IXFH88N20Q N-Channel MOSFET 200V 88A Equivalent & Substitute Parts

Part Overview

The IXFH88N20Q is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 88A continuous drain current at 25°C. This device is packaged in a Through Hole TO-247AD configuration and is part of the HiPerFET™ Q Class series. The IXFH88N20Q is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating available packaging options.

Substiute Parts

IXFH88N20Q
IXYSIn Stock: 5715IXFH88N20Q Datasheet
IXFH88N20Q
Current Part
IRFP4227PBF
Infineon TechnologiesIn Stock: 53297IRFP4227PBF Datasheet
IRFP4227PBF
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STW75NF20
STMicroelectronicsIn Stock: 1453STW75NF20 Datasheet
STW75NF20
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 88 A (Tc)
Rds On (Max) @ Id, Vgs 30 mOhm @ 44A, 10V mOhm
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10V
Power Dissipation (Max) 500 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole
Input Capacitance (Ciss) @ Vds 4150 pF @ 25V
Vgs (Max) ±30 V

Substitute Part Grouping Explanation

Substitute parts for the IXFH88N20Q are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Mandatory Matching Criteria:

  • Drain to Source Voltage (Vdss): 200V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET Metal Oxide (exact match required)
  • Package Type: TO-247 family (mechanical compatibility)
  • Mounting Type: Through Hole (exact match required)

Performance Compatibility Criteria:

  • Current - Continuous Drain (Id): Substitute must meet or exceed 88A specification
  • Rds On (Max): Substitute must not exceed 30 mOhm at rated conditions
  • Power Dissipation (Max): Substitute must support minimum 500W thermal capability
  • Operating Temperature Range: Substitute must encompass or exceed -55°C to 150°C range
  • Gate Charge (Qg): Lower values indicate improved switching performance

The identified substitute parts IRFP4227PBF and STW75NF20 meet the mandatory voltage and package criteria. However, both substitutes present trade-offs in current capacity and thermal performance relative to the main part specification.

Parameter Comparison

Parameter IXFH88N20Q IRFP4227PBF STW75NF20 Unit
Manufacturer IXYS Infineon Technologies STMicroelectronics
Drain to Source Voltage (Vdss) 200 200 200 V
Current - Continuous Drain (Id) @ 25°C 88 65 75 A (Tc)
Rds On (Max) @ Id, Vgs 30 @ 44A, 10V 25 @ 46A, 10V 34 @ 37A, 10V mOhm
Gate Charge (Qg) (Max) @ Vgs 146 98 84 nC @ 10V
Power Dissipation (Max) 500 330 190 W (Tc)
Operating Temperature Range -55 to 150 -40 to 175 -50 to 150 °C (TJ)
Input Capacitance (Ciss) @ Vds 4150 4600 3260 pF @ 25V
Vgs (Max) ±30 ±30 ±20 V
Package Type TO-247AD TO-247AC TO-247-3
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRFP4227PBF (Infineon Technologies): This substitute is an active product with ROHS3 compliance and extended upper operating temperature to 175°C. The IRFP4227PBF provides lower gate charge (98 nC vs. 146 nC), indicating improved switching characteristics. However, continuous drain current is reduced to 65A and power dissipation capability is limited to 330W. This part is suitable for applications where the 88A current specification can be reduced or where thermal management is enhanced through design modifications. The TO-247AC package is mechanically compatible with TO-247AD footprints.

STW75NF20 (STMicroelectronics): This substitute is an active product with ROHS3 compliance and represents the STripFET™ series. The STW75NF20 provides 75A continuous drain current, closer to the original 88A specification, but with reduced power dissipation (190W) and lower gate charge (84 nC). The Vgs (Max) is limited to ±20V compared to ±30V on the main part. This part is suitable for applications where current requirements fall between 65A and 75A and where thermal dissipation is managed within 190W limits. The TO-247-3 package is directly compatible with the original TO-247-3 specification.

Selection Basis: Both substitutes maintain the 200V voltage rating and N-Channel MOSFET technology. Selection between substitutes depends on application current requirements and thermal budget. The IRFP4227PBF offers superior switching performance through lower gate charge. The STW75NF20 provides higher current capacity relative to the IRFP4227PBF but with lower thermal capability. Both parts are active products with current manufacturing support and full compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4227PBF directly replace the IXFH88N20Q in all applications?

A: The IRFP4227PBF is electrically compatible at the 200V voltage rating and N-Channel MOSFET technology level. However, the reduced continuous drain current (65A vs. 88A) and power dissipation (330W vs. 500W) require verification that application current demands do not exceed 65A and thermal dissipation remains within 330W. The TO-247AC package is mechanically compatible with TO-247AD footprints.

Q: What are the key differences between the STW75NF20 and IRFP4227PBF substitutes?

A: The STW75NF20 provides higher continuous drain current (75A vs. 65A) but lower power dissipation capability (190W vs. 330W). The STW75NF20 has lower gate charge (84 nC vs. 98 nC) and lower input capacitance (3260 pF vs. 4600 pF), resulting in faster switching. The STW75NF20 limits Vgs (Max) to ±20V, compared to ±30V on both the main part and IRFP4227PBF. Selection depends on whether current capacity or thermal capability is the limiting factor in the application.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both IRFP4227PBF and STW75NF20 are ROHS3 compliant, matching the compliance status of the obsolete IXFH88N20Q. Both parts are also REACH unaffected and carry EAR99 ECCN classification.

Q: What is the impact of different gate charge values on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFH88N20Q requires 146 nC, while IRFP4227PBF requires 98 nC and STW75NF20 requires 84 nC. Lower gate charge reduces switching losses and allows faster switching speeds, which can improve overall circuit efficiency. However, gate drive circuits must be capable of supplying the required charge within the specified time frame.

Q: Can package differences between TO-247AD, TO-247AC, and TO-247-3 affect PCB layout?

A: All three package variants are TO-247 family devices with identical pin configurations and mechanical footprints suitable for Through Hole mounting. The primary difference is internal lead frame design, which does not affect PCB layout compatibility. Existing TO-247 footprints accommodate all three variants without modification.

Q: What is the significance of the operating temperature range differences?

A: The IXFH88N20Q operates from -55°C to 150°C. The IRFP4227PBF extends the upper limit to 175°C, providing additional thermal margin in high-temperature environments. The STW75NF20 operates from -50°C to 150°C, which is slightly narrower at the lower temperature limit but matches the upper limit of the original part. Application requirements determine whether extended temperature range is necessary.

Q: Why is the IXFH88N20Q classified as obsolete?

A: Obsolete status indicates the part is no longer manufactured by IXYS and is not available through standard distribution channels. The substitute parts IRFP4227PBF and STW75NF20 are active products with ongoing manufacturing support, ensuring long-term availability and supply chain continuity.

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