IXFH75N10Q Equivalent & Substitute Parts

Part Overview

The IXFH75N10Q is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage and 75A continuous drain current in a Through Hole TO-247AD package. This device is part of the HiPerFET™ series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	75	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	20	mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id	4	V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	180	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	3700	pF @ 25V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IXFH75N10Q is determined by matching the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3

Allowable Parameter Variations: Substitute parts may exhibit differences in Rds On (Max), Gate Charge (Qg), Input Capacitance (Ciss), Power Dissipation (Max), and Operating Temperature range, provided the mandatory parameters remain equivalent. These variations reflect different semiconductor process technologies and design approaches while maintaining functional compatibility in the application circuit.

The three substitute parts listed—APT10M19BVRG, APT10M25BVRG, and HUF75652G3—all satisfy the mandatory matching criteria and are therefore electrically and mechanically compatible with the IXFH75N10Q.

Parameter Comparison

Parameter	IXFH75N10Q	APT10M19BVRG	APT10M25BVRG	HUF75652G3
Manufacturer	IXYS	Microchip Technology	Microchip Technology	onsemi
Product Status	Obsolete	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	100V	100V	100V	100V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)	75A (Tc)	75A (Tc)	75A (Tc)
Rds On (Max) @ Id, Vgs	20 mOhm @ 37.5A, 10V	19 mOhm @ 500mA, 10V	25 mOhm @ 500mA, 10V	8 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA	4V @ 1mA	4V @ 1mA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10V	300 nC @ 10V	225 nC @ 10V	475 nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 25V	6120 pF @ 25V	5160 pF @ 25V	7585 pF @ 25V
Vgs (Max)	±20V	—	—	±20V
Power Dissipation (Max)	300W (Tc)	—	—	515W (Tc)
Operating Temperature	-55 to 150°C (TJ)	—	—	-55 to 175°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	—	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

APT10M19BVRG (Microchip Technology)

This substitute is an active product with ROHS3 compliance and REACH unaffected status. The APT10M19BVRG meets all mandatory electrical and mechanical parameters. The Rds On specification of 19 mOhm is lower than the IXFH75N10Q at 20 mOhm, resulting in reduced on-state losses. Gate charge is higher at 300 nC compared to 180 nC, which may increase switching losses in high-frequency applications. This part is suitable for applications where lower conduction losses are prioritized.

APT10M25BVRG (Microchip Technology)

This substitute is an active product with ROHS3 compliance and REACH unaffected status. The APT10M25BVRG meets all mandatory electrical and mechanical parameters. The Rds On specification of 25 mOhm is higher than the IXFH75N10Q at 20 mOhm, resulting in increased on-state losses. Gate charge is 225 nC, positioned between the other two substitutes. This part is suitable for applications where gate charge characteristics are a secondary consideration.

HUF75652G3 (onsemi)

This substitute is an active product with ROHS3 compliance and REACH unaffected status. The HUF75652G3 meets all mandatory electrical and mechanical parameters and offers the lowest Rds On specification at 8 mOhm, providing superior conduction efficiency. Power dissipation rating is 515W, exceeding the original 300W specification. Operating temperature range extends to 175°C compared to 150°C. Gate charge is higher at 475 nC. This part is suitable for applications requiring maximum thermal performance and lowest conduction losses.

Frequently Asked Questions (FAQ)

Q: Can the APT10M19BVRG, APT10M25BVRG, and HUF75652G3 be used interchangeably with the IXFH75N10Q?

A: Yes. All three substitute parts share identical mandatory parameters: 100V Vdss, 75A continuous drain current, N-Channel configuration, Through Hole mounting, and TO-247-3 package. Differences in Rds On, gate charge, and input capacitance reflect different semiconductor technologies but do not prevent functional substitution. Circuit performance characteristics such as conduction losses and switching speed will vary based on these parameter differences.

Q: What is the impact of different Rds On values on circuit performance?

A: Rds On directly affects on-state power dissipation. Lower Rds On values (HUF75652G3 at 8 mOhm) reduce conduction losses and heat generation. Higher Rds On values (APT10M25BVRG at 25 mOhm) increase conduction losses. Selection depends on thermal design requirements and acceptable power loss budgets in the application.

Q: How do gate charge differences affect circuit operation?

A: Gate charge (Qg) influences switching speed and driver circuit requirements. Higher gate charge (HUF75652G3 at 475 nC) requires more charge transfer from the gate driver, potentially increasing switching time. Lower gate charge (IXFH75N10Q at 180 nC) enables faster switching. Driver circuits must be capable of supplying the required gate charge for reliable operation.

Q: Are all substitute parts RoHS and REACH compliant?

A: Yes. APT10M19BVRG, APT10M25BVRG, and HUF75652G3 are all ROHS3 compliant and REACH unaffected. The original IXFH75N10Q compliance status is not specified in the provided data.

Q: Does the TO-247-3 package differ between manufacturers?

A: The TO-247-3 package is a standardized through-hole package with identical mechanical dimensions and pin configuration across all manufacturers. All four parts (IXFH75N10Q, APT10M19BVRG, APT10M25BVRG, and HUF75652G3) use this package and are mechanically interchangeable on printed circuit boards.

Q: Which substitute part should be selected for thermal-critical applications?

A: The HUF75652G3 offers the highest power dissipation rating at 515W and the lowest Rds On at 8 mOhm, making it the optimal choice for applications requiring maximum thermal performance and efficiency.

Q: What is the significance of the different Vgs(th) test conditions across parts?

A: Vgs(th) is measured at different drain current levels: IXFH75N10Q at 4mA, APT10M19BVRG and APT10M25BVRG at 1mA, and HUF75652G3 at 250µA. All parts specify a maximum threshold voltage of 4V, ensuring compatible gate drive requirements. The different test currents reflect manufacturer characterization methods but do not affect practical gate drive circuit design.

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