IXFH6N100 Equivalent & Substitute Parts

Part Overview

The IXFH6N100 is an N-Channel 1000V 6A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is rated for 180W power dissipation and operates across a temperature range of -55°C to 150°C. The part is designated as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within the 1000V N-Channel MOSFET category.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	6	A
On-State Resistance (Rds On Max) @ 10V	2	Ohm
Gate Threshold Voltage (Vgs(th) Max)	4.5	V
Gate Charge (Qg Max) @ 10V	130	nC
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXFH6N100 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain to Source Voltage (Vdss): 1000V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum

Performance Flexibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 6A
On-State Resistance (Rds On): Equal to or lower than 2Ohm (lower values indicate improved performance)
Power Dissipation: Equal to or greater than 180W
Gate Charge (Qg): Lower values reduce switching losses

The substitute parts listed below meet all mandatory criteria and offer varying performance characteristics within the allowed electrical and mechanical parameters for this product category.

Parameter Comparison

Parameter	IXFH6N100	IXFH7N100P	IRFPG30PBF	STW11NK100Z
Manufacturer	IXYS	IXYS	Vishay Siliconix	STMicroelectronics
Drain to Source Voltage (Vdss)	1000V	1000V	1000V	1000V
Continuous Drain Current (Id) @ 25°C	6A	7A	3.1A	8.3A
Rds On (Max) @ 10V	2Ohm	1.9Ohm	5Ohm	1.38Ohm
Gate Threshold Voltage (Vgs(th) Max)	4.5V	6V	4V	4.5V
Gate Charge (Qg Max) @ 10V	130nC	47nC	80nC	162nC
Power Dissipation (Max)	180W	300W	125W	230W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package Type	TO-247AD	TO-247	TO-247AC	TO-247-3
Product Status	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH7N100P (IXYS)

The IXFH7N100P is an active product within the same HiPerFET™ series as the IXFH6N100. It provides superior performance with 7A continuous drain current, lower on-state resistance (1.9Ohm), and significantly higher power dissipation (300W). The gate charge is substantially reduced (47nC versus 130nC), resulting in lower switching losses. This part is suitable for direct replacement in applications where improved thermal performance and efficiency are beneficial. ROHS3 compliance and active product status support long-term availability.

STW11NK100Z (STMicroelectronics)

The STW11NK100Z is an active SuperMESH™ technology device offering the highest continuous drain current (8.3A) and lowest on-state resistance (1.38Ohm) among the substitutes. Power dissipation reaches 230W, exceeding the original part's 180W rating. This part is appropriate for applications requiring maximum current handling and minimal conduction losses. The higher gate charge (162nC) results in increased switching losses compared to the IXFH6N100. ROHS3 compliance and active status ensure supply continuity.

IRFPG30PBF (Vishay Siliconix)

The IRFPG30PBF is an active product with reduced continuous drain current (3.1A) and higher on-state resistance (5Ohm) relative to the IXFH6N100. Power dissipation is limited to 125W. This part is suitable only for applications where the original 6A current requirement can be reduced or where lower power dissipation is acceptable. The lower gate charge (80nC) provides switching loss advantages. ROHS3 compliance and active status are confirmed.

Frequently Asked Questions (FAQ)

Q: Can the IXFH7N100P directly replace the IXFH6N100 in existing designs?

A: The IXFH7N100P meets all mandatory compatibility criteria: 1000V Vdss, N-Channel MOSFET technology, TO-247 through-hole package, and -55°C to 150°C operating range. The higher current rating (7A), lower on-state resistance (1.9Ohm), and increased power dissipation (300W) represent performance improvements. Pin compatibility within the TO-247 family supports direct substitution. Thermal design verification is recommended due to the higher power dissipation capability.

Q: Why is the IRFPG30PBF listed as a substitute if it has lower current rating?

A: The IRFPG30PBF meets the mandatory voltage, technology, package, and temperature criteria. However, its 3.1A continuous drain current is below the IXFH6N100's 6A specification. This part is suitable only for applications where the circuit design permits reduced current handling or where the load current is inherently lower than 6A. It is not a direct replacement for designs requiring the full 6A capability.

Q: What is the significance of on-state resistance (Rds On) differences among these parts?

A: On-state resistance directly affects conduction losses and heat generation. The IXFH6N100 specifies 2Ohm maximum. The IXFH7N100P (1.9Ohm) and STW11NK100Z (1.38Ohm) offer lower losses, improving efficiency. The IRFPG30PBF (5Ohm) results in higher conduction losses. Selection depends on thermal budget and efficiency requirements of the application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFH6N100, IXFH7N100P, IRFPG30PBF, and STW11NK100Z are all ROHS3 compliant. All parts are REACH unaffected and classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the difference between TO-247AD, TO-247, and TO-247AC packages?

A: All three are TO-247-3 through-hole packages with identical pin configurations and mechanical footprints. The designations (AD, standard, AC) represent minor variations in lead geometry or manufacturing specifications from different manufacturers. These parts are mechanically and electrically interchangeable on standard TO-247-3 PCB layouts.

Q: Why is the IXFH6N100 marked "Not For New Designs"?

A: This designation indicates the part has been superseded in the manufacturer's product portfolio. While existing inventory remains available (1210 pieces), IXYS recommends using active alternatives for new designs. The IXFH7N100P, as an active product in the same series, is the preferred path forward for new applications.

Q: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IXFH7N100P (47nC) has significantly lower gate charge than the IXFH6N100 (130nC), resulting in improved efficiency in high-frequency switching applications. The STW11NK100Z (162nC) has higher gate charge, requiring more drive energy.

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