IXFH9N80 N-Channel 800V 9A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH9N80 is an N-Channel 800V 9A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is rated for 180W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently obsolete, making equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	9	A
Rds On (Max) @ 500mA, 10V	900	mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA	4.5	V
Gate Charge (Qg) @ 10V	130	nC
Input Capacitance (Ciss) @ 25V	2600	pF
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247AD	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFH9N80 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 800V
Continuous Drain Current (Id): Must equal or exceed 9A at 25°C
Gate Drive Voltage: Must support 10V operation
Operating Temperature Range: Must span -55°C to 150°C
Package Type: Through-hole mounting required (TO-247 variants acceptable)
RoHS Compliance: ROHS3 Compliant status required

Secondary Compatibility Factors:

Rds On characteristics at specified gate voltage
Gate threshold voltage (Vgs(th)) compatibility
Gate charge and input capacitance for circuit timing
Power dissipation capability for thermal management

Substitute parts are grouped into two categories: Manufacturer-Recommended Equivalents (direct functional replacements from IXYS) and Similar Cross-Manufacturer Alternatives (functionally compatible parts from other manufacturers meeting all primary criteria).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm/Ohm)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Package	Status
IXFH9N80	IXYS	800	9	900 mOhm	130	2600	180	TO-247AD	Obsolete
IXFH10N80P	IXYS	800	10	1.1 Ohm	40	2050	300	TO-247AD	Active
IXFH12N80P	IXYS	800	12	850 mOhm	51	2800	360	TO-247AD	Active
IXFH14N85X	IXYS	850	14	550 mOhm	30	1043	460	TO-247	Active
STW10NK80Z	STMicroelectronics	800	9	900 mOhm	72	2180	160	TO-247-3	Active
STW12NK80Z	STMicroelectronics	800	10.5	750 mOhm	87	2620	190	TO-247-3	Active
STW8NK80Z	STMicroelectronics	800	6.2	1.5 Ohm	46	1320	140	TO-247-3	Active
STP10NK80Z	STMicroelectronics	800	9	900 mOhm	72	2180	190	TO-220	Active
STW9N80K5	STMicroelectronics	800	7	900 mOhm	12	340	110	TO-247-3	Active
FQAF13N80	onsemi	800	8	750 mOhm	88	3500	120	TO-3PF	Obsolete
IRFPE50PBF	Vishay Siliconix	800	7.8	1.2 Ohm	200	3100	190	TO-247AC	Active

Engineering Selection Recommendations

Recommended Primary Substitute: IXFH10N80P

The IXFH10N80P is the manufacturer-recommended equivalent from IXYS. It maintains the same 800V Vdss rating and exceeds the 9A continuous drain current requirement at 10A. The part is in Active product status with ROHS3 compliance and unlimited moisture sensitivity rating. The TO-247AD package provides direct mechanical compatibility. Enhanced power dissipation (300W vs. 180W) and improved gate charge characteristics (40nC vs. 130nC) provide superior thermal and switching performance margins.

Alternative Equivalent: STW10NK80Z

The STW10NK80Z from STMicroelectronics provides electrical equivalence with identical 800V/9A ratings and matching 900mOhm Rds On characteristics. Active product status and ROHS3 compliance are confirmed. The TO-247-3 package is mechanically compatible with the original TO-247AD. This option is suitable where STMicroelectronics supply chain preference exists.

Higher Current Capability Options:

For applications requiring increased current margin, IXFH12N80P (12A, 360W) and STW12NK80Z (10.5A, 190W) provide enhanced current ratings while maintaining 800V Vdss and TO-247 package compatibility. These parts are appropriate for designs with thermal headroom or future current scaling requirements.

Package Variant Consideration:

STP10NK80Z provides identical electrical specifications (800V, 9A, 900mOhm) in a TO-220 package. This option is suitable only if PCB layout and thermal management accommodate the different pin configuration and reduced thermal performance of the TO-220 package compared to TO-247.

Not Recommended for Direct Substitution:

STW8NK80Z (6.2A) and STW9N80K5 (7A) fall below the 9A minimum requirement and are unsuitable for direct replacement. FQAF13N80 (8A, TO-3PF) and IRFPE50PBF (7.8A, TO-247AC) similarly do not meet the 9A continuous current specification and introduce package compatibility complications.

Frequently Asked Questions (FAQ)

Q: Can the IXFH10N80P directly replace the IXFH9N80 without circuit modification?

A: Yes. The IXFH10N80P meets all primary substitution criteria: 800V Vdss, 10A continuous current (exceeding the 9A requirement), compatible TO-247AD package, and identical operating temperature range. No circuit redesign is required. The improved specifications provide additional performance margin.

Q: What is the difference between TO-247AD and TO-247-3 packages?

A: Both are through-hole TO-247 variants with three leads (Gate, Drain, Source). The TO-247AD and TO-247-3 designations refer to minor manufacturing variations but are mechanically and electrically interchangeable in standard PCB layouts. Pin assignments and thermal characteristics remain equivalent.

Q: Why is STW8NK80Z not listed as a suitable substitute despite being from STMicroelectronics?

A: The STW8NK80Z is rated for 6.2A continuous drain current, which falls below the IXFH9N80 specification of 9A. Using an undersized device violates the primary substitution criterion and creates risk of thermal stress and premature failure under rated load conditions.

Q: Is the IXFH14N85X a valid substitute despite the higher 850V Vdss rating?

A: The IXFH14N85X exceeds all primary electrical requirements (850V > 800V, 14A > 9A) and maintains TO-247 package compatibility. However, the higher voltage rating and different series (Ultra X vs. HiPerFET™) introduce different gate charge and capacitance characteristics. This part is suitable only if the application circuit is verified to accommodate the modified switching behavior.

Q: Can I use the STP10NK80Z (TO-220 package) as a substitute?

A: The STP10NK80Z provides electrical equivalence (800V, 9A, 900mOhm Rds On) but uses a TO-220 package instead of TO-247. Substitution is possible only if the PCB layout is redesigned to accommodate the different pin spacing and thermal pad configuration. The TO-220 package has reduced thermal performance compared to TO-247, requiring verification of thermal management adequacy.

Q: What does "Active" product status mean for substitution purposes?

A: Active status indicates the part is currently manufactured and available from the supplier with ongoing production support. Obsolete parts like the IXFH9N80 have ended production and may have limited inventory. Substituting with Active-status parts ensures long-term supply chain reliability and design continuity.

Q: Are all listed substitutes ROHS3 compliant?

A: Yes. All substitute parts listed in this reference meet ROHS3 compliance requirements, matching the original IXFH9N80 environmental and regulatory status. This ensures compatibility with procurement specifications and end-product certifications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFH9N80 requires 130nC, while the IXFH10N80P requires only 40nC. Lower gate charge reduces switching losses and allows faster switching speeds. If the gate driver circuit is optimized for the original 130nC specification, the lower-charge substitute will switch faster, potentially requiring driver circuit verification for compatibility.

Q: Can I mix different substitute parts in a multi-device application?

A: No. In parallel or series configurations, all MOSFETs must have identical electrical characteristics to ensure balanced current distribution and voltage sharing. Use only one substitute part number throughout the design to maintain predictable performance and reliability.

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