IXFH6N90 Equivalent & Substitute Parts

Part Overview

The IXFH6N90 is an N-Channel MOSFET rated for 900V drain-to-source voltage with 6A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247AD package and is part of the HiPerFET™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	6	A
On-State Resistance (Rds On) @ 3A, 10V	2	Ohm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA	4.5	V
Gate Charge (Qg) @ 10V	130	nC
Input Capacitance (Ciss) @ 25V	2600	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247AD	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH6N90 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 900V (exact match required)
Package Type: TO-247 family (TO-247AD, TO-247AC, TO-247-3 are mechanically compatible)
Mounting Type: Through Hole
Operating Temperature Range: -55°C to 150°C (minimum requirement)
FET Type: N-Channel MOSFET

Allowable Variation Parameters:

Continuous Drain Current (Id): Equal to or greater than 6A
On-State Resistance (Rds On): Equal to or less than 2Ohm (lower resistance is acceptable)
Gate Charge (Qg): Equal to or less than 130nC (lower gate charge is acceptable)
Input Capacitance (Ciss): Equal to or less than 2600pF (lower capacitance is acceptable)
Power Dissipation: Equal to or greater than 300W (higher dissipation capability is acceptable)

All identified substitute parts meet or exceed the IXFH6N90 specifications within these parameters and are compatible with applications designed for the original component.

Parameter Comparison

Parameter	IXFH6N90	IRFPF50 / IRFPF50PBF	STW7NK90Z	STW9NK90Z	STW11NK90Z
Manufacturer	IXYS	Vishay Siliconix	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	900	900	900	900	900
Id @ 25°C (A)	6	6.7	5.8	8	9.2
Rds On @ 10V (Ohm)	2 @ 3A	1.6 @ 4A	2 @ 2.9A	1.3 @ 3.6A	0.98 @ 4.6A
Vgs(th) (V)	4.5 @ 2.5mA	4 @ 250µA	4.5 @ 100µA	4.5 @ 100µA	4.5 @ 100µA
Qg @ 10V (nC)	130	200	60.5	72	115
Ciss @ 25V (pF)	2600	2900	1350	2115	3000
Power Dissipation (W)	300	190	140	160	200
Package	TO-247AD	TO-247AC	TO-247-3	TO-247-3	TO-247-3
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Product Status	Obsolete	Active	Active	Active	Active

Engineering Selection Recommendations

IRFPF50PBF (Vishay Siliconix)

The IRFPF50PBF is the preferred substitute for new designs and production applications. This part is active in production status with ROHS3 compliance and REACH unaffected certification. The device provides 6.7A continuous drain current, exceeding the IXFH6N90 specification of 6A. On-state resistance is reduced to 1.6Ohm at 4A, improving efficiency. Gate charge is elevated to 200nC, which may require driver circuit evaluation in high-frequency switching applications. The TO-247AC package is mechanically compatible with TO-247AD footprints. Inventory availability is 2172 units.

STW9NK90Z (STMicroelectronics)

The STW9NK90Z is an active production alternative offering 8A continuous drain current with reduced on-state resistance of 1.3Ohm at 3.6A. This device features the SuperMESH™ technology and provides improved switching characteristics with gate charge of 72nC. ROHS3 compliance and REACH unaffected status are confirmed. The TO-247-3 package is mechanically compatible. Inventory availability is 19260 units, providing strong supply continuity. This part is suitable for applications requiring enhanced current handling and reduced conduction losses.

STW11NK90Z (STMicroelectronics)

The STW11NK90Z delivers the highest current rating at 9.2A with the lowest on-state resistance of 0.98Ohm at 4.6A. This device is recommended for applications requiring maximum current capacity and minimal conduction losses. SuperMESH™ technology and ROHS3 compliance are confirmed. Gate charge is 115nC, providing efficient switching. Input capacitance is elevated to 3000pF. The TO-247-3 package is mechanically compatible. Inventory availability is 1771 units.

