IXFH74N20 N-Channel MOSFET 200V 74A TO-247AD Equivalent & Substitute Parts

Part Overview

The IXFH74N20 is an N-Channel MOSFET manufactured by IXYS in the HiPerFET™ series, rated for 200V drain-to-source voltage and 74A continuous drain current at 25°C. The device is packaged in a Through Hole TO-247AD configuration and is designed for high-power switching applications requiring robust thermal performance.

The IXFH74N20 is classified as Obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IXFH74N20

IXYSIn Stock: 5443IXFH74N20 Datasheet

Current PartRFQ

IXFH74N20P

IXYSIn Stock: 32753IXFH74N20P Datasheet

DirectRFQ

APT20M34BLLG

Microchip TechnologyIn Stock: 1165APT20M34BLLG Datasheet

SimilarRFQ

IRFP4227PBF

Infineon TechnologiesIn Stock: 53297IRFP4227PBF Datasheet

SimilarRFQ

STW75NF20

STMicroelectronicsIn Stock: 1453STW75NF20 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFH74N20 is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

• Drain to Source Voltage (Vdss): 200V (exact match required)
• Current - Continuous Drain (Id) @ 25°C: 74A or greater (equal or higher rating acceptable)
• Mounting Type: Through Hole (mechanical compatibility)
• Package / Case: TO-247-3 or compatible TO-247 variants (physical fit requirement)

Secondary Compatibility Factors:

• Rds On (Max) @ Id, Vgs: Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Operating Temperature Range: Must encompass or exceed application requirements
• Power Dissipation (Max): Higher ratings provide thermal margin

Substitute parts are grouped into two categories:

Direct Substitutes: Parts with identical or superior electrical ratings and compatible packaging that can replace the IXFH74N20 without circuit modification.

Similar Substitutes: Parts meeting the core voltage and current requirements with minor variations in secondary parameters, requiring design verification for specific applications.

Parameter Comparison

Engineering Selection Recommendations

IXFH74N20P (IXYS)

The IXFH74N20P is the primary direct substitute for the obsolete IXFH74N20. Both devices are manufactured by IXYS within the HiPerFET™ series and share identical voltage and current ratings. The IXFH74N20P is classified as Active with ROHS3 compliance and REACH Unaffected status. The device offers improved power dissipation (480W versus 360W) and extended operating temperature range (-55°C to 175°C versus -55°C to 150°C). Gate charge is significantly reduced (107 nC versus 280 nC), resulting in lower switching losses. This part is suitable for direct replacement in existing designs.

APT20M34BLLG (Microchip Technology)

The APT20M34BLLG is a similar substitute manufactured by Microchip Technology in the POWER MOS 7® series. It meets the core voltage (200V) and current (74A) requirements with compatible TO-247-3 packaging. The device features the lowest gate charge (60 nC) among all substitutes, providing superior switching performance. ROHS3 compliance and REACH Unaffected status are confirmed. This part is suitable for applications where reduced switching losses are beneficial.

IRFP4227PBF (Infineon Technologies)

The IRFP4227PBF is a similar substitute manufactured by Infineon Technologies in the HEXFET® series. The device is rated for 200V with 65A continuous drain current, which is lower than the IXFH74N20 (74A). The IRFP4227PBF features the lowest Rds On (25 mOhm) and moderate gate charge (98 nC). ROHS3 compliance and REACH Unaffected status are confirmed. This part is suitable for applications where the 65A rating is sufficient and lower on-resistance is advantageous.

STW75NF20 (STMicroelectronics)

The STW75NF20 is a similar substitute manufactured by STMicroelectronics in the STripFET™ series. It meets the core voltage (200V) requirement with 75A continuous drain current, slightly exceeding the IXFH74N20 rating. The device features moderate gate charge (84 nC) and Rds On (34 mOhm). ROHS3 compliance and REACH Unaffected status are confirmed. Power dissipation is lower (190W) compared to the original part. This part is suitable for applications where the slightly higher current rating and lower power dissipation are acceptable.

Frequently Asked Questions (FAQ)

Q: Can the IXFH74N20P be used as a direct replacement for the IXFH74N20?

A: Yes. The IXFH74N20P is manufactured by the same supplier (IXYS) and shares identical voltage (200V) and current (74A) ratings. Both devices use the TO-247-3 package. The IXFH74N20P is Active status with improved thermal performance and lower gate charge, making it the primary direct substitute.

Q: What are the key differences between the IXFH74N20P and APT20M34BLLG?

A: Both devices meet the 200V/74A core requirements and use TO-247-3 packaging. The APT20M34BLLG features significantly lower gate charge (60 nC versus 107 nC), reducing switching losses. The IXFH74N20P offers higher power dissipation rating (480W versus unspecified) and extended temperature range to 175°C. Manufacturer differences (IXYS versus Microchip Technology) may affect supply chain and support considerations.

Q: Why is the IRFP4227PBF rated for 65A instead of 74A?

A: The IRFP4227PBF is a similar substitute with a lower continuous drain current rating (65A). This device is suitable only for applications where the 65A rating is sufficient. The lower current rating does not make it a direct replacement for designs requiring the full 74A capability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IXFH74N20P, APT20M34BLLG, IRFP4227PBF, and STW75NF20) are confirmed ROHS3 compliant. The original IXFH74N20 does not specify RoHS status.

Q: What is the significance of gate charge differences among these parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IXFH74N20 has 280 nC, while substitutes range from 60 nC (APT20M34BLLG) to 107 nC (IXFH74N20P). Lower values improve efficiency in high-frequency switching applications.

Q: Can the STW75NF20 be used if my application requires 74A continuous current?

A: The STW75NF20 is rated for 75A continuous drain current, which exceeds the 74A requirement. However, its power dissipation rating (190W) is lower than the IXFH74N20 (360W). Thermal analysis is required to confirm suitability for your specific application, as the lower power dissipation rating may limit performance in high-power scenarios.

Q: Are there any temperature range limitations when substituting?

A: The IXFH74N20 operates from -55°C to 150°C. The IXFH74N20P extends to 175°C, providing additional margin. The IRFP4227PBF and APT20M34BLLG also reach 175°C. The STW75NF20 operates to 150°C, matching the original. Verify that substitute temperature ranges encompass your application requirements.

Q: What is the difference between TO-247AD and TO-247-3 packaging?

A: The IXFH74N20 uses TO-247AD (IXFH variant), while substitutes use standard TO-247-3 or TO-247AC packaging. These are mechanically compatible three-lead through-hole packages with identical pin configurations and mounting footprints. The variant designations reflect manufacturer-specific package specifications but do not affect physical compatibility.