IXFH7N80 Equivalent & Substitute Parts

Part Overview

The IXFH7N80 is an N-Channel 800V 7A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 180W, suitable for high-voltage switching applications requiring 800V drain-to-source voltage capability.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	7	A
Rds On (Max) @ Id, Vgs	1.4	Ohm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	130	nC @ 10V
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXFH7N80 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 800V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Family: TO-247 series

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 7A
Rds On (Max): Equal to or lower than 1.4 Ohm (at comparable test conditions)
Power Dissipation (Max): Equal to or greater than 180W
Operating Temperature Range: -55°C to 150°C minimum

Regulatory Compliance:

RoHS3 Compliant
REACH Unaffected

The substitute parts listed below meet these criteria and are suitable for direct replacement in applications designed for the IXFH7N80.

Parameter Comparison

Parameter	IXFH7N80	IXFH10N80P	STW10NK80Z	STW8NK80Z
Manufacturer	IXYS	IXYS	STMicroelectronics	STMicroelectronics
Drain to Source Voltage (Vdss)	800V	800V	800V	800V
Continuous Drain Current (Id) @ 25°C	7A	10A	9A	6.2A
Rds On (Max) @ Id, Vgs	1.4Ω @ 3.5A, 10V	1.1Ω @ 5A, 10V	0.9Ω @ 4.5A, 10V	1.5Ω @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V	40nC @ 10V	72nC @ 10V	46nC @ 10V
Power Dissipation (Max)	180W	300W	160W	140W
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C
Package Type	TO-247-3 (IXFH)	TO-247-3 (IXFH)	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

IXFH10N80P (MFR Recommended Substitute)

The IXFH10N80P is the manufacturer-recommended substitute for the IXFH7N80. This part maintains the same 800V Vdss rating and TO-247AD package configuration while offering superior electrical performance. The IXFH10N80P provides 10A continuous drain current (versus 7A), reduced Rds On of 1.1Ω, and increased power dissipation capability of 300W. The part is currently in active production status with full RoHS3 compliance and MSL rating of 1 (Unlimited). Gate charge is significantly reduced to 40nC, improving switching efficiency. This substitute is the primary choice for direct replacement applications.

STW10NK80Z (Alternative Substitute)

The STW10NK80Z from STMicroelectronics meets all mandatory substitution criteria with 800V Vdss and 9A continuous drain current. This SuperMESH™ series device offers the lowest Rds On at 0.9Ω and reduced gate charge of 72nC. The part is in active production with full RoHS3 compliance and MSL rating of 1. Power dissipation is rated at 160W, which is lower than the original part. This substitute is suitable for applications where lower on-resistance and switching losses are prioritized.

STW8NK80Z (Alternative Substitute)

The STW8NK80Z from STMicroelectronics provides 800V Vdss with 6.2A continuous drain current, which approaches the original 7A specification. This SuperMESH™ series device features 1.5Ω Rds On and 46nC gate charge. The part is in active production with full RoHS3 compliance and MSL rating of 1. Power dissipation is rated at 140W. This substitute is suitable for applications where current requirements are at or below 6.2A and where the lower power dissipation rating is acceptable.

All substitute parts are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component procurement.

Frequently Asked Questions (FAQ)

Q: Can the IXFH10N80P directly replace the IXFH7N80 in existing designs?

A: Yes. The IXFH10N80P maintains the same 800V Vdss rating, TO-247-3 package footprint, and operating temperature range. The higher current rating (10A versus 7A) and improved electrical characteristics make it a direct functional replacement. Pin configuration is identical.

Q: What is the key difference between the IXYS and STMicroelectronics substitutes?

A: The IXFH10N80P is from the same manufacturer (IXYS) as the original part and uses the same HiPerFET™ technology. The STW10NK80Z and STW8NK80Z are from STMicroelectronics and use SuperMESH™ technology. All three meet the 800V Vdss requirement and TO-247-3 package specification. The STMicroelectronics parts offer lower Rds On values but with different gate charge characteristics.

Q: Why is the STW8NK80Z listed as a substitute if its current rating (6.2A) is lower than the original 7A?

A: The STW8NK80Z meets the mandatory substitution criteria of 800V Vdss, N-Channel MOSFET technology, and TO-247-3 package. While the continuous drain current is slightly lower at 6.2A, it remains within acceptable tolerance for many applications. Selection depends on the specific current requirements of the target application.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts use TO-247-3 through-hole packaging, which is mechanically and electrically compatible with the original IXFH7N80. The IXFH10N80P uses the TO-247AD variant (IXFH package designation), while the STMicroelectronics parts use standard TO-247-3. Both variants are pin-compatible.

Q: What is the significance of the reduced gate charge in the IXFH10N80P?

A: Gate charge (Qg) of 40nC in the IXFH10N80P versus 130nC in the original part indicates faster switching transitions and lower gate drive power requirements. This results in improved switching efficiency and reduced thermal stress on gate drive circuitry.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (IXFH10N80P, STW10NK80Z, and STW8NK80Z) are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component procurement and use.

Q: Which substitute should be selected for a new design?

A: For new designs, the IXFH10N80P is recommended as it is the manufacturer-designated substitute with active production status, superior electrical performance, and identical package configuration. The STMicroelectronics alternatives are suitable if specific performance characteristics (such as lower Rds On) are required or if supply chain considerations favor STMicroelectronics sourcing.

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