IXFH80N10Q Equivalent & Substitute Parts

Part Overview

The IXFH80N10Q is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 80A continuous drain current at 25°C. This device is packaged in TO-247AD (IXFH) through-hole configuration and belongs to the HiPerFET™ series. The part is currently obsolete, necessitating identification of functionally equivalent alternatives from active product lines. Substitute parts must maintain compatibility with the 100V voltage class, support equivalent or higher current ratings, and utilize compatible through-hole packaging.

Key Parameters

Parameter	IXFH80N10Q	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
Rds On (Max) @ Id, Vgs	15	mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs	180	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	4500	pF @ 25V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-247-3
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IXFH80N10Q is determined by the following critical parameters:

Voltage Class Requirement: All substitute parts must maintain the 100V Vdss rating to ensure compatibility with the original circuit design.

Current Rating Compatibility: Substitute parts must support continuous drain current equal to or exceeding 80A at 25°C. Parts with lower current ratings are not suitable; parts with higher ratings provide design margin.

Packaging Compatibility: All substitute parts utilize through-hole TO-247-3 or TO-247AC packaging, which are mechanically and electrically compatible with the original TO-247AD footprint.

Gate Drive Voltage: All substitute parts operate with 10V gate drive voltage, matching the original specification.

Temperature Range: Substitute parts must support the operating temperature range of -55°C to 150°C minimum. Parts with extended upper temperature limits (175°C) provide additional thermal margin.

Active Product Status: Preference is given to parts with active product status and current RoHS3 compliance to ensure long-term availability and regulatory alignment.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Tj Range (°C)	Status
IXFH80N10Q	IXYS	100	80	15 @ 40A, 10V	180 @ 10V	4500 @ 25V	360	-55 to 150	Obsolete
IXTH200N10T	IXYS	100	200	5.5 @ 50A, 10V	152 @ 10V	9400 @ 25V	550	-55 to 175	Active
FDH3632	onsemi	100	80	9 @ 80A, 10V	110 @ 10V	6000 @ 25V	310	-55 to 175	Active
HUF75639G3	onsemi	100	56	25 @ 56A, 10V	130 @ 20V	2000 @ 25V	200	-55 to 175	Active
HUF75652G3	onsemi	100	75	8 @ 75A, 10V	475 @ 20V	7585 @ 25V	515	-55 to 175	Active
IRFP140PBF	Vishay Siliconix	100	31	77 @ 19A, 10V	72 @ 10V	1700 @ 25V	180	-55 to 175	Active
IRFP150PBF	Vishay Siliconix	100	41	55 @ 25A, 10V	140 @ 10V	2800 @ 25V	230	-55 to 175	Active
IRFP4310ZPBF	Infineon Technologies	100	120	6 @ 75A, 10V	170 @ 10V	6860 @ 50V	280	-55 to 175	Active

Engineering Selection Recommendations

Direct Current-Matched Substitutes:

The FDH3632 (onsemi) provides the closest functional match to the IXFH80N10Q. Both devices support 80A continuous drain current at 25°C with 100V Vdss rating. The FDH3632 is active, RoHS3 compliant, and offers improved on-resistance (9 mOhm versus 15 mOhm) with extended operating temperature range to 175°C. This part is suitable for direct replacement in applications where the 80A current rating is required.

The HUF75652G3 (onsemi) supports 75A continuous drain current, providing near-equivalent performance with superior on-resistance (8 mOhm) and higher power dissipation capability (515W). This part is active and RoHS3 compliant, suitable for applications tolerating slightly reduced current capacity.

Higher Current Capacity Substitutes:

The IXTH200N10T (IXYS) and IRFP4310ZPBF (Infineon) support 200A and 120A continuous drain current respectively, both exceeding the original 80A specification. These parts provide design margin for current-limited applications and are active with RoHS3 compliance. The IXTH200N10T maintains IXYS manufacturer continuity.

Lower Current Capacity Substitutes:

The IRFP140PBF (31A) and IRFP150PBF (41A) do not meet the 80A current requirement and are not suitable for direct replacement in applications requiring the full 80A rating.

Compliance and Availability:

All recommended substitutes (FDH3632, HUF75652G3, IXTH200N10T, IRFP4310ZPBF) carry active product status, RoHS3 compliance, and REACH unaffected designation, ensuring regulatory alignment and long-term supply continuity.

Frequently Asked Questions (FAQ)

Q: Can the FDH3632 directly replace the IXFH80N10Q?

A: Yes. Both devices are rated for 100V Vdss and 80A continuous drain current at 25°C. The FDH3632 is active, RoHS3 compliant, and uses compatible TO-247-3 through-hole packaging. The FDH3632 offers improved on-resistance and extended temperature range.

Q: What is the difference between TO-247AD, TO-247AC, and TO-247-3 packaging?

A: All three are through-hole TO-247 variants with identical pin configurations and mechanical footprints. TO-247AD, TO-247AC, and TO-247-3 are mechanically and electrically interchangeable in standard PCB layouts.

Q: Can I use the IXTH200N10T as a substitute if my application only requires 80A?

A: Yes. The IXTH200N10T supports 200A continuous drain current, exceeding the 80A requirement. Higher current-rated devices operate within specification at lower current levels and provide design margin. The IXTH200N10T maintains IXYS manufacturer continuity and is active.

Q: Why are IRFP140PBF and IRFP150PBF not recommended?

A: These parts support only 31A and 41A continuous drain current respectively, both below the 80A requirement of the IXFH80N10Q. They are unsuitable for applications requiring the full 80A rating.

Q: What is the significance of RoHS3 compliance for these substitutes?

A: RoHS3 compliance indicates the part meets current European Union Restriction of Hazardous Substances regulations. All recommended substitutes carry RoHS3 compliance, ensuring regulatory alignment with modern procurement standards.

Q: Does the HUF75652G3 meet the current requirement?

A: The HUF75652G3 supports 75A continuous drain current, which is 5A below the original 80A specification. This part is suitable for applications where 75A capacity is acceptable. It offers superior on-resistance (8 mOhm) and higher power dissipation (515W).

Q: Are there temperature range considerations when substituting?

A: The IXFH80N10Q operates from -55°C to 150°C. All recommended substitutes extend the upper limit to 175°C, providing additional thermal margin. Applications operating near 150°C should verify that the substitute's extended range does not introduce unintended thermal behavior changes.

Q: What is gate charge (Qg) and why does it vary among substitutes?

A: Gate charge represents the total charge required to switch the MOSFET on or off. Variations in Qg affect gate drive circuit design and switching speed. The IXFH80N10Q specifies 180 nC at 10V. Substitutes range from 72 nC to 475 nC. Verify that the gate drive circuit can supply the required charge for the selected substitute.

Q: Can I use multiple lower-current devices in parallel to replace the IXFH80N10Q?

A: Parallel operation of MOSFETs requires careful design to ensure current sharing and thermal balance. This approach is outside the scope of direct substitution and requires detailed circuit analysis.

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