IXFH76N07-11 Equivalent & Substitute Parts

Part Overview

The IXFH76N07-11 is an N-Channel MOSFET rated for 70V drain-to-source voltage with 76A continuous drain current in a TO-247AD through-hole package. This device is part of the IXYS HiPerFET™ series and carries a product status of Not For New Designs. Identification of equivalent and substitute parts is necessary for applications requiring active product status, alternative voltage ratings, or enhanced performance characteristics while maintaining functional compatibility within the TO-247 package family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	70	V
Continuous Drain Current (Id) @ 25°C	76	A
On-State Resistance (Rds On) @ 40A, 10V	11	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	3.4	V
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH76N07-11 is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capacity (Id), on-state resistance (Rds On), package type, and mounting configuration. All substitute parts listed maintain N-Channel MOSFET technology with through-hole TO-247 family packaging and ±20V maximum gate voltage specification.

Substitute parts are grouped into three categories based on voltage and current characteristics:

Category 1: Higher Voltage Rating (100V+) — IXFH110N10P and IXFH76N15T2 provide elevated Vdss ratings suitable for applications requiring voltage margin above 70V while maintaining or exceeding current capacity.

Category 2: Lower Voltage, Higher Current — IRFP064NPBF operates at 55V Vdss with 110A continuous current, offering reduced voltage rating with enhanced current handling from an alternative manufacturer.

All substitute parts share the following allowable parameters: TO-247 package family, through-hole mounting, operating temperature range of -55°C to 175°C, ±20V Vgs maximum, and RoHS3 compliance.

Parameter Comparison

Parameter	IXFH76N07-11	IXFH110N10P	IXFH76N15T2	IRFP064NPBF
Manufacturer	IXYS	IXYS	IXYS	Infineon Technologies
Vdss (V)	70	100	150	55
Id @ 25°C (A)	76	110	76	110
Rds On (mOhm)	11 @ 40A, 10V	15 @ 500mA, 10V	22 @ 38A, 10V	8 @ 59A, 10V
Vgs(th) (V)	3.4 @ 4mA	5 @ 4mA	4.5 @ 250µA	4 @ 250µA
Gate Charge (nC)	240 @ 10V	110 @ 10V	97 @ 10V	170 @ 10V
Ciss (pF)	4400 @ 25V	3550 @ 25V	5800 @ 25V	4000 @ 25V
Power Dissipation (W)	360	480	350	200
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-247AD (IXFH)	TO-247AD (IXFH)	TO-247 (IXTH)	TO-247AC
Product Status	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH110N10P is suitable for applications requiring higher voltage headroom (100V) with increased current capacity (110A) while maintaining IXYS HiPerFET™ series consistency. This part carries Active product status and is recommended for new designs. The higher Vdss rating accommodates circuits with voltage transients or margin requirements exceeding 70V. Gate charge is reduced to 110 nC, improving switching speed characteristics.

IXFH76N15T2 maintains the 76A current rating of the original part while providing 150V Vdss capability through TrenchT2™ technology. This part is Active and suitable for new designs. The elevated voltage rating is appropriate for high-voltage switching applications. On-state resistance increases to 22 mOhm due to the higher voltage rating. Power dissipation is rated at 350W, slightly lower than the original 360W specification.

IRFP064NPBF is an Infineon Technologies HEXFET® alternative offering 110A continuous current at a reduced 55V Vdss rating. This part is Active and carries the lowest on-state resistance at 8 mOhm, resulting in reduced conduction losses. Power dissipation is limited to 200W. This substitute is appropriate only for applications where the 55V voltage rating is sufficient and lower conduction losses are prioritized. The TO-247AC package variant maintains mechanical compatibility with TO-247 mounting.

All substitute parts maintain RoHS3 compliance and the -55°C to 175°C operating temperature range of the original device.

Frequently Asked Questions (FAQ)

Q: Can IXFH110N10P directly replace IXFH76N07-11 in existing designs?

A: IXFH110N10P is mechanically and electrically compatible within the TO-247 package family. The higher 100V Vdss rating is backward-compatible with 70V applications. However, the different gate charge (110 nC vs. 240 nC) and threshold voltage (5V vs. 3.4V) may require gate drive circuit verification. Pin configuration remains identical across TO-247AD and TO-247AD packages.

Q: What is the primary difference between IXFH76N15T2 and IXFH76N07-11?

A: IXFH76N15T2 provides 150V Vdss versus 70V in the original part, utilizing TrenchT2™ technology for improved switching characteristics. Both maintain 76A continuous current. The higher voltage rating results in increased on-state resistance (22 mOhm vs. 11 mOhm) and reduced gate charge (97 nC vs. 240 nC). Package designation differs slightly (TO-247 IXTH vs. TO-247AD IXFH), though both are TO-247-3 mechanical variants.

Q: Is IRFP064NPBF suitable for 70V applications?

A: IRFP064NPBF operates at 55V Vdss maximum, which is below the 70V rating of IXFH76N07-11. This substitute is appropriate only for applications where the circuit voltage does not exceed 55V. The part offers superior on-state resistance (8 mOhm) and higher current capacity (110A), but reduced power dissipation capability (200W vs. 360W).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. IXFH110N10P, IXFH76N15T2, and IRFP064NPBF are all RoHS3 compliant and REACH unaffected, matching the compliance status of IXFH76N07-11.

Q: What is the significance of "Not For New Designs" status on IXFH76N07-11?

A: This status indicates the original part is in mature or end-of-life phase. All three substitute parts carry Active product status, ensuring long-term availability and manufacturer support for new design implementations.

Q: Do TO-247AD and TO-247AC packages have identical pin configurations?

A: TO-247AD (IXFH) and TO-247AC are both three-pin TO-247 variants with identical pin assignments (Gate, Drain, Source). Mechanical mounting and thermal characteristics are equivalent. The package designation suffix reflects manufacturer-specific internal construction but does not affect electrical compatibility or PCB layout requirements.

Q: How does gate charge affect circuit performance in substitution?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. IXFH76N07-11 requires 240 nC, while IXFH110N10P requires 110 nC and IXFH76N15T2 requires 97 nC. Lower gate charge enables faster switching and reduced gate drive power dissipation. Gate drive circuits must supply sufficient current to meet the specified gate charge within the required switching time.

Q: What thermal considerations apply when substituting these parts?

A: Power dissipation ratings differ: IXFH76N07-11 (360W), IXFH110N10P (480W), IXFH76N15T2 (350W), and IRFP064NPBF (200W). Thermal management design must accommodate the specific power dissipation of the selected substitute. All parts operate across -55°C to 175°C junction temperature range. Heatsink requirements depend on actual operating current and on-state resistance of the selected device.

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