IXFH80N06 Equivalent & Substitute Parts

Part Overview

The IXFH80N06 is an N-Channel MOSFET rated for 60V drain-to-source voltage with 80A continuous drain current in a Through Hole TO-247AD package. Manufactured by IXYS, this device is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The part remains in stock with 778 units available as new original inventory.

Substiute Parts

IXFH80N06
IXYSIn Stock: 848IXFH80N06 Datasheet
IXFH80N06
Current Part
IRFP3206PBF
Infineon TechnologiesIn Stock: 17997IRFP3206PBF Datasheet
IRFP3206PBF
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80 A (Tc)
Drive Voltage (Max Rds On) 10 V
Vgs (Max) ±20 V
Mounting Type Through Hole
Package / Case TO-247-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IXFH80N06 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V minimum
  • Mounting Type: Through Hole
  • Package Family: TO-247 series

Functional Compatibility Parameters:

  • Drive Voltage: 10V gate drive capability
  • Maximum Gate Voltage (Vgs): ±20V tolerance
  • Moisture Sensitivity Level: 1 (Unlimited)

The IRFP3206PBF meets all critical matching parameters. While it provides higher continuous drain current (120A versus 80A) and additional power dissipation specification (280W), these represent enhanced performance characteristics that do not prevent substitution in applications designed for the IXFH80N06. The higher current rating ensures thermal and electrical margin in existing circuit designs.

Parameter Comparison

Parameter IXFH80N06 IRFP3206PBF Unit
Manufacturer IXYS Infineon Technologies
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 60 V
Current - Continuous Drain (Id) @ 25°C 80 120 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Vgs (Max) ±20 ±20 V
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active
RoHS Status Not specified ROHS3 Compliant

Engineering Selection Recommendations

The IRFP3206PBF is a direct functional substitute for the IXFH80N06 based on electrical and mechanical parameter equivalence. Selection of the IRFP3206PBF provides the following advantages:

Product Status: The IRFP3206PBF carries Active product status, ensuring long-term availability and manufacturing support, whereas the IXFH80N06 is Obsolete.

Regulatory Compliance: The IRFP3206PBF is ROHS3 Compliant, meeting current environmental and regulatory requirements. Both devices are REACH Unaffected and classified under ECCN EAR99.

Performance Margin: The IRFP3206PBF provides 50% higher continuous drain current (120A versus 80A) and specified power dissipation (280W), delivering enhanced thermal and electrical margin in existing circuit designs without requiring circuit modification.

Packaging and Thermal Interface: Both devices utilize the TO-247-3 package family with Through Hole mounting, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heatsink assemblies.

Frequently Asked Questions (FAQ)

Q: Can the IRFP3206PBF directly replace the IXFH80N06 in existing designs?

A: Yes. Both devices share identical Drain to Source Voltage (60V), Drive Voltage (10V), Maximum Gate Voltage (±20V), TO-247-3 package, and Through Hole mounting. The IRFP3206PBF provides higher continuous drain current (120A versus 80A), which represents enhanced performance without circuit modification requirements.

Q: What is the difference between TO-247AD and TO-247AC packaging?

A: Both designations refer to the TO-247-3 package family with Through Hole mounting. The suffix letters (AD versus AC) indicate minor lead configuration variations from different manufacturers. Mechanical and thermal interface compatibility with standard TO-247 heatsinks and PCB footprints is maintained.

Q: Does the higher current rating of the IRFP3206PBF affect circuit operation?

A: No. The higher continuous drain current (120A) and power dissipation specification (280W) of the IRFP3206PBF represent enhanced device capability. Circuits designed for 80A operation will function within the IRFP3206PBF's specifications with improved thermal margin.

Q: Are there compliance or regulatory differences between these devices?

A: The IRFP3206PBF is ROHS3 Compliant, meeting current environmental standards. Both devices are REACH Unaffected and classified under ECCN EAR99. The IXFH80N06 RoHS status is not specified in available documentation.

Q: What is the significance of the Obsolete product status for the IXFH80N06?

A: Obsolete status indicates the IXFH80N06 is no longer in active production. While 778 units remain in stock as new original inventory, long-term availability cannot be assured. The IRFP3206PBF, with Active product status, provides assured supply continuity for new designs and ongoing production requirements.

Q: Are gate charge and input capacitance specifications relevant for substitution?

A: Gate charge (170 nC @ 10V) and input capacitance (6540 pF @ 50V) are provided for the IRFP3206PBF but not specified for the IXFH80N06. These parameters affect gate drive circuit design and switching speed. Verification against specific circuit requirements is necessary if gate drive optimization is a design consideration.

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