IXFH75N10 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH75N10 is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 75A continuous drain current at 25°C. This device is packaged in a TO-247AD through-hole configuration and belongs to the HiPerFET™ series. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement.

Substitute parts are selected based on matching or exceeding the electrical performance parameters while maintaining compatible package configurations and thermal characteristics. The primary substitution criteria include drain-to-source voltage rating, continuous drain current capability, on-state resistance, and through-hole mounting compatibility.

Key Parameters

Parameter	IXFH75N10 Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	75	A (Tc)
Rds On (Max) @ Id, Vgs	20	mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id	4	V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	260	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	4500	pF @ 25V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
Product Status	Obsolete	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts are grouped into two categories based on electrical and mechanical compatibility with the IXFH75N10:

Category 1: Direct Electrical Equivalents (100V, 75A Rating)

Parts in this category match the primary electrical specifications of the IXFH75N10: 100V drain-to-source voltage and 75A continuous drain current. These parts are suitable for direct replacement in applications where the original performance envelope is required. Parts include APT10M19BVRG, APT10M25BVRG, and HUF75652G3. All maintain TO-247-3 package compatibility and through-hole mounting.

Category 2: Higher Performance Alternatives (100V, Higher Current or Enhanced Ratings)

Parts in this category exceed the current rating or provide enhanced thermal performance while maintaining the 100V voltage specification. The IXFH110N10P provides 110A continuous drain current with improved power dissipation (480W vs. 300W). The FDH3632 provides 80A continuous drain current with superior on-state resistance (9mOhm vs. 20mOhm). These parts are suitable for applications requiring higher current capacity or improved thermal management.

Category 3: Higher Voltage Alternative (150V Rating)

The IXFH76N15T2 operates at 150V drain-to-source voltage with 76A continuous drain current. This part is suitable for applications requiring higher voltage blocking capability while maintaining comparable current handling.

Key Substitution Parameters:

Drain-to-Source Voltage (Vdss): 100V or higher
Continuous Drain Current (Id): 75A or higher
On-State Resistance (Rds On): 20mOhm or lower preferred
Package: TO-247-3 or compatible TO-247 variant
Mounting: Through-hole configuration
Gate Voltage (Vgs): ±20V maximum rating
Operating Temperature: -55°C to 150°C minimum range

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Tj Range (°C)	Package	Status
IXFH75N10	IXYS	100	75	20 @ 37.5A, 10V	260 @ 10V	4500 @ 25V	300	-55 to 150	TO-247AD	Obsolete
IXFH110N10P	IXYS	100	110	15 @ 500mA, 10V	110 @ 10V	3550 @ 25V	480	-55 to 175	TO-247AD	Active
IXFH76N15T2	IXYS	150	76	22 @ 38A, 10V	97 @ 10V	5800 @ 25V	350	-55 to 175	TO-247	Active
APT10M19BVRG	Microchip Technology	100	75	19 @ 500mA, 10V	300 @ 10V	6120 @ 25V	—	—	TO-247 [B]	Active
APT10M25BVRG	Microchip Technology	100	75	25 @ 500mA, 10V	225 @ 10V	5160 @ 25V	—	—	TO-247 [B]	Active
FDH3632	onsemi	100	80	9 @ 80A, 10V	110 @ 10V	6000 @ 25V	310	-55 to 175	TO-247-3	Active
HUF75639G3	onsemi	100	56	25 @ 56A, 10V	130 @ 20V	2000 @ 25V	200	-55 to 175	TO-247-3	Active
HUF75652G3	onsemi	100	75	8 @ 75A, 10V	475 @ 20V	7585 @ 25V	515	-55 to 175	TO-247-3	Active
IRFP140PBF	Vishay Siliconix	100	31	77 @ 19A, 10V	72 @ 10V	1700 @ 25V	180	-55 to 175	TO-247AC	Active
IRFP150PBF	Vishay Siliconix	100	41	55 @ 25A, 10V	140 @ 10V	2800 @ 25V	230	-55 to 175	TO-247AC	Active

Engineering Selection Recommendations

For Direct Replacement (100V, 75A Applications):

The HUF75652G3 (onsemi) provides the closest electrical match to the IXFH75N10 with identical 100V and 75A ratings. This part is active in production, ROHS3 compliant, and offers superior on-state resistance (8mOhm vs. 20mOhm), resulting in lower power dissipation and improved thermal performance. The TO-247-3 package is mechanically compatible with the original TO-247AD configuration.

