IXFH6N100F N-Channel 1000V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH6N100F is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 6A continuous drain current at 25°C. This device operates in the HiPerFET™ F Class series and is housed in a TO-247 through-hole package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges for high-voltage switching applications.

Substiute Parts

IXFH6N100F

IXYSIn Stock: 1274IXFH6N100F Datasheet

Current PartRFQ

STW7N105K5

STMicroelectronicsIn Stock: 1471STW7N105K5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFH6N100F is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain a drain-to-source voltage (Vdss) rating equal to or greater than 1000V to ensure safe operation in the same circuit topology.

Current Handling: The continuous drain current (Id) rating must support the application's maximum current demand. The IXFH6N100F is rated at 6A; substitute parts with lower current ratings require circuit redesign verification.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Substitute parts with higher Rds On values increase heat generation and may require thermal management adjustments.

Gate Charge (Qg): Lower gate charge values reduce switching losses and driver power requirements. Higher values increase switching frequency losses.

Package Compatibility: Both the main part and substitute must use TO-247-3 through-hole packaging to ensure mechanical fit and thermal interface compatibility.

Compliance and Status: All substitute parts must maintain Active product status and RoHS3 compliance for regulatory and supply chain continuity.

Parameter Comparison

Engineering Selection Recommendations

STW7N105K5 as Substitute for IXFH6N100F:

The STW7N105K5 from STMicroelectronics is listed as the manufacturer-recommended substitute. Both devices maintain Active product status and full RoHS3 compliance, ensuring regulatory continuity and supply chain reliability.

Voltage Rating: The STW7N105K5 provides 1050V Vdss, which exceeds the 1000V requirement of the IXFH6N100F, ensuring adequate voltage margin in high-voltage switching applications.

Current Derating: The STW7N105K5 is rated at 4A continuous drain current, compared to 6A for the main part. Applications requiring the full 6A rating cannot use this substitute without circuit modification.

Thermal Performance: The STW7N105K5 has a maximum power dissipation of 110W versus 180W for the IXFH6N100F. This lower thermal capacity requires evaluation of application duty cycles and thermal management requirements.

Switching Characteristics: The STW7N105K5 exhibits significantly lower gate charge (17 nC versus 54 nC), resulting in reduced switching losses and lower driver power consumption. Input capacitance is also substantially lower (380 pF versus 1770 pF), improving high-frequency switching performance.

Gate Voltage Tolerance: The STW7N105K5 accepts ±30V gate voltage compared to ±20V for the main part, providing greater gate drive flexibility.

Package Compatibility: Both devices use TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the STW7N105K5 directly replace the IXFH6N100F in all applications?

A: Direct replacement is possible only in applications where the continuous drain current requirement does not exceed 4A. The STW7N105K5 is rated at 4A versus the IXFH6N100F's 6A rating. Applications requiring higher current must retain the original part or redesign the circuit topology.

Q: What is the impact of the lower gate charge in the STW7N105K5?

A: Lower gate charge (17 nC versus 54 nC) reduces switching losses and driver power consumption. This improves efficiency in high-frequency switching applications and reduces thermal stress on the gate driver circuit.

Q: How does the reduced power dissipation rating of the STW7N105K5 affect thermal design?

A: The STW7N105K5 has a maximum power dissipation of 110W compared to 180W for the IXFH6N100F. Thermal management must account for this lower rating. Applications with high duty cycles or continuous operation may require additional heatsinking or circuit derating.

Q: Are both parts mechanically compatible in TO-247-3 packages?

A: Yes. Both the IXFH6N100F and STW7N105K5 use TO-247-3 through-hole packaging. No PCB modifications are required for mechanical fit or thermal interface mounting.

Q: What is the significance of the higher gate voltage rating (±30V) in the STW7N105K5?

A: The STW7N105K5 accepts ±30V gate voltage versus ±20V for the IXFH6N100F. This provides greater tolerance for gate drive circuits and allows use with higher-voltage gate driver outputs without modification.

Q: Do both parts meet the same regulatory compliance standards?

A: Yes. Both the IXFH6N100F and STW7N105K5 are RoHS3 compliant with MSL 1 (unlimited moisture sensitivity). Both maintain Active product status, ensuring long-term supply availability and regulatory continuity.

Q: What is the difference in on-state resistance between the two parts?

A: The IXFH6N100F has Rds On of 1.9 Ohm at 3A, 10V, while the STW7N105K5 has 2.0 Ohm at 2A, 10V. The difference is minimal; however, the STW7N105K5 measurement is taken at lower current, making direct comparison context-dependent.