IXFH88N30P N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH88N30P is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage with 88A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-247AD through-hole package. The component is currently in active production status with robust inventory availability.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compatibility with the through-hole mounting requirement and industry compliance standards.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	88	A
On-State Resistance (Rds On Max) @ Id, Vgs	40 mOhm @ 44A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 4mA
Gate Charge (Qg Max) @ Vgs	180	nC @ 10V
Power Dissipation (Max)	600	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IXFH88N30P is evaluated based on the following critical electrical and mechanical parameters:

Voltage Rating (Vdss): The substitute must support the same or higher drain-to-source voltage to ensure safe operation in the intended circuit.

Current Rating (Id): The substitute must deliver equal or greater continuous drain current at 25°C to maintain circuit performance.

On-State Resistance (Rds On): The substitute must exhibit comparable or lower on-state resistance to prevent thermal runaway and excessive power dissipation.

Gate Charge (Qg): The substitute must have gate charge specifications compatible with the drive circuit.

Mounting and Package: The substitute must use through-hole mounting in a TO-247 package variant to ensure mechanical compatibility.

Compliance and Status: The substitute must maintain active product status and equivalent RoHS3 compliance.

The IRFP4229PBF does not meet the substitution criteria for the IXFH88N30P due to significant deviations in voltage rating (250V vs. 300V) and current rating (44A vs. 88A), which fall outside acceptable tolerance ranges for direct substitution.

Parameter Comparison

Parameter	IXFH88N30P	IRFP4229PBF	Compatibility Status
Manufacturer	IXYS	Infineon Technologies	Different
FET Type	N-Channel	N-Channel	Compatible
Drain to Source Voltage (Vdss)	300 V	250 V	Not Equivalent
Continuous Drain Current (Id) @ 25°C	88 A	44 A	Not Equivalent
Drive Voltage (Max Rds On)	10 V	10 V	Compatible
Rds On (Max) @ Id, Vgs	40 mOhm @ 44A, 10V	46 mOhm @ 26A, 10V	Different Test Conditions
Gate Threshold Voltage (Vgs(th) Max) @ Id	5 V @ 4mA	5 V @ 250µA	Different Test Conditions
Gate Charge (Qg Max) @ Vgs	180 nC @ 10V	110 nC @ 10V	Different
Power Dissipation (Max)	600 W	310 W	Not Equivalent
Operating Temperature Range	-55 to 150 °C	-40 to 175 °C	Overlapping
Mounting Type	Through Hole	Through Hole	Compatible
Package / Case	TO-247-3	TO-247-3	Compatible
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Compatible

Engineering Selection Recommendations

The IXFH88N30P is an active-status component with full RoHS3 compliance and REACH unaffected designation. Both the main part and identified substitute maintain equivalent regulatory compliance.

The IRFP4229PBF, while also active and compliant, exhibits critical parameter deviations that preclude it from serving as a direct substitute. The 250V voltage rating is 50V lower than the IXFH88N30P specification, and the 44A current rating represents a 50% reduction from the 88A rating of the main part. These differences result in substantially different power dissipation capabilities (310W vs. 600W) and thermal performance characteristics.

For applications requiring the full electrical specifications of the IXFH88N30P, direct substitution with the IRFP4229PBF is not supported. Component selection must be based on the specific circuit requirements for voltage, current, and power dissipation.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4229PBF replace the IXFH88N30P in my circuit?

A: No. The IRFP4229PBF has a maximum drain-to-source voltage of 250V compared to the IXFH88N30P's 300V rating, and a continuous drain current of 44A versus 88A. These are fundamental electrical differences that make direct substitution unsuitable.

Q: Are both parts available in the same package?

A: Both parts use TO-247-3 through-hole packages. However, package compatibility alone does not establish electrical equivalence. The IXFH88N30P uses the TO-247AD variant while the IRFP4229PBF uses TO-247AC, representing different pin configurations within the TO-247 family.

Q: What is the significance of the gate charge difference between these parts?

A: The IXFH88N30P has a gate charge of 180 nC at 10V, while the IRFP4229PBF has 110 nC at 10V. Gate charge affects switching speed and drive circuit requirements. The lower gate charge of the IRFP4229PBF indicates faster switching characteristics but does not compensate for the reduced voltage and current ratings.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the IXFH88N30P and IRFP4229PBF are RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Compliance equivalence does not establish electrical substitutability.

Q: What is the operating temperature range difference?

A: The IXFH88N30P operates from -55°C to 150°C, while the IRFP4229PBF operates from -40°C to 175°C. The IRFP4229PBF has a wider upper temperature range, but this does not offset its lower voltage and current ratings.

Q: Why is on-state resistance measured at different current levels for each part?

A: Rds On specifications are provided at the rated continuous drain current for each device. The IXFH88N30P is measured at 44A (half its 88A rating) while the IRFP4229PBF is measured at 26A (half its 44A rating). Direct resistance comparison requires normalization to equivalent operating conditions.

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