STW7NK90Z (STMicroelectronics)

The STW7NK90Z provides the closest current rating match at 5.8A, with on-state resistance of 2Ohm at 2.9A. This device features the lowest gate charge at 60.5nC and lowest input capacitance at 1350pF, making it suitable for high-frequency switching applications with minimal driver requirements. ROHS3 compliance and REACH unaffected status are confirmed. The TO-247-3 package is mechanically compatible. Inventory availability is 2086 units.

IRFPF50 (Vishay Siliconix)

The IRFPF50 is an active production alternative with specifications identical to IRFPF50PBF. RoHS non-compliance status requires verification for applications with regulatory requirements. Inventory availability is 1250 units.

Frequently Asked Questions (FAQ)

Q: Can the IXFH6N90 be directly replaced with any of these substitute parts?

A: All identified substitute parts are mechanically and electrically compatible with the IXFH6N90 within the TO-247 package family. Direct pin-for-pin replacement is possible. However, circuit performance characteristics will vary due to differences in on-state resistance, gate charge, and input capacitance. Driver circuits and thermal management designs should be evaluated for each substitute.

Q: What is the difference between TO-247AD, TO-247AC, and TO-247-3 packages?

A: All three variants are mechanically compatible through-hole packages with identical pin configurations and footprints. The designations reflect minor manufacturing variations by different suppliers. Thermal and electrical performance are equivalent for PCB mounting applications.

Q: Why does the IRFPF50PBF have higher gate charge than the IXFH6N90?

A: Gate charge of 200nC versus 130nC reflects design trade-offs in the IRFPF50PBF. The higher gate charge is offset by improved on-state resistance (1.6Ohm versus 2Ohm) and higher current rating (6.7A versus 6A). Gate driver circuits must supply sufficient current to charge the gate within the required switching time. Evaluation of driver capability is recommended for high-frequency applications above 100kHz.

Q: Which substitute part has the lowest on-state resistance?

A: The STW11NK90Z provides the lowest on-state resistance at 0.98Ohm at 4.6A, compared to the IXFH6N90 at 2Ohm at 3A. Lower on-state resistance reduces conduction losses and heat dissipation, improving overall circuit efficiency. This part is recommended for high-current applications where thermal management is critical.

Q: Are all substitute parts RoHS compliant?

A: IRFPF50PBF, STW7NK90Z, STW9NK90Z, and STW11NK90Z are ROHS3 compliant. IRFPF50 is RoHS non-compliant. For applications requiring RoHS compliance, IRFPF50PBF or any STMicroelectronics part (STW series) must be selected.

Q: What is the significance of the SuperMESH™ technology in STW series parts?

A: SuperMESH™ is a STMicroelectronics technology platform that optimizes the trade-off between on-state resistance and switching characteristics. STW series parts (STW7NK90Z, STW9NK90Z, STW11NK90Z) incorporate this technology, resulting in lower gate charge and improved switching performance compared to conventional MOSFET designs. This enables higher switching frequencies with reduced driver stress.

Q: Which substitute part is best for high-frequency switching applications?

A: The STW7NK90Z is optimal for high-frequency applications, featuring the lowest gate charge at 60.5nC and lowest input capacitance at 1350pF. These characteristics minimize driver circuit stress and switching losses at frequencies above 100kHz. The STW9NK90Z and STW11NK90Z also provide excellent high-frequency performance with gate charges of 72nC and 115nC respectively.

Q: Can the IXFH6N90 be used in new designs, or must a substitute be selected?

A: The IXFH6N90 is classified as obsolete and is not recommended for new designs. Long-term supply availability cannot be assured. One of the active production substitute parts must be selected for new designs to ensure component availability throughout the product lifecycle.

Q: What inventory levels are available for each substitute part?

A: STW9NK90Z: 19260 units; IRFPF50PBF: 2172 units; STW7NK90Z: 2086 units; STW11NK90Z: 1771 units; IRFPF50: 1250 units. STW9NK90Z provides the highest inventory availability for immediate procurement.

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