IXFH7N100P N-Channel 1000V 7A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH7N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 7A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247 through-hole package. The part is Active in product status and fully compliant with RoHS3 and REACH regulations.

Substitute parts are identified when equivalent electrical performance can be achieved within the allowed parameter ranges for high-voltage N-Channel MOSFET applications. Substitution becomes necessary due to inventory availability, manufacturing discontinuation, or design optimization requirements while maintaining functional compatibility.

Substiute Parts

IXFH7N100P

IXYSIn Stock: 4233IXFH7N100P Datasheet

Current PartRFQ

STW7N105K5

STMicroelectronicsIn Stock: 1471STW7N105K5 Datasheet

SimilarRFQ

STW7NK90Z

STMicroelectronicsIn Stock: 2121STW7NK90Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFH7N100P are qualified based on the following criteria:

Primary Substitution Parameters:

• FET Type: N-Channel (mandatory match)
• Mounting Type: Through Hole (mandatory match)
• Package / Case: TO-247-3 (mandatory match)
• Technology: MOSFET (Metal Oxide) (mandatory match)
• Operating Temperature Range: -55°C to 150°C (mandatory match)
• Drain to Source Voltage (Vdss): Equal to or greater than 1000V
• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 7A
• Power Dissipation (Max): Equal to or greater than 300W

Compliance Parameters:

• RoHS Status: ROHS3 Compliant (mandatory match)
• REACH Status: REACH Unaffected (mandatory match)
• Moisture Sensitivity Level (MSL): 1 (Unlimited) (mandatory match)

Substitute parts identified in this reference meet all mandatory electrical and mechanical parameters. Parts with Vdss ratings below 1000V, continuous drain current below 7A, or power dissipation below 300W do not qualify as direct substitutes and are listed for reference only.

Parameter Comparison

Engineering Selection Recommendations

IXFH7N100P (Primary Part)

The IXFH7N100P remains the primary selection for applications requiring the specified electrical performance envelope. This part is Active in product status, fully RoHS3 compliant, and REACH unaffected. Current inventory of 4220 pieces supports immediate availability.

STW7NK90Z (Reference Only)

The STW7NK90Z is an N-Channel MOSFET from STMicroelectronics in the SuperMESH™ series. This part does not qualify as a direct substitute due to insufficient Vdss rating (900V versus 1000V required) and reduced continuous drain current (5.8A versus 7A required) and power dissipation (140W versus 300W required). This part is listed for reference in applications where voltage and current requirements are lower than the IXFH7N100P specification.

STW7N105K5 (Reference Only)

The STW7N105K5 is an N-Channel MOSFET from STMicroelectronics in the SuperMESH5™ series. This part does not qualify as a direct substitute due to insufficient continuous drain current (4A versus 7A required) and power dissipation (110W versus 300W required). Although the Vdss rating (1050V) exceeds the requirement, the reduced current and thermal handling capabilities make this part unsuitable for direct substitution. This part is listed for reference in applications with lower current demands.

Compliance Status

All listed parts maintain Active product status and comply with RoHS3 and REACH regulations. Moisture sensitivity level is 1 (Unlimited) across all parts, indicating no special handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can STW7NK90Z be used as a substitute for IXFH7N100P?

A: No. The STW7NK90Z has a Vdss rating of 900V, which is below the 1000V requirement. Additionally, the continuous drain current is 5.8A and power dissipation is 140W, both below the IXFH7N100P specifications of 7A and 300W respectively.

Q: Can STW7N105K5 be used as a substitute for IXFH7N100P?

A: No. Although the STW7N105K5 has a higher Vdss rating (1050V), the continuous drain current is 4A and power dissipation is 110W, both significantly below the IXFH7N100P requirements of 7A and 300W.

Q: What are the mandatory matching parameters for MOSFET substitution?

A: For the IXFH7N100P, mandatory matching parameters include FET type (N-Channel), mounting type (Through Hole), package type (TO-247-3), technology (MOSFET Metal Oxide), operating temperature range (-55°C to 150°C), and compliance certifications (RoHS3, REACH unaffected, MSL 1). Additionally, substitute parts must meet or exceed the Vdss (1000V), continuous drain current (7A), and power dissipation (300W) specifications.

Q: Are all listed parts RoHS3 compliant?

A: Yes. The IXFH7N100P and all listed substitute parts are RoHS3 compliant and REACH unaffected.

Q: What is the significance of the TO-247-3 package?

A: The TO-247-3 package is a through-hole configuration with three leads (Gate, Drain, Source). This package type is mandatory for mechanical and electrical compatibility. Substitutes must use the identical TO-247-3 package to ensure proper PCB mounting and thermal management.

Q: Can I use a part with lower power dissipation rating?

A: No. Power dissipation rating directly correlates to thermal handling capability. Using a part with lower power dissipation (such as STW7NK90Z at 140W or STW7N105K5 at 110W) in an application designed for 300W dissipation creates thermal stress and reduces component reliability.

Q: What is the difference between Vdss ratings and why does it matter?

A: Vdss (Drain-to-Source Voltage) is the maximum voltage the MOSFET can withstand between drain and source terminals. The IXFH7N100P is rated for 1000V. Using a part with lower Vdss (such as STW7NK90Z at 900V) in a 1000V application risks device breakdown and failure.