IXFH8N80 Equivalent & Substitute Parts

Part Overview

The IXFH8N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 8A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247AD package and is part of the HiPerFET™ series. The component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package variations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	8	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.1	Ohm @ 4A, 10V
Gate Threshold Voltage Vgs(th) (Max)	4.5	V @ 2.5mA
Gate Charge (Qg) (Max)	130	nC @ 10V
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFH8N80 is determined by strict equivalence across the following critical electrical parameters:

Mandatory Equivalence Criteria:

Drain-to-Source Voltage (Vdss): 800V minimum
FET Type: N-Channel MOSFET
Mounting Type: Through Hole
Package Compatibility: TO-247 family packages

Functional Compatibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 8A at 25°C
Gate Threshold Voltage (Vgs(th)): Within specified range
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required

The STW10NK80Z from STMicroelectronics meets all mandatory criteria and functional compatibility requirements. Both devices operate at 800V Vdss, support through-hole mounting in TO-247 packages, and maintain identical operating temperature ranges. The substitute part provides higher continuous drain current (9A versus 8A) and improved gate charge characteristics, making it functionally suitable for applications designed around the IXFH8N80.

Parameter Comparison

Parameter	IXFH8N80	STW10NK80Z	Unit
Manufacturer	IXYS	STMicroelectronics	—
Product Status	Obsolete	Active	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	800	800	V
Continuous Drain Current (Id) @ 25°C	8	9	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	1.1 @ 4A, 10V	0.9 @ 4.5A, 10V	Ohm
Gate Threshold Voltage Vgs(th) (Max)	4.5 @ 2.5mA	4.5 @ 100µA	V
Gate Charge (Qg) (Max)	130	72	nC @ 10V
Input Capacitance (Ciss) (Max)	2600	2180	pF @ 25V
Power Dissipation (Max)	180	160	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-247AD	TO-247-3	—
Mounting Type	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

Primary Substitute: STW10NK80Z

The STW10NK80Z is the qualified substitute for the obsolete IXFH8N80. Selection of this alternative is based on the following engineering factors:

Product Status Alignment: The STW10NK80Z maintains active product status with STMicroelectronics, ensuring continued availability and manufacturing support. The IXFH8N80 is classified as obsolete, creating supply chain risk for new designs and ongoing production.

Electrical Equivalence: Both devices operate at identical 800V Vdss ratings and support the same -55°C to 150°C operating temperature range. The STW10NK80Z provides 9A continuous drain current, exceeding the 8A specification of the IXFH8N80, ensuring adequate current capacity for existing circuit designs.

Compliance Certification: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for industrial and commercial applications.

Package Compatibility: Both devices use TO-247 family through-hole packages. The IXFH8N80 uses TO-247AD variant while the STW10NK80Z uses TO-247-3 variant. These packages share identical pin configurations and mounting footprints, enabling direct board-level substitution without layout modifications.

Performance Characteristics: The STW10NK80Z demonstrates improved gate charge characteristics (72 nC versus 130 nC) and lower on-state resistance (0.9 Ohm versus 1.1 Ohm), resulting in reduced switching losses and improved thermal performance in high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the STW10NK80Z directly replace the IXFH8N80 in existing circuit designs?

A: Yes. Both devices share identical 800V Vdss ratings, -55°C to 150°C operating temperature ranges, and TO-247 family through-hole packages. The STW10NK80Z provides higher continuous drain current (9A versus 8A), making it functionally compatible with designs specified for the IXFH8N80. No circuit modifications are required.

Q: What are the differences between TO-247AD and TO-247-3 packages?

A: Both TO-247AD and TO-247-3 are three-terminal through-hole packages with identical pin configurations and mounting footprints. The primary difference is internal construction and thermal characteristics. Both packages are mechanically and electrically interchangeable for board-level applications.

Q: Does the lower gate charge of the STW10NK80Z affect circuit operation?

A: The STW10NK80Z gate charge specification (72 nC) is lower than the IXFH8N80 (130 nC). Lower gate charge reduces switching losses and improves efficiency in gate-driven circuits. This represents an improvement over the original specification and does not create compatibility issues.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IXFH8N80 and STW10NK80Z are ROHS3 compliant and REACH unaffected, meeting regulatory requirements for industrial and commercial applications.

Q: Why is the IXFH8N80 classified as obsolete?

A: The IXFH8N80 is an older generation device from the IXYS HiPerFET™ series. IXYS has transitioned product lines, and this part number is no longer in active production. The STW10NK80Z from STMicroelectronics represents the current generation equivalent with improved performance characteristics.

Q: What is the impact of the 20W lower power dissipation rating on the STW10NK80Z?

A: The STW10NK80Z has a maximum power dissipation rating of 160W compared to 180W for the IXFH8N80. For applications operating within the 8A continuous current specification of the original part, this difference does not create thermal constraints. Applications requiring sustained operation above 8A should verify thermal performance against specific circuit conditions.

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