drive circuit design and switching speed. Circuit designers must evaluate gate drive capability to ensure adequate drive current for the substitute part's input capacitance at the intended switching frequency.

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both parts share identical REACH compliance status (REACH Unaffected), moisture sensitivity level (MSL 1 - Unlimited), and ECCN classification (EAR99). Regulatory and environmental compliance requirements are equivalent.

Q: What is the significance of the gate charge difference?

A: The IXFK140N30P has lower gate charge (185nC vs. 300nC), which reduces the energy required to switch the device and enables faster switching transitions. This can improve overall circuit efficiency and reduce switching losses in high-frequency applications.

Q: Is the TO-264AA package identical for both parts?

A: Yes. Both the IXFK100N25 and IXFK140N30P use the TO-264AA Through Hole package with identical mechanical dimensions and thermal interface characteristics. No package-related design changes are necessary for substitution.

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