IXFH80N15Q N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH80N15Q is an N-Channel MOSFET manufactured by IXYS, rated for 150V drain-to-source voltage with 80A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-247AD through-hole package. The IXFH80N15Q is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

IXFH80N15Q
IXYSIn Stock: 3215IXFH80N15Q Datasheet
IXFH80N15Q
Current Part
IXFH96N15P
IXYSIn Stock: 2258IXFH96N15P Datasheet
IXFH96N15P
Direct

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 150 V
Continuous Drain Current (Id) @ 25°C 80 A
Power Dissipation (Max) 360 W
RDS(on) Max @ 40A, 10V 22.5 mOhm
Gate Charge (Qg) Max @ 10V 180 nC
Input Capacitance (Ciss) Max @ 25V 4500 pF
Operating Temperature Range -55 to 150 °C
Package Type TO-247-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitute parts for the IXFH80N15Q are identified based on strict electrical and mechanical parameter compatibility. The following criteria determine substitution eligibility:

Electrical Compatibility Requirements:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 150V
  • Continuous Drain Current (Id) must equal or exceed 80A at 25°C
  • Gate-Source Voltage (Vgs) maximum must be ±20V or greater
  • Operating temperature range must encompass or extend the original -55°C to 150°C specification
  • Package and mounting type must be TO-247-3 through-hole configuration

Mechanical Compatibility Requirements:

  • Identical package designation: TO-247AD (IXFH)
  • Through-hole mounting compatibility
  • Moisture Sensitivity Level (MSL) of 1 or equivalent

The IXFH96N15P meets all substitution criteria and is classified as an active product, providing long-term availability and design continuity.

Parameter Comparison

Parameter IXFH80N15Q (Main Part) IXFH96N15P (Substitute) Unit
Manufacturer IXYS IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 150 150 V
Continuous Drain Current (Id) @ 25°C 80 96 A
Drive Voltage (Max Rds On) 10 10 V
Gate-Source Voltage (Vgs) Max ±20 ±20 V
Power Dissipation (Max) 360 480 W
Operating Temperature Range -55 to 150 -55 to 175 °C
Package Type TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole
Series HiPerFET™ HiPerFET™, Polar
Product Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The IXFH96N15P is a direct substitute for the IXFH80N15Q based on the following engineering criteria:

Product Status Advantage: The IXFH96N15P is classified as an active product with current manufacturing status, whereas the IXFH80N15Q is obsolete. This ensures long-term availability, consistent supply chain access, and ongoing manufacturer support.

Electrical Performance: The IXFH96N15P provides enhanced electrical performance with 96A continuous drain current compared to the 80A specification of the IXFH80N15Q, while maintaining identical 150V drain-to-source voltage rating. The increased power dissipation capability (480W versus 360W) provides additional thermal margin in applications.

Compliance and Certifications: The IXFH96N15P carries RoHS3 compliance and REACH unaffected status, meeting current regulatory requirements. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Thermal Performance: The IXFH96N15P extends the maximum operating temperature to 175°C compared to 150°C for the IXFH80N15Q, providing improved thermal headroom in high-temperature applications.

Package Compatibility: Both devices utilize identical TO-247-3 through-hole packaging with TO-247AD (IXFH) supplier designation, ensuring mechanical and thermal interface compatibility without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the IXFH96N15P directly replace the IXFH80N15Q in existing designs?

A: Yes. The IXFH96N15P is electrically and mechanically compatible with the IXFH80N15Q. Both devices share identical drain-to-source voltage (150V), gate-source voltage (±20V), package type (TO-247-3), and mounting configuration (through-hole). The substitute part provides equal or superior performance across all critical parameters.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Product Status—IXFH96N15P is active while IXFH80N15Q is obsolete; (2) Continuous Drain Current—96A versus 80A; (3) Power Dissipation—480W versus 360W; (4) Maximum Operating Temperature—175°C versus 150°C; (5) Gate Charge—110 nC versus 180 nC; (6) Input Capacitance—3500 pF versus 4500 pF. The IXFH96N15P offers enhanced performance specifications.

Q: Are there any thermal considerations when substituting these parts?

A: The IXFH96N15P has higher power dissipation capability (480W) and extended maximum operating temperature (175°C). Existing thermal management solutions designed for the IXFH80N15Q will remain adequate for the substitute part. The lower gate charge (110 nC versus 180 nC) may reduce switching losses in certain circuit topologies.

Q: Do both parts use the same pinout configuration?

A: Yes. Both the IXFH80N15Q and IXFH96N15P use the TO-247-3 package with identical pin assignments. No circuit board modifications are required for substitution.

Q: What is the moisture sensitivity level for these components?

A: Both devices carry Moisture Sensitivity Level (MSL) 1, indicating unlimited shelf life without moisture control requirements. Standard handling and storage practices are sufficient.

Q: Are there compliance or regulatory differences between these parts?

A: The IXFH96N15P carries RoHS3 compliance and REACH unaffected status. Both devices share identical ECCN and HTSUS classifications. The substitute part meets current regulatory requirements for new designs and production.

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