The APT10M19BVRG (Microchip Technology) also matches the 100V and 75A specifications with slightly lower on-state resistance (19mOhm). This part is active in production and ROHS3 compliant.

For Higher Current Applications (100V, >75A):

The IXFH110N10P (IXYS) maintains the same manufacturer lineage as the original part while providing 110A continuous drain current and 480W power dissipation. This part is active in production, ROHS3 compliant, and operates across an extended temperature range (-55°C to 175°C).

The FDH3632 (onsemi) provides 80A continuous drain current with exceptional on-state resistance (9mOhm) and 310W power dissipation. This part is active in production and ROHS3 compliant.

For Higher Voltage Applications (150V):

The IXFH76N15T2 (IXYS) provides 150V drain-to-source voltage with 76A continuous drain current for applications requiring higher voltage blocking capability. This part is active in production and ROHS3 compliant.

Compliance Considerations:

All recommended substitute parts are ROHS3 compliant and REACH unaffected, matching the regulatory status of the original IXFH75N10. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the HUF75652G3 directly replace the IXFH75N10 in all applications?

A: The HUF75652G3 matches the electrical specifications (100V, 75A) and uses a compatible TO-247-3 package. However, the lower on-state resistance (8mOhm vs. 20mOhm) results in reduced power dissipation. Applications with thermal constraints may benefit from this improvement. Gate charge and input capacitance differ, which may affect gate drive circuit performance in high-frequency switching applications.

Q: What is the difference between TO-247AD and TO-247-3 packages?

A: Both are through-hole TO-247 variants with three leads (drain, gate, source). The TO-247AD and TO-247-3 designations refer to different manufacturer conventions but are mechanically and electrically compatible for PCB mounting and thermal management purposes.

Q: Is the IXFH110N10P suitable for applications designed for the IXFH75N10?

A: The IXFH110N10P provides higher current capability (110A vs. 75A) and improved power dissipation (480W vs. 300W) while maintaining the same 100V voltage rating. It is suitable for applications where the original 75A rating is adequate, as it will not degrade performance. The extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C) provides additional margin.

Q: Why does the HUF75652G3 have higher gate charge than the IXFH75N10?

A: Gate charge (Qg) is measured at different gate voltage levels (20V for HUF75652G3 vs. 10V for IXFH75N10). Higher gate charge at higher measurement voltage reflects the device's capacitive characteristics. This affects gate drive circuit design but does not prevent substitution if the drive circuit is rated for the specified gate voltage.

Q: Can I use the IXFH76N15T2 in a 100V application?

A: The IXFH76N15T2 is rated for 150V drain-to-source voltage, which exceeds the 100V requirement. It will function correctly in 100V applications. The higher voltage rating provides additional safety margin but does not improve performance in 100V circuits. The 76A current rating is comparable to the original 75A specification.

Q: Are all substitute parts available in the same packaging options?

A: All substitute parts are available in through-hole TO-247 variants. Specific packaging options (tube, tray) vary by manufacturer and distributor. The TO-247-3 and TO-247AD packages are mechanically compatible for PCB assembly.

Q: What is the impact of lower on-state resistance on circuit design?

A: Lower on-state resistance (Rds On) reduces power dissipation during conduction, lowering heat generation and potentially reducing cooling requirements. This is beneficial in most applications. Gate drive circuits must still be designed for the specified gate voltage and charge requirements of the selected device.

Q: Are there current rating differences between Tc and Ta specifications?

A: The FDH3632 specifies 12A at Ta (ambient temperature) and 80A at Tc (case temperature). The Tc rating is the continuous drain current at 25°C case temperature, which is the standard specification used for comparison. The Ta rating reflects derating at higher ambient temperatures without active cooling.

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