IXFH86N30T Equivalent & Substitute Parts

Part Overview

The IXFH86N30T is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage with 86A continuous drain current at 25°C. This device operates in the HiPerFET™ Trench technology series and is housed in a TO-247AD through-hole package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compatible mechanical packaging and thermal characteristics. Substitution becomes necessary due to inventory availability, supply chain constraints, or design optimization requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	86	A
RDS(on) Max @ 43A, 10V	43	mOhm
Gate Charge (Qg) Max @ 10V	180	nC
Power Dissipation Max	860	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247AD	Through Hole
FET Type	N-Channel	—

Substitute Part Grouping Explanation

Substitute parts for the IXFH86N30T are identified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

FET Type: N-Channel MOSFET technology
Package Category: TO-247 through-hole mounting (mechanical compatibility)
Drain-to-Source Voltage (Vdss): Rated equal to or greater than 300V
Continuous Drain Current (Id): Rated equal to or greater than 86A at 25°C
RDS(on) Performance: Maximum on-resistance within acceptable operating margins
Gate Charge (Qg): Switching characteristics suitable for equivalent drive requirements
Power Dissipation: Thermal capability sufficient for application demands
Compliance: RoHS3 compliant, REACH unaffected status

The IRFP4229PBF is evaluated as a substitute candidate; however, critical parameter deviations exist that must be assessed for specific application requirements.

Parameter Comparison

Parameter	IXFH86N30T	IRFP4229PBF	Unit
Manufacturer	IXYS	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	300	250	V
Continuous Drain Current (Id) @ 25°C	86	44	A
RDS(on) Max @ Specified Conditions	43 @ 43A, 10V	46 @ 26A, 10V	mOhm
Gate Charge (Qg) Max @ 10V	180	110	nC
Power Dissipation Max	860	310	W
Operating Temperature Range	-55 to 150	-40 to 175	°C
Package Type	TO-247AD	TO-247AC	—
Mounting Type	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

IXFH86N30T (Primary Part): The IXFH86N30T remains the specified component for applications requiring the full rated performance envelope. This part is Active in product status with 8,625 pieces in stock inventory. Full RoHS3 compliance and unlimited moisture sensitivity rating support deployment in regulated environments. The 300V Vdss rating and 86A continuous current capability establish the baseline performance requirement.

IRFP4229PBF (Substitute Candidate): The IRFP4229PBF is an Active product from Infineon Technologies with 26,400 pieces in stock. This part maintains RoHS3 compliance and unlimited moisture sensitivity rating. However, significant electrical parameter deviations exist:

Vdss is reduced to 250V (50V lower than primary part)
Continuous drain current is reduced to 44A (51.2% of primary part rating)
Power dissipation capability is reduced to 310W (36% of primary part rating)
Gate charge is reduced to 110nC (61% of primary part rating)

The IRFP4229PBF is suitable only for applications where the reduced voltage, current, and power ratings are acceptable. Package variants (TO-247AC versus TO-247AD) are mechanically compatible for through-hole mounting but represent different pin configurations.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4229PBF directly replace the IXFH86N30T in all applications?

A: No. The IRFP4229PBF has significantly reduced electrical ratings. The 250V Vdss is 50V lower, the 44A continuous current is 51.2% of the primary part, and power dissipation is 36% of the primary part. Substitution is valid only when application requirements fall within the IRFP4229PBF parameter envelope.

Q: Are the TO-247AD and TO-247AC packages mechanically interchangeable?

A: Both packages are through-hole TO-247 variants with three leads. Pin configurations differ between AD and AC variants. Physical mounting is compatible, but pin assignment must be verified against specific PCB layout and schematic requirements.

Q: What is the impact of the 50V voltage rating difference?

A: The IXFH86N30T is rated for 300V maximum drain-to-source voltage, while the IRFP4229PBF is rated for 250V. Applications operating above 250V require the primary part. Applications with maximum operating voltages at or below 250V may use the substitute.

Q: How do the gate charge differences affect circuit design?

A: The IXFH86N30T has 180nC gate charge versus 110nC for the IRFP4229PBF. Lower gate charge reduces driver power requirements and switching losses. The primary part requires higher gate drive capability but provides improved switching performance in high-frequency applications.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IXFH86N30T and IRFP4229PBF are RoHS3 compliant with REACH unaffected status and unlimited moisture sensitivity rating (MSL 1).

Q: What inventory considerations apply to substitution?

A: The IXFH86N30T has 8,625 pieces in stock. The IRFP4229PBF has 26,400 pieces in stock. Higher availability of the substitute part may support supply chain objectives when electrical parameter reductions are acceptable.

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