IXFH72N30X3 Equivalent & Substitute Parts

Part Overview

The IXFH72N30X3 is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ Ultra X3 series. This device is rated for 300V drain-to-source voltage with a continuous drain current of 72A at 25°C and maximum power dissipation of 390W. The component is housed in a TO-247 through-hole package and is designed for high-efficiency switching applications requiring robust voltage and current handling capabilities.

The IXFH72N30X3 maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified based on matching electrical performance parameters, package compatibility, and operational specifications that permit direct circuit substitution without design modification.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	72	A
On-State Resistance (Rds On Max) @ 36A, 10V	19	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1.5mA	4.5	V
Gate Charge (Qg Max) @ 10V	82	nC
Input Capacitance (Ciss Max) @ 25V	5400	pF
Power Dissipation (Max)	390	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247	Through Hole
Gate Voltage (Max)	±20	V

Substitute Part Grouping Explanation

Substitute parts for the IXFH72N30X3 are identified based on the following electrical and mechanical criteria:

Primary Substitution Parameters:

FET Type: N-Channel MOSFET technology
Package: TO-247 through-hole configuration
Drain-to-Source Voltage (Vdss): Equal or greater rating
Continuous Drain Current (Id): Equal or greater rating
On-State Resistance (Rds On): Comparable or lower values
Gate Charge (Qg): Comparable switching characteristics
Operating Temperature Range: Minimum -55°C to +150°C coverage
Compliance: RoHS3 compliant, REACH unaffected

The IRFP4768PBF qualifies as a substitute based on matching N-Channel MOSFET topology, TO-247 package compatibility, and electrical parameters that permit functional equivalence in circuit applications. While the IRFP4768PBF operates at a lower Vdss rating (250V versus 300V), it provides superior continuous drain current (93A versus 72A) and lower on-state resistance (17.5mOhm versus 19mOhm), making it suitable for applications where voltage headroom is not the limiting design factor.

Parameter Comparison

Parameter	IXFH72N30X3	IRFP4768PBF	Unit
Manufacturer	IXYS	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Drain-to-Source Voltage (Vdss)	300	250	V
Continuous Drain Current (Id) @ 25°C	72	93	A
On-State Resistance (Rds On Max)	19 @ 36A, 10V	17.5 @ 56A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	4.5 @ 1.5mA	5 @ 250µA	V
Gate Charge (Qg Max) @ 10V	82	270	nC
Input Capacitance (Ciss Max)	5400 @ 25V	10880 @ 50V	pF
Power Dissipation (Max)	390	520	W
Operating Temperature Range	-55 to 150	-55 to 175	°C
Package Type	TO-247	TO-247AC	—
Gate Voltage (Max)	±20	±20	V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IXFH72N30X3 (Primary Component)

The IXFH72N30X3 is the specified component for applications requiring 300V drain-to-source voltage rating. This device maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity classification. The HiPerFET™ Ultra X3 series designation indicates optimized switching performance for high-frequency applications. Selection of this part is appropriate when circuit design specifies 300V voltage headroom as a critical requirement.

IRFP4768PBF (Substitute Component)

The IRFP4768PBF is suitable as a substitute in applications where the 300V voltage rating of the IXFH72N30X3 exceeds circuit requirements. This Infineon HEXFET® device operates at 250V maximum drain-to-source voltage and delivers superior continuous drain current (93A versus 72A) with lower on-state resistance (17.5mOhm versus 19mOhm). The IRFP4768PBF maintains Active product status, RoHS3 compliance, and extends the operating temperature range to 175°C. Gate charge is higher (270nC versus 82nC), which affects switching speed and gate drive requirements. This substitute is appropriate for circuits operating below 250V where current capacity and thermal performance are prioritized.

Both components are through-hole mounted in TO-247 package variants and are electrically compatible with standard gate drive circuits rated for ±20V gate voltage operation.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4768PBF directly replace the IXFH72N30X3 in all applications?

A: Direct substitution is limited to applications where the circuit operates at or below 250V drain-to-source voltage. The IRFP4768PBF is not suitable for circuits designed to operate at 300V. Verification of actual circuit voltage stress is required before substitution.

Q: What is the impact of higher gate charge in the IRFP4768PBF?

A: The IRFP4768PBF exhibits gate charge of 270nC compared to 82nC in the IXFH72N30X3. Higher gate charge increases switching transition time and gate drive power consumption. Gate driver circuits must be evaluated for compatibility with the increased charge requirement.

Q: Are the TO-247 and TO-247AC packages mechanically interchangeable?

A: Both packages are through-hole TO-247 variants with identical pin configurations and mechanical mounting interfaces. They are mechanically interchangeable in standard PCB layouts. Pin assignment and lead spacing conform to industry standards for this package family.

Q: What are the compliance implications of substitution?

A: Both the IXFH72N30X3 and IRFP4768PBF maintain RoHS3 compliance and REACH unaffected status. Substitution does not introduce compliance risk. Both components carry unlimited moisture sensitivity classification (MSL 1).

Q: How does the lower on-state resistance of the IRFP4768PBF affect thermal performance?

A: The IRFP4768PBF exhibits lower on-state resistance (17.5mOhm versus 19mOhm), which reduces conduction losses and heat generation at equivalent current levels. Maximum power dissipation rating is higher (520W versus 390W), indicating improved thermal capability. This substitution generally improves thermal performance in current-limited applications.

Q: What is the significance of the extended temperature range in the IRFP4768PBF?

A: The IRFP4768PBF operates to 175°C junction temperature compared to 150°C for the IXFH72N30X3. This extended range provides additional thermal margin in high-temperature environments but does not affect substitution suitability in standard temperature applications.

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