IXFH80N20Q N-Channel MOSFET 200V 80A TO-247AD Equivalent & Substitute Parts

Part Overview

The IXFH80N20Q is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage and 80A continuous drain current in the TO-247AD package. This device is part of the HiPerFET™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Substiute Parts

IXFH80N20Q

IXYSIn Stock: 3590IXFH80N20Q Datasheet

Current PartRFQ

IXFH80N25X3

IXYSIn Stock: 2279IXFH80N25X3 Datasheet

DirectRFQ

IRFP4227PBF

Infineon TechnologiesIn Stock: 53297IRFP4227PBF Datasheet

SimilarRFQ

STW75NF20

STMicroelectronicsIn Stock: 1453STW75NF20 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFH80N20Q is determined by the following critical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must be equal to or greater than 200V
• Continuous Drain Current (Id): Must be equal to or greater than 80A at 25°C
• Package Type: TO-247 family (TO-247AD, TO-247AC, TO-247-3)
• Mounting Type: Through Hole
• FET Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Factors:

• Gate Charge (Qg): Lower values indicate faster switching performance
• On-State Resistance (Rds On): Lower values reduce conduction losses
• Power Dissipation Rating: Must support thermal requirements of the application
• Operating Temperature Range: Must encompass application requirements

Substitute parts are grouped into two categories: direct equivalents (matching voltage and current ratings) and similar alternatives (meeting or exceeding voltage and current specifications with acceptable parameter variations).

Parameter Comparison

Engineering Selection Recommendations

IXFH80N25X3 (IXYS)

This part is the primary direct equivalent for the IXFH80N20Q. It maintains the same manufacturer (IXYS), identical continuous drain current rating (80A), and compatible TO-247 package family. The IXFH80N25X3 features a higher Vdss rating (250V versus 200V), providing enhanced voltage margin. The device demonstrates superior on-state resistance (16 mOhm versus 28 mOhm) and significantly lower gate charge (83 nC versus 180 nC), resulting in improved switching efficiency and reduced drive circuit stress. The part is classified as Active with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring long-term availability and environmental compliance. Operating temperature range matches the original part (-55°C to 150°C).

IRFP4227PBF (Infineon Technologies)

This part provides a substitute option with matching Vdss (200V) and compatible TO-247AC package. The continuous drain current is rated at 65A, which is lower than the original 80A specification. The IRFP4227PBF is classified as Active with ROHS3 compliance and extended operating temperature range (-40°C to 175°C). On-state resistance is 25 mOhm, and gate charge is 98 nC. This part is suitable for applications where the 65A current rating is sufficient and where the extended temperature range provides operational advantage. Higher inventory availability (53,200 pieces) supports supply chain continuity.

STW75NF20 (STMicroelectronics)

This part offers a substitute with matching Vdss (200V) and compatible TO-247-3 package. The continuous drain current is rated at 75A, approaching the original 80A specification. The STW75NF20 is classified as Active with ROHS3 compliance. On-state resistance is 34 mOhm, and gate charge is 84 nC. Power dissipation rating is 190W, which is lower than the original 360W specification. This part is suitable for applications with moderate thermal requirements and where the 75A current rating is acceptable. Operating temperature range is -50°C to 150°C.

Selection Basis:

All substitute parts are selected based on product status (Active versus Obsolete), RoHS3 compliance certification, and electrical parameter compatibility within the TO-247 package family. The IXFH80N25X3 is recommended as the primary replacement due to superior electrical performance and exact current rating match. Alternative selections depend on specific application requirements regarding current capacity, thermal dissipation, and supply chain availability.

Frequently Asked Questions (FAQ)

Q: Can the IXFH80N25X3 directly replace the IXFH80N20Q in all applications?

A: The IXFH80N25X3 is electrically compatible with the IXFH80N20Q for applications designed for 200V operation. The higher Vdss rating (250V) provides additional voltage margin and does not create compatibility issues. The improved electrical characteristics (lower Rds On and gate charge) may enhance circuit performance. Physical package compatibility exists within the TO-247 family, though mounting hole alignment should be verified for the specific PCB design.

Q: What is the primary difference between the IXFH80N20Q and IXFH80N25X3?

A: The IXFH80N25X3 features a higher drain-to-source voltage rating (250V versus 200V), lower on-state resistance (16 mOhm versus 28 mOhm), and significantly lower gate charge (83 nC versus 180 nC). Both devices maintain the same 80A continuous drain current rating and -55°C to 150°C operating temperature range. The IXFH80N25X3 is an active product, while the IXFH80N20Q is obsolete.

Q: Why is the IRFP4227PBF rated for only 65A when the original part is 80A?

A: The IRFP4227PBF is a different device from a different manufacturer (Infineon Technologies) with different internal design characteristics. While it matches the 200V voltage rating and TO-247 package family, the continuous drain current specification is 65A. This part is suitable for applications where the lower current rating is acceptable or where the extended operating temperature range (-40°C to 175°C) provides operational advantage.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFH80N25X3, IRFP4227PBF, and STW75NF20 are all certified as ROHS3 compliant. The original IXFH80N20Q does not specify RoHS compliance status. All substitute parts are classified as REACH Unaffected or REACH Compliant, supporting environmental regulatory requirements.

Q: What is the significance of gate charge (Qg) differences between these parts?

A: Gate charge determines the amount of charge required to switch the MOSFET on and off. Lower gate charge values (IXFH80N25X3 at 83 nC, STW75NF20 at 84 nC) reduce drive circuit stress and switching losses compared to the original part (180 nC). This results in improved switching efficiency and reduced heat generation in the gate driver circuit. Lower gate charge also enables faster switching transitions.

Q: Can the STW75NF20 be used in high-power applications requiring 360W dissipation?

A: The STW75NF20 is rated for 190W maximum power dissipation, which is significantly lower than the original IXFH80N20Q (360W). This part is suitable only for applications with moderate thermal requirements. For high-power applications requiring sustained 360W dissipation, the IXFH80N25X3 (390W rating) or IRFP4227PBF (330W rating) are more appropriate selections.

Q: Are there package compatibility concerns when substituting these parts?

A: All substitute parts use TO-247 family packages (TO-247AD, TO-247, TO-247AC, or TO-247-3), which share the same three-pin through-hole configuration and pin spacing. Physical mounting compatibility is maintained across these variants. However, PCB layout and thermal management design should be reviewed to ensure adequate heat dissipation for the selected substitute part, particularly regarding thermal pad contact and heatsink interface.

Q: What is the inventory status of these substitute parts?

A: The IXFH80N25X3 has 2,180 pieces in stock. The IRFP4227PBF has 53,200 pieces in stock, providing the highest availability. The STW75NF20 has 1,358 pieces in stock. The original IXFH80N20Q has 3,510 pieces in stock but is classified as obsolete, making it unsuitable for new production designs.