IXFH7N90Q Equivalent & Substitute Parts

Part Overview

The IXFH7N90Q is an N-Channel MOSFET rated for 900V drain-to-source voltage with 7A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247AD package and is part of the HiPerFET™ Q Class series. The part is currently obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	7	A
On-State Resistance (Rds On Max) @ 500mA, 10V	1.5	Ohm
Gate Threshold Voltage (Vgs(th) Max) @ 2.5mA	5	V
Gate Charge (Qg Max) @ 10V	56	nC
Input Capacitance (Ciss Max) @ 25V	2200	pF
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH7N90Q is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Substitute parts must equal or exceed 900V
Continuous Drain Current (Id): Substitute parts must equal or exceed 7A at 25°C
Package Type: TO-247-3 or compatible through-hole package
Mounting Type: Through-hole configuration
Operating Temperature Range: Must support -55°C to 150°C

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equivalent values ensure comparable performance
Gate Charge (Qg): Similar values maintain switching characteristics
Input Capacitance (Ciss): Similar values support gate drive circuit design

The substitute parts listed below meet or exceed the primary criteria, ensuring functional compatibility in applications designed for the IXFH7N90Q.

Parameter Comparison

Parameter	IXFH7N90Q	STW7NK90Z	STW9NK90Z	STW9NK95Z	STW12NK90Z	FQH8N100C
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	onsemi
Vdss (V)	900	900	900	950	900	1000
Id @ 25°C (A)	7	5.8	8	7	11	8
Rds On Max (Ohm)	1.5	2	1.3	1.38	0.88	1.45
Vgs(th) Max (V)	5	4.5	4.5	4.5	4.5	5
Qg Max (nC)	56	60.5	72	56	152	70
Ciss Max (pF)	2200	1350	2115	2256	3500	3220
Power Dissipation Max (W)	180	140	160	160	230	225
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (Highest Compatibility):

STW9NK95Z (STMicroelectronics) provides the closest electrical match to the IXFH7N90Q. This device maintains the same 7A continuous drain current, identical gate charge specification (56 nC), and comparable input capacitance (2256 pF vs. 2200 pF). The 950V Vdss rating exceeds the 900V requirement. Product status is active with ROHS3 compliance and unlimited moisture sensitivity level. Inventory availability is 55,400 units.

STW9NK90Z (STMicroelectronics) offers improved on-state resistance (1.3 Ohm vs. 1.5 Ohm) with 8A continuous drain current at the same 900V Vdss rating. Gate charge is 72 nC, slightly elevated from the original specification. Product status is active with ROHS3 compliance. Inventory availability is 19,260 units.

Secondary Substitutes (Acceptable with Design Verification):

STW12NK90Z (STMicroelectronics) provides enhanced current handling capability at 11A continuous drain current with superior on-state resistance (0.88 Ohm). The 900V Vdss rating matches the original specification. Gate charge increases to 152 nC, requiring gate drive circuit evaluation. Product status is active with ROHS3 compliance. Inventory availability is 29,400 units.

FQH8N100C (onsemi) offers higher voltage rating (1000V Vdss) with 8A continuous drain current and improved on-state resistance (1.45 Ohm). Gate charge is 70 nC. Product status is active with ROHS3 compliance. Inventory availability is 1,473 units.

STW7NK90Z (STMicroelectronics) provides lower current capability at 5.8A, below the original 7A specification. On-state resistance is higher at 2 Ohm. This device is suitable only for applications with reduced current requirements. Product status is active with ROHS3 compliance. Inventory availability is 2,086 units.

All substitute parts are housed in TO-247-3 packages compatible with through-hole mounting and support the full -55°C to 150°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can STW7NK90Z be used as a direct replacement for IXFH7N90Q?

A: STW7NK90Z is not a direct replacement. While it maintains the 900V Vdss rating and TO-247-3 package, the continuous drain current is rated at 5.8A, below the original 7A specification. Use this device only in applications with reduced current requirements.

Q: What is the primary advantage of STW9NK95Z over other substitutes?

A: STW9NK95Z provides the closest electrical match to the IXFH7N90Q, maintaining identical gate charge (56 nC) and comparable input capacitance. The 7A continuous drain current matches the original specification exactly, and the 950V Vdss rating provides margin above the 900V requirement.

Q: Does FQH8N100C require gate drive circuit modifications?

A: FQH8N100C has a gate charge of 70 nC compared to the original 56 nC. Gate drive circuits designed for the IXFH7N90Q may require evaluation to confirm adequate drive capability. The higher input capacitance (3220 pF vs. 2200 pF) should also be considered in switching frequency applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts are ROHS3 compliant and REACH unaffected, matching the compliance status of the original IXFH7N90Q.

Q: Can STW12NK90Z be used in applications designed for 7A operation?

A: STW12NK90Z is rated for 11A continuous drain current and can be used in 7A applications. However, the significantly higher gate charge (152 nC vs. 56 nC) requires gate drive circuit evaluation. The improved on-state resistance (0.88 Ohm) reduces power dissipation, which may benefit thermal management.

Q: What is the package compatibility between IXFH7N90Q and substitute parts?

A: The IXFH7N90Q uses a TO-247AD package. All substitute parts use the TO-247-3 package. Both are through-hole configurations with compatible pinouts and mounting footprints suitable for standard TO-247 PCB layouts.

Q: Which substitute offers the best on-state resistance performance?

A: STW12NK90Z provides the lowest on-state resistance at 0.88 Ohm, compared to 1.5 Ohm for the original IXFH7N90Q. This results in reduced conduction losses and lower junction temperature in high-current applications.

Q: Are there inventory considerations for substitute selection?

A: STW9NK95Z has the highest inventory availability at 55,400 units, followed by STW12NK90Z at 29,400 units and STW9NK90Z at 19,260 units. FQH8N100C has lower availability at 1,473 units. STW7NK90Z has 2,086 units available.

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